Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors von Marino, F.A., Faralli, N., Palacios, T., Ferry, D.K., Goodnick, S.M., Saraniti, M.

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Energy Relaxation and Non-linear Transport in InAs Nanowires von Hathwar, R, Saraniti, M, Goodnick, S M

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The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length von Akis, R., Ayubi-Moak, J.S., Faralli, N., Ferry, D.K., Goodnick, S.M., Saraniti, M.

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Figures of merit in high-frequency and high-power GaN HEMTs von Marino, F A, Faralli, N, Ferry, D K, Goodnick, S M, Saraniti, M

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First-principles modeling of high-field transport in diamond von Shoemaker, J., Vatan, R., Biswas, T., Singh, A., Saraniti, M., Goodnick, S. M.

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Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors von Saraniti, M., Goodnick, S.M.

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Teflon™-coated silicon apertures for supported lipid bilayer membranes von Wilk, S. J., Goryll, M., Laws, G. M., Goodnick, S. M., Thornton, T. J., Saraniti, M., Tang, J., Eisenberg, R. S.

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Ballistic Transport in InP-Based HEMTs von Akis, R., Faralli, N., Ferry, D.K., Goodnick, S.M., Phatak, K.A., Saraniti, M.

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Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors von Akis, R, Ayubi-Moak, J S, Ferry, D K, Goodnick, S M, Faralli, N, Saraniti, M

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Comparative analysis of SOI and GOI MOSFETs von Beysserie, S., Branlard, J., Aboud, S., Goodnick, S.M., Saraniti, M.

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Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs von Akis, R., Faralli, N., Goodnick, S. M., Ferry, D. K., Saraniti, M.

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Full-band CMC simulations of terahertz HEMTs von Ferry, D K, Ayubi-Moak, J, Akis, R, Faralli, N, Saraniti, M, Goodnick, S M

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Towards the global modeling of InGaAs-based pseudomorphic HEMTs von Ayubi-Moak, J. S., Akis, R., Ferry, D. K., Goodnick, S. M., Faralli, N., Saraniti, M.

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Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer von Formicone, G.F., Saraniti, M., Vasileska, D.Z., Ferry, D.K.

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Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues von Guerra, D., Ferry, D. K., Goodnick, S. M., Saraniti, M., Marino, F. A.

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Global Modeling of high frequency devices von Ayubi-Moak, J. S., Goodnick, S. M., Saraniti, M.

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Overshoot velocity in ultra-broadband THz studies in GaAs and InP von Saraniti, M., Hu, Y., Goodnick, S.M., Wigger, S.J.

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Hot electron effects in ultra-short gate length InAs/InAlAs HEMTs von Ayubi-Moak, J. S., Akis, R., Saraniti, M., Ferry, D. K., Goodnick, S. M.

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Full-band Monte Carlo simulations of photo excitation in silicon diode structures von Aboud, S, Saraniti, M, Goodnick, S, Brodschelm, A, Leitenstorfer, A

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Carrier Dynamics Investigation on Passivation Dielectric Constant and RF Performance of Millimeter-Wave Power GaN HEMTs von Guerra, D., Saraniti, M., Ferry, D. K., Goodnick, S. M., Marino, F. A.

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