Device Delay in GaN Transistors Under High Drain Bias Conditions von Lee, Dong Seup, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas

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Implications of Interfacial Thermal Transport on the Self-Heating of GaN-on-SiC High Electron Mobility Transistors von Shoemaker, Daniel C., Song, Yiwen, Kang, Kyuhwe, Schuette, Michael L., Tweedie, James S., Sheppard, Scott T., McIlwaine, Nathaniel S., Maria, Jon-Paul, Choi, Sukwon

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Nanowire Channel InAlN/GaN HEMTs With High Linearity of gm and fT von DONG SEUP LEE, HAN WANG, SAUNIER, Paul, PALACIOS, Tomás, ALLEN HSU, AZIZE, Mohamed, LABOUTIN, Oleg, YU CAO, JOHNSON, Jerry Wayne, BEAM, Edward, KETTERSON, Andrew, SCHUETTE, Michael L

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Ionic Metal-Oxide TFTs for Integrated Switching Applications von Schuette, Michael L., Green, Andrew J., Leedy, Kevin, Crespo, Antonio, Tetlak, Stephen E., Sutherlin, Karynn A., Jessen, Gregg H.

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Passivation of surface and interface states in AlGaN/GaN HEMT structures by annealing von KIM, Hyeongnam, SCHUETTE, Michael L, LEE, Jaesun, WU LU, MABON, James C

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Edge-field effects on gate capacitance, threshold voltage and low-field mobility in AlGaN/GaN HEMTs von Kim, Hyeongnam, Schuette, Michael L., Lu, Wu

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Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz von Schuette, Michael L., Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J., Xing, Huili Grace, Saunier, Paul

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Compositional Study of Copper-Germanium Ohmic Contact to n-GaN von Schuette, Michael L., Lu, Wu

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Nanowire Channel InAlN/GaN HEMTs With High Linearity of g and f von Lee, Dong Seup, Wang, Han, Hsu, Allen, Azize, Mohamed, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas

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InAlN Barrier Scaled Devices for Very High f and for Low-Voltage RF Applications von Saunier, Paul, Schuette, Michael L., Tso-Min Chou, Hua-Quen Tserng, Ketterson, Andrew, Beam, Edward, Pilla, Manyam, Xiang Gao

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Cl 2 / BCl 3 / Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors von Kim, Hyeongnam, Schuette, Michael L., Lu, Wu

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Electrical transport in the copper germanide-n-GaN system: Experiment and numerical model von Schuette, Michael L., Lu, Wu

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Electrical transport in the copper germanide- n - Ga N system: Experiment and numerical model von Schuette, Michael L., Lu, Wu

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Improved Sensitivity of AlGaN/GaN Field Effect Transistor Biosensors by Optimized Surface Functionalization von Xuejin Wen, Schuette, M L, Gupta, S K, Nicholson, T R, Lee, S C, Wu Lu

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InAIN Barrier Scaled Devices for Very High fT and for Low-Voltage RF Applications : GaN ELECTRONIC DEVICES von SAUNIER, Paul, SCHUETTE, Michael L, CHOU, Tso-Min, TSERNG, Hua-Quen, KETTERSON, Andrew, BEAM, Edward, PILLA, Manyam, XIANG GAO

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Gate-Recessed Integrated E/D GaN HEMT Technology With [Formula Omitted] von Schuette, Michael L, Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J, Xing, Huili Grace, Saunier, Paul

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Gate-recessed integrated E/D GaN HEMT technology with f T /f max >300 GHz von Schuette, Michael L., Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J., Xing, Huili Grace, Saunier, Paul

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Gate-Recessed Integrated E/D GaN HEMT Technology With syntax error at token von Schuette, Michael L, Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J, Xing, Huili Grace, Saunier, Paul

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Compositional study of copper-germanium ohmic contact to n-GaN: Group III Nitrides, SiC and ZnO von SCHUETTE, Michael L, WU LU

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Metal oxide thin film semiconductor device monolithically integrated with dissimilar device on the same wafer von Green, Andrew J, Schuette, Michael L, Fitch, Jr., Robert C, Jessen, Gregg H, Leedy, Kevin D

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