Low-Voltage Tunnel Transistors for Beyond CMOS Logic von Seabaugh, Alan C., Zhang, Qin

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Tunnel Field-Effect Transistors: State-of-the-Art von Hao Lu, Seabaugh, Alan

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Switching Dynamics of Ferroelectric Zr-Doped HfO2 von Alessandri, Cristobal, Pandey, Pratyush, Abusleme, Angel, Seabaugh, Alan

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Electronics based on two-dimensional materials von Fiori, Gianluca, Bonaccorso, Francesco, Iannaccone, Giuseppe, Palacios, Tomás, Neumaier, Daniel, Seabaugh, Alan, Banerjee, Sanjay K., Colombo, Luigi

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Monte Carlo Simulation of Switching Dynamics in Polycrystalline Ferroelectric Capacitors von Alessandri, Cristobal, Pandey, Pratyush, Abusleme, Angel, Seabaugh, Alan

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Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte von Xu, Huilong, Fathipour, Sara, Kinder, Erich W, Seabaugh, Alan C, Fullerton-Shirey, Susan K

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Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide von Li, Hua-Min, Lee, Daeyeong, Qu, Deshun, Liu, Xiaochi, Ryu, Jungjin, Seabaugh, Alan, Yoo, Won Jong

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Electrical Properties of 6 nm to 19 nm Thick Polyethylene Oxide Capacitors for Ion/Electron Functional Devices von Gonzalez-Serrano, Karla Adriana, Seabaugh, Alan C.

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Device and Architecture Outlook for Beyond CMOS Switches von Bernstein, Kerry, Cavin, Ralph K., Porod, Wolfgang, Seabaugh, Alan, Welser, Jeff

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Quantitative, experimentally-validated, model of MoS2 nanoribbon Schottky field-effect transistors from subthreshold to saturation von Paletti, Paolo, Fathipour, Sara, Remškar, Maja, Seabaugh, Alan

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Pulse Dynamics of Electric Double Layer Formation on All-Solid-State Graphene Field-Effect Transistors von Xu, Ke, Islam, Md Mahbubul, Guzman, David, Seabaugh, Alan C, Strachan, Alejandro, Fullerton-Shirey, Susan K

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Programming-Pulse Dependence of Ferroelectric Partial Polarization: Insights From a Comparative Study of PZT and HZO Capacitors von Pandey, Pratyush, Hwang, Wan Sik, Udayakumar, K. R., Moise, Ted S., Seabaugh, Alan C.

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Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy von Yan, Rusen, Zhang, Qin, Li, Wei, Calizo, Irene, Shen, Tian, Richter, Curt A., Hight-Walker, Angela R., Liang, Xuelei, Seabaugh, Alan, Jena, Debdeep, Grace Xing, Huili, Gundlach, David J., Nguyen, N. V.

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Monolayer Solid-State Electrolyte for Electric Double Layer Gating of Graphene Field-Effect Transistors von Xu, Ke, Lu, Hao, Kinder, Erich W, Seabaugh, Alan, Fullerton-Shirey, Susan K

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Influence of Fe2O3 Nanofiller Shape on the Conductivity and Thermal Properties of Solid Polymer Electrolytes: Nanorods versus Nanospheres von Do, Nhu Suong T, Schaetzl, Dean M, Dey, Barnali, Seabaugh, Alan C, Fullerton-Shirey, Susan K

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Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine von Park, Jun Hong, Fathipour, Sara, Kwak, Iljo, Sardashti, Kasra, Ahles, Christopher F, Wolf, Steven F, Edmonds, Mary, Vishwanath, Suresh, Xing, Huili Grace, Fullerton-Shirey, Susan K, Seabaugh, Alan, Kummel, Andrew C

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Direct Measurement of Dirac Point Energy at the Graphene/Oxide Interface von Xu, Kun, Zeng, Caifu, Zhang, Qin, Yan, Rusen, Ye, Peide, Wang, Kang, Seabaugh, Alan C, Xing, Huili Grace, Suehle, John S, Richter, Curt A, Gundlach, David J, Nguyen, N. V

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Electric Double Layer Dynamics in Poly(ethylene oxide) LiClO4 on Graphene Transistors von Li, Hua-Min, Xu, Ke, Bourdon, Buchanan, Lu, Hao, Lin, Yu-Chuan, Robinson, Joshua A, Seabaugh, Alan C, Fullerton-Shirey, Susan K

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Electric-double-layer p–i–n junctions in WSe2 von Fathipour, Sara, Paletti, Paolo, Fullerton-Shirey, Susan K., Seabaugh, Alan C.

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The MoS2 Nanotubes with Defect-Controlled Electric Properties von Remskar, Maja, Mrzel, Ales, Virsek, Marko, Godec, Matjaz, Krause, Matthias, Kolitsch, Andreas, Singh, Amol, Seabaugh, Alan

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