Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications von Shinohara, Keisuke, Regan, Dean C., Yan Tang, Corrion, Andrea L., Brown, David F., Wong, Joel C., Robinson, John F., Fung, Helen H., Schmitz, Adele, Oh, Thomas C., Kim, Samuel Jungjin, Chen, Peter S., Nagele, Robert G., Margomenos, Alexandros D., Micovic, Miroslav

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Isotopically enhanced triple-quantum-dot qubit von Eng, Kevin, Ladd, Thaddeus D, Smith, Aaron, Borselli, Matthew G, Kiselev, Andrey A, Fong, Bryan H, Holabird, Kevin S, Hazard, Thomas M, Huang, Biqin, Deelman, Peter W, Milosavljevic, Ivan, Schmitz, Adele E, Ross, Richard S, Gyure, Mark F, Hunter, Andrew T

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A Flexible Design Platform for Si/SiGe Exchange-Only Qubits with Low Disorder von Ha, Wonill, Ha, Sieu D, Choi, Maxwell D, Tang, Yan, Schmitz, Adele E, Levendorf, Mark P, Lee, Kangmu, Chappell, James M, Adams, Tower S, Hulbert, Daniel R, Acuna, Edwin, Noah, Ramsey S, Matten, Justine W, Jura, Michael P, Wright, Jeffrey A, Rakher, Matthew T, Borselli, Matthew G

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Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic Ron E/D-mode GaN HEMTs von Wong, Joel, Shinohara, Keisuke, Corrion, Andrea L., Brown, David F., Carlos, Zenon, Williams, Adam, Yan Tang, Robinson, John F., Khalaf, Isaac, Fung, Helen, Schmitz, Adele, Oh, Thomas, Kim, Samuel, Chen, Steven, Burnham, Shawn, Margomenos, Alex, Micovic, Miroslav

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Ultrahigh-Speed GaN High-Electron-Mobility Transistors With f/f} of 454/444 GHz von Yan Tang, Shinohara, Keisuke, Regan, Dean, Corrion, Andrea, Brown, David, Wong, Joel, Schmitz, Adele, Fung, Helen, Kim, Samuel, Micovic, Miroslav

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Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic R on E/D-mode GaN HEMTs von Wong, Joel, Shinohara, Keisuke, Corrion, Andrea L., Brown, David F., Carlos, Zenon, Williams, Adam, Tang, Yan, Robinson, John F., Khalaf, Isaac, Fung, Helen, Schmitz, Adele, Oh, Thomas, Kim, Samuel, Chen, Steven, Burnham, Shawn, Margomenos, Alex, Micovic, Miroslav

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Lateral Graphene Heterostructure Field-Effect Transistor von Moon, Jeong S., Hwa-chang Seo, Stratan, Fred, Antcliffe, Mike, Schmitz, Adele, Ross, Richard S., Kiselev, Andrey A., Wheeler, Virginia D., Nyakiti, Luke O., Gaskill, D. Kurt, Kang-Mu Lee, Asbeck, Peter M.

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Surface-micromachined RF MEMs switches on GaAs substrates von Hyman, Daniel, Lam, Juan, Warneke, Brett, Schmitz, Adele, Hsu, T. Y., Brown, Julia, Schaffner, James, Walston, Andy, Loo, Robert Y., Mehregany, Mehran, Lee, Jae

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High-Speed 501-Stage DCFL GaN Ring Oscillator Circuits von Corrion, Andrea L., Shinohara, Keisuke, Regan, Dean, Tang, Yan, Brown, David, Robinson, John F., Fung, Helen H., Schmitz, Adele, Le, Duc, Kim, Samuel Jungjin, Oh, Thomas C., Micovic, Miroslav

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Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications : GaN ELECTRONIC DEVICES von SHINOHARA, Keisuke, REGAN, Dean C, SAMUEL JUNGJIN KIM, CHEN, Peter S, NAGELE, Robert G, MARGOMENOS, Alexandros D, MICOVIC, Miroslav, YAN TANG, CORRION, Andrea L, BROWN, David F, WONG, Joel C, ROBINSON, John F, FUNG, Helen H, SCHMITZ, Adele, OH, Thomas C

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Graphene and Lateral Heterostructure for THz Imaging von Jeong-Sun Moon, Hwa-Chang Seo, Baohua Yang, Antcliffe, Mike, Kyung-Ah Son, Wong, Danny, Schmitz, Adele, Fung, Helen, Le, Dustin, McGuire, Chuck, Jong-Chan Kang, Song, Hyok J.

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A 20 mW, 150 GHz InP HEMT MMIC power amplifier module von Samoska, L., Peralta, A., Ming Hu, Micovic, M., Schmitz, A.

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(Invited) Coherent Manipulation of a Si/SiGe-based Singlet-Triplet Qubit von Croke, Edward T., Borselli, Matthew G, Maune, Brett M., Huang, Biqin, Ladd, Thaddeus D., Deelman, Peter W., Holabird, Kevin S., Kiselev, Andrey A., Alvarado-Rodriguez, Ivan, Ross, Richard S., Schmitz, Adele E., Sokolich, Marko, Hazard, Thomas M., Gyure, Mark F., Hunter, Andrew T.

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Fabricating sub-micron contacts to buried well devices von Schmitz, Adele, Lee, Kangmu Min, Choi, Maxwell Daehan, Jura, Michael Pemberton, Jackson, Clayton, Chappell, James, Wright, Jeffrey Alden, Ha, Wonill

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112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers von Agarwal, B., Schmitz, A.E., Brown, J.J., Matloubian, M., Case, M.G., Le, M., Lui, M., Rodwell, M.J.W.

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Reliability of 100 nm silicon nitride capacitors in an InP HEMT MMIC process von Rowe, William J., Paine, Bruce M., Schmitz, Adele E., Walden, Robert H., Delaney, Michael J.

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FABRICATING SUB-MICRON CONTACTS TO BURIED WELL DEVICES von CHOI, Maxwell Daehan, JACKSON, Clayton, CHAPPELL, James, JURA, Michael Pemberton, HA, Wonill, WRIGHT, Jeffrey Alden, SCHMITZ, Adele, LEE, Kangmu Min

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A flexible design platform for Si/SiGe exchange-only qubits with low disorder von Ha, Wonill, Ha, Sieu D, Choi, Maxwell D, Tang, Yan, Schmitz, Adele E, Levendorf, Mark P, Lee, Kangmu, Chappell, James M, Adams, Tower S, Hulbert, Daniel R, Acuna, Edwin, Noah, Ramsey S, Matten, Justine W, Jura, Michael P, Wright, Jeffrey A, Rakher, Matthew T, Borselli, Matthew G

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FABRICATING SUB-MICRON CONTACTS TO BURIED WELL DEVICES von Schmitz, Adele, Lee, Kangmu Min, Choi, Maxwell Daehan, Jura, Michael Pemberton, Jackson, Clayton, Chappell, James, Wright, Jeffrey Alden, Ha, Wonill

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FABRICATING SUB-MICRON CONTACTS TO BURIED WELL DEVICES von CHOI, Maxwell Daehan, JACKSON, Clayton, CHAPPELL, James, JURA, Michael Pemberton, HA, Wonill, WRIGHT, Jeffrey Alden, SCHMITZ, Adele, LEE, Kangmu Min

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