Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions von Rotter, T., Mistele, D., Stemmer, J., Fedler, F., Aderhold, J., Graul, J., Schwegler, V., Kirchner, C., Kamp, M., Heuken, M.

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First AlGaN/GaN MOSFET with photoanodic gate dielectric von Mistele, D, Rotter, T, Röver, K.S, Paprotta, S, Seyboth, M, Schwegler, V, Fedler, F, Klausing, H, Semchinova, O.K, Stemmer, J, Aderhold, J, Graul, J

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Dry etching of GaN substrates for high-quality homoepitaxy von Schauler, M., Eberhard, F., Kirchner, C., Schwegler, V., Pelzmann, A., Kamp, M., Ebeling, K. J., Bertram, F., Riemann, T., Christen, J., Prystawko, P., Leszczynski, M., Grzegory, I., Porowski, S.

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High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layers von Kornitzer, K, Grehl, M, Thonke, K, Sauer, R, Kirchner, C, Schwegler, V, Kamp, M, Leszczynski, M, Grzegory, I, Porowski, S

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Multiple-step annealing for 50% enhanced p-conductivity of GaN von Chung, H.Y.A., Pelzmann, A., Drechsler, M., Scherer, M, Schwegler, V., Seyboth, M., Kirchner, C., Kamp, M.

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First ALGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide von Rotter, T, Mistele, D, Stemmer, J, Seyboth, M, Schwegler, V, Paprotta, S, Fedler, F, Klausing, H, Semchinova, O K, Aderhold, J, Graul, J

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Characterization of etched facets for GaN-based lasers von Scherer, M., Schwegler, V., Seyboth, M., Eberhard, F., Kirchner, C., Kamp, M., Ulu, G., Ünlü, M.S., Gruhler, R., Hollricher, O.

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Substrates for wide bandgap nitrides von SEYBOTH, M, SCHAD, S.-S, SCHERER, M, HABEL, F, EICHLER, C, KAMP, M, SCHWEGLER, V

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Extraction Efficiency of GaN-Based LEDs von Schad, S.S., Scherer, M., Seyboth, M., Schwegler, V.

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GaN-based lasers on SiC: influence of mirror reflectivity on L–I characteristics von Schwegler, V., Schad, S.S., Scherer, M., Kamp, M., Ulu, G., Emsley, M., Ünlü, M.S., Lell, A., Bader, S., Hahn, B., Lugauer, H.J., Kühn, F., Weimar, A., Härle, V.

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Temperature dependence of the E2 and A1(LO) phonons in GaN and AlN von Link, A., Bitzer, K., Limmer, W., Sauer, R., Kirchner, C., Schwegler, V., Kamp, M., Ebling, D. G., Benz, K. W.

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Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films von Kornitzer, K., Ebner, T., Thonke, K., Sauer, R., Kirchner, C., Schwegler, V., Kamp, M., Leszczynski, M., Grzegory, I., Porowski, S.

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MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices von Kirchner, C., Schwegler, V., Eberhard, F., Kamp, M., Ebeling, K.J., Prystawko, P., Leszczynski, M., Grzegory, I., Porowski, S.

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Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology von Kirchner, C., Schwegler, V., Eberhard, F., Kamp, M., Ebeling, K. J., Kornitzer, K., Ebner, T., Thonke, K., Sauer, R., Prystawko, P., Leszczynski, M., Grzegory, I., Porowski, S.

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High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers von Kornitzer, K., Ebner, T., Grehl, M., Thonke, K., Sauer, R., Kirchner, C., Schwegler, V., Kamp, M., Leszczynski, M., Grzegory, I., Porowski, S.

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Low resistive p -type GaN using two-step rapid thermal annealing processes von Scherer, M., Schwegler, V., Seyboth, M., Kirchner, C., Kamp, M., Pelzmann, A., Drechsler, M.

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Ohmic Heating of InGaN LEDs during Operation: Determination of the Junction Temperature and Its Influence on Device Performance von Schwegler, V., Schad, S. S., Kirchner, C., Seyboth, M., Kamp, M., Ebeling, K. J., Kudryashov, V. E., Turkin, A. N., Yunovich, A. E., Stempfle, U., Link, A., Limmer, W., Sauer, R.

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First AlGaN/GaN metal oxide semiconductor heterostructurefieldeffect transistor based on photoanodic oxide von Rotter, T., Mistele, D., Stemmer, J., Seyboth, M., Schwegler, V., Paprotta, S., Fedler, F., Klausing, H., Semchinova, O.K., Aderhold, J., Graul, J.

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First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide von Rotter, T, Mistele, D, Stemmer, J, Seyboth, M, Schwegler, V, Paprotta, S, Fedler, F, Klausing, H, Semchinova, O K, Aderhold, J, Graul, J

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Spatially Resolved Imaging of the Spectral Emission Characteristic of an InGaN/GaN-Multi Quantum Well- Light-Emitting Diode by Scanning Electroluminescence Microscopy von Fischer, Peter, Christen, Jürgen, Zacharias, Margit, Schwegler, Veit, Kirchner, Christoph, Kamp, Markus

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