Liquid hydrogen fuel system design and demonstration in a small long endurance air vehicle von Stroman, Richard O., Schuette, Michael W., Swider-Lyons, Karen, Rodgers, Joseph A., Edwards, Daniel J.

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Implications of Interfacial Thermal Transport on the Self-Heating of GaN-on-SiC High Electron Mobility Transistors von Shoemaker, Daniel C., Song, Yiwen, Kang, Kyuhwe, Schuette, Michael L., Tweedie, James S., Sheppard, Scott T., McIlwaine, Nathaniel S., Maria, Jon-Paul, Choi, Sukwon

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Nanowire Channel InAlN/GaN HEMTs With High Linearity of gm and fT von DONG SEUP LEE, HAN WANG, SAUNIER, Paul, PALACIOS, Tomás, ALLEN HSU, AZIZE, Mohamed, LABOUTIN, Oleg, YU CAO, JOHNSON, Jerry Wayne, BEAM, Edward, KETTERSON, Andrew, SCHUETTE, Michael L

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Ionic Metal-Oxide TFTs for Integrated Switching Applications von Schuette, Michael L., Green, Andrew J., Leedy, Kevin, Crespo, Antonio, Tetlak, Stephen E., Sutherlin, Karynn A., Jessen, Gregg H.

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Device Delay in GaN Transistors Under High Drain Bias Conditions von Lee, Dong Seup, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas

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Passivation effects in Ni∕AlGaN∕GaN Schottky diodes by annealing von Kim, Hyeongnam, Schuette, Michael, Jung, Hyunchul, Song, Junghui, Lee, Jaesun, Lu, Wu, Mabon, James C.

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Edge-field effects on gate capacitance, threshold voltage and low-field mobility in AlGaN/GaN HEMTs von Kim, Hyeongnam, Schuette, Michael L., Lu, Wu

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Impact of \hbox\hbox Passivation Thickness in Highly Scaled GaN HEMTs von Dong Seup Lee, Laboutin, O., Yu Cao, Johnson, W., Beam, E., Ketterson, A., Schuette, M., Saunier, P., Palacios, T.

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Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz von Schuette, Michael L., Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J., Xing, Huili Grace, Saunier, Paul

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Deep level defects and their instability in PLD-grown IGZO (In2Ga2Zn5O11) thin films studied by thermally stimulated current spectroscopy von Wang, Buguo, Look, David, Anders, Jason, Leedy, Kevin, Schuette, Michael

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Compositional Study of Copper-Germanium Ohmic Contact to n-GaN von Schuette, Michael L., Lu, Wu

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Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs von Sensale-Rodriguez, Berardi, Guo, Jia, Wang, Ronghua, Verma, Jai, Li, Guowang, Fang, Tian, Beam, Edward, Ketterson, Andrew, Schuette, Michael, Saunier, Paul, Gao, Xiang, Guo, Shiping, Snider, Gregory, Fay, Patrick, Jena, Debdeep, Xing, Huili Grace

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Passivation of surface and interface states in AlGaN/GaN HEMT structures by annealing von KIM, Hyeongnam, SCHUETTE, Michael L, LEE, Jaesun, WU LU, MABON, James C

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Nanowire Channel InAlN/GaN HEMTs With High Linearity of g and f von Lee, Dong Seup, Wang, Han, Hsu, Allen, Azize, Mohamed, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas

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MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 Ω · mm von JIA GUO, GUOWANG LI, SCHUETTE, Michael, SAUNIER, Paul, JENA, Debdeep, HUILI XING, FARIA, Faiza, YU CAO, RONGHUA WANG, VERMA, Jai, XIANG GAO, SHIPING GUO, BEAM, Edward, KETTERSON, Andrew

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InAlN Barrier Scaled Devices for Very High f and for Low-Voltage RF Applications von Saunier, Paul, Schuette, Michael L., Tso-Min Chou, Hua-Quen Tserng, Ketterson, Andrew, Beam, Edward, Pilla, Manyam, Xiang Gao

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Health Applications for Corporate Health Management von Steigner, Guido, Doarn, Charles R., Schütte, Michael, Matusiewicz, David, Thielscher, Christian

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Resistance Exercise Machine within Lower Body Negative Pressure for Counteracting Effects of Microgravity von Dailey, Christine M., Reinholtz, Charles, Russomano, Thais, Schuette, Michael, Baptista, Rafael, Cambraia, Rodrigo

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Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs von DONG SEUP LEE, LABOUTIN, Oleg, YU CAO, JOHNSON, Wayne, BEAM, Edward, KETTERSON, Andrew, SAUNIER, Paul, PALACIOS, Tomás

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Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates von Bo Song, Sensale-Rodriguez, Berardi, Ronghua Wang, Jia Guo, Zongyang Hu, Yuanzheng Yue, Faria, Faiza, Schuette, Michael, Ketterson, Andrew, Beam, Edward, Saunier, Paul, Xiang Gao, Shiping Guo, Fay, Patrick, Jena, Debdeep, Xing, Huili Grace

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