Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors von Mikolajick, Thomas, Slesazeck, Stefan, Park, Min Hyuk, Schroeder, Uwe

Volltext

The fundamentals and applications of ferroelectric HfO2 von Schroeder, Uwe, Park, Min Hyuk, Mikolajick, Thomas, Hwang, Cheol Seong

Volltext

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films von Mueller, Stefan, Mueller, Johannes, Singh, Aarti, Riedel, Stefan, Sundqvist, Jonas, Schroeder, Uwe, Mikolajick, Thomas

Volltext

Review and perspective on ferroelectric HfO2-based thin films for memory applications von Park, Min Hyuk, Lee, Young Hwan, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong

Volltext

On the structural origins of ferroelectricity in HfO2 thin films von Sang, Xiahan, Grimley, Everett D., Schenk, Tony, Schroeder, Uwe, LeBeau, James M.

Volltext

Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2 von Pešić, Milan, Hoffmann, Michael, Richter, Claudia, Mikolajick, Thomas, Schroeder, Uwe

Volltext

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide von Schenk, Tony, Hoffmann, Michael, Ocker, Johannes, Pešić, Milan, Mikolajick, Thomas, Schroeder, Uwe

Volltext

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 von Hoffmann, Michael, Pešić, Milan, Chatterjee, Korok, Khan, Asif I., Salahuddin, Sayeef, Slesazeck, Stefan, Schroeder, Uwe, Mikolajick, Thomas

Volltext

Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors von Pešić, Milan, Fengler, Franz Paul Gustav, Larcher, Luca, Padovani, Andrea, Schenk, Tony, Grimley, Everett D., Sang, Xiahan, LeBeau, James M., Slesazeck, Stefan, Schroeder, Uwe, Mikolajick, Thomas

Volltext

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films von Park, Min Hyuk, Lee, Young Hwan, Kim, Han Joon, Kim, Yu Jin, Moon, Taehwan, Kim, Keum Do, Müller, Johannes, Kersch, Alfred, Schroeder, Uwe, Mikolajick, Thomas, Hwang, Cheol Seong

Volltext

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment von Park, Min Hyuk, Lee, Young Hwan, Kim, Han Joon, Schenk, Tony, Lee, Woongkyu, Kim, Keum Do, Fengler, Franz P G, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong

Volltext

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material von Schroeder, Uwe, Richter, Claudia, Park, Min Hyuk, Schenk, Tony, Pešić, Milan, Hoffmann, Michael, Fengler, Franz P. G, Pohl, Darius, Rellinghaus, Bernd, Zhou, Chuanzhen, Chung, Ching-Chang, Jones, Jacob L, Mikolajick, Thomas

Volltext

HfxZr1 − xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison von Materano, Monica, Richter, Claudia, Mikolajick, Thomas, Schroeder, Uwe

Volltext

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films von Chernikova, Anna G, Kozodaev, Maxim G, Negrov, Dmitry V, Korostylev, Evgeny V, Park, Min Hyuk, Schroeder, Uwe, Hwang, Cheol Seong, Markeev, Andrey M

Volltext

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors von Mulaosmanovic, Halid, Ocker, Johannes, Müller, Stefan, Schroeder, Uwe, Müller, Johannes, Polakowski, Patrick, Flachowsky, Stefan, van Bentum, Ralf, Mikolajick, Thomas, Slesazeck, Stefan

Volltext

Understanding the formation of the metastable ferroelectric phase in hafnia-zirconia solid solution thin films von Park, Min Hyuk, Lee, Young Hwan, Kim, Han Joon, Kim, Yu Jin, Moon, Taehwan, Kim, Keum Do, Hyun, Seung Dam, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong

Volltext

Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf0.5Zr0.5O2 Thin Films von Mehmood, Furqan, Mikolajick, Thomas, Schroeder, Uwe

Volltext

Polarization switching in thin doped HfO2 ferroelectric layers von Materano, Monica, Lomenzo, Patrick D., Mulaosmanovic, Halid, Hoffmann, Michael, Toriumi, Akira, Mikolajick, Thomas, Schroeder, Uwe

Volltext

Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides von Park, Min Hyuk, Lee, Young Hwan, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong

Volltext

Many routes to ferroelectric HfO2: A review of current deposition methods von Hsain, Hanan Alexandra, Lee, Younghwan, Materano, Monica, Mittmann, Terence, Payne, Alexis, Mikolajick, Thomas, Schroeder, Uwe, Parsons, Gregory N., Jones, Jacob L.

Volltext