Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs von Byun, Y.H., Shur, M.S., Peczalski, A., Schuermeyer, F.L.

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Gate current model for the hot-electron regime of operation in heterostructure field effect transistors von Martinez, E.J., Shur, M.S., Schuermeyer, F.L.

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The optoelectronic response of a laterally contacted 2-D MESFET von Tsai, R., Schuermeyer, F., Peatman, W.C.B., Shur, M.

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Analytical gate current model for n-channel heterostructure field effect transistors von Martinez, E.J., Shur, M.S., Schuermeyer, F.L.

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Heterostructure insulated gate field effect transistors operated in hot electron-regime von Martinez, E., Shur, M., Schuermeyer, F.

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Gate current in complementary HFETs von Schuermeyer, F., Martinez, E., Shur, M., Grider, D.

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Characterization of fully fabricated PHEMTs using photoelectric techniques von Schuermeyer, Fritz

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Band-edge alignment in heterostructures von SCHUERMEYER, F. L, COOK, P, MARTINEZ, E, TANTILLO, J

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Gate current in self-aligned n-channel and p-channel pseudomorphic heterostructure field-effect transistors von Schuermeyer, F.L., Shur, M., Grider, D.E.

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Beryllium ion implantation in GaAsSb epilayers on InP von Merkel, K. G., Bright, V. M., Cerny, C. L. A., Schuermeyer, F. L., Solomon, J. S., Kaspi, R. A.

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Photoconduction studies on InGaAs HEMTs von Schuermeyer, F., Cheskis, D., Goldman, R.S., Wieder, H.H.

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Lack of genetic association of the three more common polymorphisms of CARD15 with psoriatic arthritis and psoriasis in a German cohort von Lascorz, J, Burkhardt, H, Hüffmeier, U, Böhm, B, Schürmeyer-Horst, F, Lohmann, J, Ständer, M, Wendler, J, Kelsch, R, Baumann, C, Küster, W, Traupe, H, Reis, A

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Experimental development and incorporation of strain in p-type GaAsSb/InAlAs single metal heterostructure field effect transistors von Cerny, C., Kaspi, R., Via, D., Ebel, J., DeSalvo, G., Quach, T., Bozada, C., Dettmer, R., Gillespie, J., Jenkins, T., Pettiford, C., Schuermeyer, F., Welch, R., O'Keefe, M., Stutz, E., Taylor, E., Van Nostrand, J.

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GaAs IGFET digital integrated circuits von Schuermeyer, F.L.

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Quantum-well doped p-channel AlGaAs/GaAs0.85Sb0.15/GaAs heterostructure field-effect transistors von YOUNG HEE BYUN, SCHUERMEYER, F. L, KWYRO LEE, SHUR, M, COOK, P, MARTINEZ, E, MARTINEZ, E. J, EVANS, K, STUTZ, C. E

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Photoemission studies on heterostructure bipolar transistors von Schuermeyer, Fritz, Zampardi, Peter J, Asbeck, Peter M

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Back bias effects on two-dimensional electron gas von SCHUERMEYER, F. L, GRZYB, J. A, CURTIS, M. J, PAULUS, M. J, CHENEY, M. E

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Exploring the biocomputing frontier von Ewing, R.L., Abdel-Aty-Zohdy, H.S., Schuermeyer, F., Liou, L., Moncrief, J.B., Rubeiz, M., Williamson, M.

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Electrical analysis methods for metal insulator semiconductor structures on GaAs von Schuermeyer, Fritz L., Hartnagel, Hans L.

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Multiple insulator layers on GaAs studied by Auger analysis von GRANT, J. T., HARTNAGEL, H. L., SCHUERMEYER, F. L., BAYRAKTAROGLU, B., MAYS, D.

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