Experimental Realization of an Eight-Stage XRAM Generator Based on ICCOS Semiconductor Opening Switches, Fed by a Magnetodynamic Storage System von Dedie, P., Brommer, V., Scharnholz, S.

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ICCOS Countercurrent-Thyristor High-Power Opening Switch for Currents Up to 28 kA von Dedie, P., Brommer, V., Scharnholz, S.

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Refurbishment of a 30-MJ-Pulsed Power Supply for Pulsed Power Applications von Liebfried, O., Brommer, V., Scharnholz, S., Spahn, E.

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Optical triggering of SiC thyristors using UV LEDs von DHEILLY, N, PAQUES, G, SCHARNHOLZ, S, BEVILACQUA, P, RAYNAUD, C, NGUYEN, D.-M, DE DONCKER, R. W, PLANSON, D

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High-power MOSFETs and fast-switching thyristors utilized as opening switches for inductive storage systems von Scharnholz, S., Brommer, V., Buderer, G., Spahn, E.

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Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes von Raynaud, Christophe, Scharnholz, Sigo, Vang, H., Lazar, Mihai, Pâques, Gontran, Planson, Dominique

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Twenty-Stage Toroidal XRAM Generator Switched by Countercurrent Thyristors von Dedié, Philipp, Brommer, V, Scharnholz, S

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Preliminary Investigation of Laser Induced Photoconductivity in 4H-SiC PiN Diodes and HPSI Substrate von Spahn, Emil, Couderc, Vincent, Konrath, Jens Peter, Scharnholz, Sigo, Vergne, Bertrand, Lévêque, Philippe

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Edge termination strategies for a 4 kV 4H-SiC thyristor von BROSSELARD, P, PLANSON, D, SCHARNHOLZ, S, RAYNAUD, C, ZORNGIEBEL, V, LAZAR, M, CHANTE, J.-P, SPAHN, E

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1.2 kV Pin Diodes with SiCrystal Epiwafer von Raynaud, Christophe, Vang, Heu, Lazar, Mihai, Cremillieu, Pierre, Leclercq, Jean Louis, Brosselard, Pierre, Chante, Jean-Pierre, Scharnholz, Sigo, Planson, Dominique

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Hot carrier-induced photon emission in 6H and 4H–SiC MOSFETs von Bano, E, Banc, C, Ouisse, T, Scharnholz, S

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A High-Power Capacitor Charger Using IGCTs in a Boost Converter Topology von Brommer, Volker, Liebfried, Oliver, Scharnholz, Sigo

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High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension von Paques, G., Scharnholz, S., Dheilly, N., Planson, D., De Doncker, R. W.

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Modular 50-kV IGBT Switch for Pulsed-Power Applications von Zorngiebel, Volker, Hecquard, Mickaël, Spahn, Emil, Welleman, Adriaan, Scharnholz, Sigo

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Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor von Spahn, Emil, Raynaud, Christophe, Zorngiebel, Volker, Lazar, Mihai, Brosselard, Pierre, Chante, Jean-Pierre, Scharnholz, Sigo, Planson, Dominique

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Fabrication and Characterisation of High-Voltage SiC-Thyristors von Spahn, Emil, Raynaud, Christophe, Zorngiebel, Volker, Brosselard, Pierre, Arssi, N., Chante, Jean-Pierre, Scharnholz, Sigo, Kurz, H., Planson, Dominique, Spangenberg, B.

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Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC von Stein, J., Scharnholz, Sigo, Kurz, H., Hellmund, O., Spangenberg, B.

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Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs von Gölz, A., Scharnholz, Sigo, Kurz, H., Stein von Kamienski, E., Leonhard, C.

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Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED von Bevilacqua, Pascal, Scharnholz, Sigo, Dheilly, Nicolas, Pâques, Gontran, Planson, Dominique

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Passivation of interface traps in MOS-devices on n- and p-type 6H-SiC von Stein von Kamienski, E.G., Leonhard, C., Scharnholz, S., Gölz, A., Kurz, H.

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