Concept of the InGaAs Plasmonic Waveguide for Quantum Cascade Laser Applications von Lozinska, Adriana, Badura, Mikolaj, Sciana, Beata

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GaInNas/GaAs QW Based Structures to Compensate Parasitic Effect of Quantum-Confined Stark Effect in Photodetector Applications von Bielak, Katarzyna, Pucicki, Damian, Dawidowski, Wojciech, Badura, Mikolaj, Sciana, Beata, Tlaczala, Marek

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Diffraction Properties and Application of 3D Polymer Woodpile Photonic Crystal Structure von Urbancova, Petra, Pudis, Dusan, Goraus, Matej, Suslik, Lubos, Sciana, Beata, Dawidowski, Wojciech, Kovac jr, Jaroslav, Skriniarova, Jaroslava

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Tunnel junction limited performance of InGaAsN/GaAs tandem solar cell von Dawidowski, Wojciech, Ściana, Beata, Zborowska-Lindert, Iwona, Mikolášek, Miroslav, Kováč, Jaroslav, Tłaczała, Marek

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Composition Related Electrical Active Defect States of InGaAs and GaAsN von Kosa, Arpad, Stuchlikova, Lubica, Harmatha, Ladislav, Kovac, Jaroslav, Sciana, Beata, Dawidowski, Wojciech, Tlaczala, Marek

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Enhancement of quantum cascade laser intersubband transitions via coupling to resonant discrete photonic modes of subwavelength gratings von Mikulicz, Monika, Rygała, Michał, Smołka, Tristan, Janczak, Mikołaj, Badura, Mikołaj, Łozińska, Adriana, Wolf, Adriana, Emmerling, Monika, Ściana, Beata, Höfling, Sven, Czyszanowski, Tomasz, Sęk, Grzegorz, Motyka, Marcin

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Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell von Dawidowski, Wojciech, Ściana, Beata, Bielak, Katarzyna, Mikolášek, Miroslav, Drobný, Jakub, Serafińczuk, Jarosław, Lombardero, Iván, Radziewicz, Damian, Kijaszek, Wojciech, Kósa, Arpád, Florovič, Martin, Kováč, Jaroslav, Algora, Carlos, Stuchlíková, L’ubica

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Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE von Ściana, Beata, Dawidowski, Wojciech, Radziewicz, Damian, Jadczak, Joanna, López-Escalante, Mari Cruz, González de la Cruz, Victor, Gabás, Mercedes

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Photoluminescence and Raman spectroscopies as an optical approach of stress determining in MOVPE grown quantum cascade laser structures von Łozińska, Adriana, Badura, Mikołaj, Jadczak, Joanna, Bielak, Katarzyna, Ściana, Beata

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Influence of GaInNAs/GaAs QWs composition profile on the transitions selection rules von Pucicki, Damian, Bielak, Katarzyna, Badura, Mikołaj, Dawidowski, Wojciech, Ściana, Beata

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A cross‐sectional scanning capacitance microscopy characterization of GaAs based solar cell structures von Szyszka, Adam, Dawidowski, Wojciech, Stafiniak, Andrzej, Prażmowska, Joanna, Ściana, Beata, Tłaczała, Marek

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The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE von Łozińska, Adriana, Badura, Mikołaj, Bielak, Katarzyna, Ściana, Beata, Tłaczała, Marek

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Reliability improvement of electrically active defect investigations by analytical and experimental deep level transient: Fourier spectroscopy investigations von Kosa, Arpad, Sciana, Beata, Stuchlikova, Lubica

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The influence of top electrode of InGaAsN/GaAs solar cell on their electrical parameters extracted from illuminated I–V characteristics von Dawidowski, Wojciech, Ściana, Beata, Zborowska-Lindert, Iwona, Mikolášek, Miroslav, Bielak, Katarzyna, Badura, Mikołaj, Pucicki, Damian, Radziewicz, Damian, Kováč, Jaroslav, Tłaczała, Marek

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Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy von Stuchlikova, Lubica, Sciana, Beata, Kosa, Arpad, Matus, Matej, Benko, Peter, Marek, Juraj, Donoval, Martin, Dawidowski, Wojciech, Radziewicz, Damian, Weis, Martin

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Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE von Gelczuk, Łukasz, Dąbrowska-Szata, Maria, Ściana, Beata, Pucicki, Damian, Radziewicz, Damian, Kopalko, Krzysztof, Tłaczała, Marek

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Heat Dissipation Schemes in AlInAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance von Pierścińska, Dorota, Pierściński, Kamil, Gutowski, Piotr, Badura, Mikołaj, Sobczak, Grzegorz, Serebrennikova, Olga, Ściana, Beata, Tłaczała, Marek, Bugajski, Maciej

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Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates von Kosior, Łukasz, Radziewicz, Damian, Zborowska-Lindert, Iwona, Stafiniak, Andrzej, Badura, Mikołaj, Ściana, Beata

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DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions von Kosa, Arpad, Stuchlikova, Lubica, Harmatha, Ladislav, Kovac, Jaroslav, Sciana, Beata, Dawidowski, Wojciech, Tlaczala, Marek

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Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications von Kósa, Arpád, Mikolášek, Miroslav, Stuchlíková, Ľubica, Harmatha, Ladislav, Dawidowski, Wojciech, Ściana, Beata, Tłaczała, Marek

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