Electrical Behavior and Technology Optimization of Si/SiGeC HBTs on Thin-Film SOI von Avenier, G., Fregonese, S., Chevalier, P., Bustos, J., Saguin, F., Schwartzmann, T., Maneux, C., Zimmer, T., Chantre, A.

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Band-to-band tunneling in vertically scaled SiGe:C HBTs von Lagarde, D., Chevalier, P., Schwartzmann, T., Chantre, A.

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A selective epitaxy collector module for high-speed Si/SiGe:C HBTs von Geynet, B., Chevalier, P., Brossard, F., Vandelle, B., Schwartzmann, T., Buczko, M., Avenier, G., Dutartre, D., Dambrine, G., Danneville, F., Chantre, A.

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Patisiran Treatment in Patients with Transthyretin Cardiac Amyloidosis von Maurer, Mathew S., Kale, Parag, Fontana, Marianna, Berk, John L., Grogan, Martha, Gustafsson, Finn, Hung, Rebecca R., Gottlieb, Robert L., Damy, Thibaud, González-Duarte, Alejandra, Sarswat, Nitasha, Sekijima, Yoshiki, Tahara, Nobuhiro, Taylor, Mark S., Kubanek, Milos, Donal, Erwan, Palecek, Tomas, Tsujita, Kenichi, Tang, W.H. Wilson, Yu, Wen-Chung, Obici, Laura, Simões, Marcus, Fernandes, Fábio, Poulsen, Steen Hvitfeldt, Diemberger, Igor, Perfetto, Federico, Solomon, Scott D., Di Carli, Marcelo, Badri, Prajakta, White, Matthew T., Chen, Jihong, Yureneva, Elena, Sweetser, Marianne T., Jay, Patrick Y., Garg, Pushkal P., Vest, John, Gillmore, Julian D.

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Symmetry of molecular properties: I. Theory and applications to vibration-rotation properties of spherical top molecules von Michelot, F., Schwartzmann, T.

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Development of the WHOQOL disabilities module von Power, M. J., Green, A. M.

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New basis for spin operators adapted to the study of hyperfine effects in polyatomic molecules von Schwartzmann, T., Michelot, F.

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The Attitudes to Disability Scale (ADS): development and psychometric properties von Power, M. J., Green, A. M.

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The Quality of Care and Support (QOCS) for people with disability scale: Development and psychometric properties von Lucas-Carrasco, Ramona, Eser, Erhan, Hao, Yuantao, McPherson, Kathryn M., Green, Ann, Kullmann, Lajos

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A spice model for predicting static thermal coupling between bipolar transistors von Beckrich, H., Schwartzmann, T., Celif, D., Zimmer, T.

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Lower-face and neck antiaging treatment and prevention using onabotulinumtoxin A: the 2010 multidisciplinary French consensus - part 2 von Raspaldo, Herve, Niforos, Francois-Rene, Gassia, Veronique, Dallara, Jean-Marie, Bellity, Philippe, Baspeyras, Martine, Belhaouari, Lakhdar

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Coupled Approach for Reliability Study of Fully Self Aligned SiGe: C 250GHz HBTs von Diop, M., Revil, N., Marin, M., Monsieur, F., Schwartzmann, T., Ghibaudo, G.

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Coupled Approach for Reliability Study of Fully Self Aligned SiGe:C 250GHz HBTs von Diop, M., Revil, N., Marin, M., Monsieur, F., Schwartzmann, T., Ghibaudo, G.

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A self-aligned vertical HBT for thin SOI SiGeC BiCMOS von Avenier, G., Schwartzmann, T., Chevalier, P., Vandelle, B., Rubaldo, L., Dutartre, D., Boissonnet, L., Saguin, F., Pantel, R., Fregonese, S., Maneux, C., Zimmer, T., Chantre, A.

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New Method for Oxide Capacitance Extraction von Raya, C., Schwartzmann, T., Chevalier, P., Pourchon, F., Celi, D., Zimmer, T.

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Upper- and mid-face anti-aging treatment and prevention using onabotulinumtoxin A: the 2010 multidisciplinary French consensus - part 1 von Raspaldo, Herve, Baspeyras, Martine, Bellity, Philippe, Dallara, Jean-Marie, Gassia, Veronique, Niforos, Francois-Rene, Belhaouari, Lakhdar

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Simulation of surface engineering for ultra shallow junction formation of PMOS for the 90nm CMOS technology node and beyond von Bonnouvrier, J., Lenoble, D., Robilliart, E., Schwartzmann, T., Jaouen, H.

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Prospects for Complementary SiGeC BiCMOS on Thin-Film SOI von Chantre, Alain, Avenier, Gregory, Boissonnet, Laurence, Borot, Gael, Bouillon, Pierre, Brossard, Florence, Chevalier, Pascal, Deleglise, Florence, Dutartre, Didier, Duvernay, Julien, Fregonese, Sebastien, Judong, Fabienne, Pantel, Roland, Perrotin, Andre, Rauber, Bruno, Rubaldo, Laurent, Saguin, Fabienne, Schwartzmann, Thierry, Vandelle, Benoit, Zimmer, Thomas

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An experimental and simulation study of pnp Si/SiGeC HBTs using box-like Ge profiles von Duvernay, J., Borot, G., Chevalier, P., Dutartre, D., Pantel, R., Rubaldo, L., Schwartzmann, T., Vandelle, B., Chantre, A.

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250-GHz self-aligned Si/SiGeC HBT featuring an all-implanted collector von Chevalier, P., Raya, C., Geynet, B., Pourchon, F., Judong, F., Saguin, F., Schwartzmann, T., Pantel, R., Vandelle, B., Rubaldo, L., Avenier, G., Barbalat, B., Chantre, A.

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