A unique photoemission method to measure semiconductor heterojunction band offsets von Zhang, Q., Li, R., Yan, R., Kosel, T., Xing, H. G., Seabaugh, A. C., Xu, K., Kirillov, O. A., Gundlach, D. J., Richter, C. A., Nguyen, N. V.

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Resolution enhancement of transmission electron microscopy by super-resolution radial fluctuations von Zhang, Y., Rouvimov, S., Yuan, X., Gonzalez-Serrano, K., Seabaugh, A. C., Howard, S. S.

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Batch-Fabricated WSe₂-on-Sapphire Field-Effect Transistors Grown by Chemical Vapor Deposition von Asghari Heidarlou, M., Paletti, P., Jariwala, B., Robinson, J. A., Fullerton-Shirey, S. K., Seabaugh, A. C.

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Direct extraction of the electron tunneling effective mass in ultrathin SiO2 von Brar, B., Wilk, G. D., Seabaugh, A. C.

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RTD/HFET low standby power SRAM gain cell von van der Wagt, J.P.A., Seabaugh, A.C., Beam, E.A.

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Epitaxial Si-based tunnel diodes von Thompson, P.E, Hobart, K.D, Twigg, M.E, Rommel, S.L, Jin, N, Berger, P.R, Lake, R, Seabaugh, A.C, Chi, P.H, Simons, D.S

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A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter von Broekaert, T.P.E., Brar, B., van der Wagt, J.P.A., Seabaugh, A.C., Morris, F.J., Moise, T.S., Beam, E.A., Frazier, G.A.

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Realization of a three-terminal resonant tunneling device: the bipolar quantum resonant tunneling transistor von REED, M. A, FRENSLEY, W. R, MATYI, R. J, RANDALL, J. N, SEABAUGH, A. C

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Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing von Dashiell, M.W., Troeger, R.T., Rommel, S.L., Adam, T.N., Berger, P.R., Guedj, C., Kolodzey, J., Seabaugh, A.C., Lake, R.

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The use of tertiarybutylphosphine and tertiarybutylarsine for the metalorganic molecular beam epitaxy of the In0.53Ga0.47As/InP and In0.48Ga0.52P/GaAs materials systems von BEAM, E. A, HENDERSON, T. S, SEABAUGH, A. C, YANG, J. Y

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Observation of resonant tunneling at room temperature in GaInP/GaAs/GaInP double-heterojunction bipolar transistor von Liu, W., Seabaugh, A.C., Henderson, T.S., Yuksel, A., Beam, E.A., Fan, S.

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Nine-state resonant tunneling diode memory von Seabaugh, A.C., Kao, Y.-C., Yuan, H.-T.

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Resonant transmission in the base/collector junction of a bipolar quantum-well resonant-tunneling transistor von Seabaugh, A. C., Kao, Y.-C., Frensley, W. R., Randall, J. N., Reed, M. A.

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Room-temperature operation of a resonant-tunneling hot-electron transistor based integrated circuit von Moise, T.S., Seabaugh, A.C., Beam, E.A., Randall, J.N.

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Integration of resonant-tunneling transistors and hot-electron transistors von Moise, T.S., Yung-Chung Kao, Seabaugh, A.C., Taddiken, A.H.

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Room-temperature operation of a tunneling hot-electron transfer amplifier von Moise, T. S., Kao, Y.-C., Seabaugh, A. C.

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Nanoprobe-induced electrostatic lateral quantization in near-surface resonant-tunneling heterostructures von Taylor, M. D., Wetsel, G. C., McBride, S. E., Brown, R. C., Frensley, W. R., Seabaugh, A. C., Kao, Y.-C., Beam, E. A.

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The use of organometallic group-V sources for the metalorganic molecular beam epitaxy growth of In0.48Ga0.52P/GaAs and In0.53Ga0.47As/InP heterojunction bipolar device structures von BEAM, E. A, CHAU, H. F, HENDERSON, T. S, LIU, W, SEABAUGH, A. C

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Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities von Rommel, S.L., Dillon, T.E., Berger, P.R., Thompson, P.E., Hobart, K.D., Lake, R., Seabaugh, A.C.

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Low temperature plasma-enhanced epitaxy of GaAs von PANDE, K. P, SEABAUGH, A. C

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