Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes von Schiavon, Dario, Binder, Michael, Peter, Matthias, Galler, Bastian, Drechsel, Philipp, Scholz, Ferdinand

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Functionalized GaN/GaInN heterostructures for hydrogen sulfide sensing von Shahbaz, Jassim, Schneidereit, Martin, Thonke, Klaus, Scholz, Ferdinand

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Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence von Hocker, Matthias, Maier, Pascal, Jerg, Lisa, Tischer, Ingo, Neusser, Gregor, Kranz, Christine, Pristovsek, Markus, Humphreys, Colin J., Leute, Robert A. R., Heinz, Dominik, Rettig, Oliver, Scholz, Ferdinand, Thonke, Klaus

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Differential phase contrast 2.0—Opening new “fields” for an established technique von Lohr, Matthias, Schregle, Ralph, Jetter, Michael, Wächter, Clemens, Wunderer, Thomas, Scholz, Ferdinand, Zweck, Josef

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Transformations of Carbon Adsorbates on Graphene Substrates under Extreme Heat von Westenfelder, Benedikt, Meyer, Jannik C, Biskupek, Johannes, Kurasch, Simon, Scholz, Ferdinand, Krill, Carl E, Kaiser, Ute

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Investigation of Boron Containing AlN and AlGaN Layers Grown by MOVPE von Rettig, Oliver, Scholz, Jan‐Patrick, Steiger, Natja, Bauer, Sebastian, Hubáček, Tomáš, Zíková, Markéta, Li, Yueliang, Qi, Haoyuan, Biskupek, Johannes, Kaiser, Ute, Thonke, Klaus, Scholz, Ferdinand

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Internal quantum efficiency and carrier injection efficiency of c-plane, {101‾1} and {112‾2} InGaN/GaN-based light-emitting diodes von Wang, Junjun, Meisch, Tobias, Heinz, Dominik, Zeller, Raphael, Scholz, Ferdinand

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Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells von Naskar, Nilanjon, Schneidereit, Martin F., Huber, Florian, Chakrabortty, Sabyasachi, Veith, Lothar, Mezger, Markus, Kirste, Lutz, Fuchs, Theo, Diemant, Thomas, Weil, Tanja, Behm, R. Jürgen, Thonke, Klaus, Scholz, Ferdinand

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Spectroscopic study of semipolar (112¯2)-HVPE GaN exhibiting high oxygen incorporation von Schustek, Philipp, Hocker, Matthias, Klein, Martin, Simon, Ulrich, Scholz, Ferdinand, Thonke, Klaus

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Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 10 1 ¯ 1 ) semipolar GaN template von Li, Yueliang, Qi, Haoyuan, Meisch, Tobias, Hocker, Matthias, Thonke, Klaus, Scholz, Ferdinand, Kaiser, Ute

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Strain and defects in Si-doped (Al)GaN epitaxial layers von Forghani, Kamran, Schade, Lukas, Schwarz, Ulrich T., Lipski, Frank, Klein, Oliver, Kaiser, Ute, Scholz, Ferdinand

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MOVPE of Group‐III Heterostructures for Optoelectronic Applications von Scholz, Ferdinand

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Three-dimensional cathodoluminescence characterization of a semipolar GaInN based LED sample von Hocker, Matthias, Maier, Pascal, Tischer, Ingo, Meisch, Tobias, Caliebe, Marian, Scholz, Ferdinand, Mundszinger, Manuel, Kaiser, Ute, Thonke, Klaus

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Compound Semiconductors: Physics, Technology, and Device Concepts von Scholz, Ferdinand

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GaInN Quantum Wells as Optochemical Transducers for Chemical Sensors and Biosensors von Heinz, Dominik, Huber, Florian, Spiess, Maximilian, Asad, Muhammad, Linyuan Wu, Rettig, Oliver, Donghao Wu, Neuschl, Benjamin, Bauer, Sebastian, Yuzhou Wu, Chakrabortty, Sabyasachi, Hibst, Nicolas, Strehle, Steffen, Weil, Tanja, Thonke, Klaus, Scholz, Ferdinand

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Compound Semiconductors: Physics, Technology, and Device Concepts von Scholz, Ferdinand

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Band-gap measurements of direct and indirect semiconductors using monochromated electrons von Gu, Lin, Srot, Vesna, Sigle, Wilfried, Koch, Christoph, van Aken, Peter, Scholz, Ferdinand, Thapa, Sarad B., Kirchner, Christoph, Jetter, Michael, Rühle, Manfred

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Semipolar (112-2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates von Dinh, Duc V., Akhter, Mahbub, Presa, Silvino, Kozlowski, Grzegorz, O'Mahony, Donagh, Maaskant, Pleun P., Brunner, Frank, Caliebe, Marian, Weyers, Markus, Scholz, Ferdinand, Corbett, Brian, Parbrook, Peter J.

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Planar semipolar ( 10 1 ¯ 1 ) GaN on ( 11 2 ¯ 3 ) sapphire von Schwaiger, Stephan, Argut, Ilona, Wunderer, Thomas, Rösch, Rudolf, Lipski, Frank, Biskupek, Johannes, Kaiser, Ute, Scholz, Ferdinand

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High Bandwidth Freestanding Semipolar (11-22) InGaN/GaN Light-Emitting Diodes von Zhiheng Quan, Dinh, Duc V., Presa, Silvino, Roycroft, Brendan, Foley, Ann, Akhter, Mahbub, O'Mahony, Donagh, Maaskant, Pleun P., Caliebe, Marian, Scholz, Ferdinand, Parbrook, Peter J., Corbett, Brian

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