A 271.8 nm deep-ultraviolet laser diode for room temperature operation von Zhang, Ziyi, Kushimoto, Maki, Sakai, Tadayoshi, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing von Zhang, Ziyi, Kushimoto, Maki, Yoshikawa, Akira, Aoto, Koji, Sasaoka, Chiaki, Schowalter, Leo J., Amano, Hiroshi

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The 2020 UV emitter roadmap von Amano, Hiroshi, Collazo, Ramón, Santi, Carlo De, Einfeldt, Sven, Funato, Mitsuru, Glaab, Johannes, Hagedorn, Sylvia, Hirano, Akira, Hirayama, Hideki, Ishii, Ryota, Kashima, Yukio, Kawakami, Yoichi, Kirste, Ronny, Kneissl, Michael, Martin, Robert, Mehnke, Frank, Meneghini, Matteo, Ougazzaden, Abdallah, Parbrook, Peter J, Rajan, Siddharth, Reddy, Pramod, Römer, Friedhard, Ruschel, Jan, Sarkar, Biplab, Scholz, Ferdinand, Schowalter, Leo J, Shields, Philip, Sitar, Zlatko, Sulmoni, Luca, Wang, Tao, Wernicke, Tim, Weyers, Markus, Witzigmann, Bernd, Wu, Yuh-Renn, Wunderer, Thomas, Zhang, Yuewei

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Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes von Kushimoto, Maki, Zhang, Ziyi, Yoshikawa, Akira, Aoto, Koji, Honda, Yoshio, Sasaoka, Chiaki, Schowalter, Leo J., Amano, Hiroshi

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Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes von Zhang, Ziyi, Kushimoto, Maki, Horita, Masahiro, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates von Lee, Kevin, Cho, YongJin, Schowalter, Leo J., Toita, Masato, Xing, Huili Grace, Jena, Debdeep

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Design and characterization of a low-optical-loss UV-C laser diode von Zhang, Ziyi, Kushimoto, Maki, Sakai, Tadayoshi, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates von Lee, Kevin, Page, Ryan, Protasenko, Vladimir, Schowalter, Leo J., Toita, Masato, Xing, Huili Grace, Jena, Debdeep

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Pseudomorphic growth of a thin-GaN layer on the AlN single-crystal substrate using metal organic vapor phase epitaxy von Yoshikawa, Akira, Nagatomi, Takaharu, Nagase, Kazuhiro, Sugiyama, Sho, Schowalter, Leo J.

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Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning von Cho, YongJin, Chang, Celesta S., Lee, Kevin, Gong, Mingli, Nomoto, Kazuki, Toita, Masato, Schowalter, Leo J., Muller, David A., Jena, Debdeep, Xing, Huili Grace

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Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate von Kushimoto, Maki, Zhang, Ziyi, Honda, Yoshio, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate von Kushimoto, Maki, Zhang, Ziyi, Sugiyama, Naoharu, Honda, Yoshio, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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AlGaN Light‐Emitting Diodes on AlN Substrates Emitting at 230nm von Moe, Craig G, Sugiyama, Sho, Kasai, Jumpei, Grandusky, James R, Schowalter, Leo J

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270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power von Grandusky, James R, Chen, Jianfeng, Gibb, Shawn R, Mendrick, Mark C, Moe, Craig G, Rodak, Lee, Garrett, Gregory A, Wraback, Michael, Schowalter, Leo J

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Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection von Zhang, Ziyi, Kushimoto, Maki, Yoshikawa, Akira, Aoto, Koji, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

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Some effects of oxygen impurities on AlN and GaN von Slack, Glen A., Schowalter, Leo J., Morelli, Donald, Freitas, Jaime A.

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AlGaN Light‐Emitting Diodes on AlN Substrates Emitting at 230 nm von Moe, Craig G., Sugiyama, Sho, Kasai, Jumpei, Grandusky, James R., Schowalter, Leo J.

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Large-area AlN substrates for electronic applications: An industrial perspective von Bondokov, Robert T., Mueller, Stephan G., Morgan, Kenneth E., Slack, Glen A., Schujman, Sandra, Wood, Mark C., Smart, Joseph A., Schowalter, Leo J.

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Manufacturability of high power ultraviolet-C light emitting diodes on bulk aluminum nitride substrates von Grandusky, James R., Zhong, Zhibai, Chen, Jasson, Leung, Charles, Schowalter, Leo J.

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Ultraviolet semiconductor laser diodes on bulk AlN von Kneissl, Michael, Yang, Zhihong, Teepe, Mark, Knollenberg, Cliff, Schmidt, Oliver, Kiesel, Peter, Johnson, Noble M., Schujman, Sandra, Schowalter, Leo J.

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