Monopulse Lasers Based on Yttrium Aluminum Garnet with Neodynium Ion with Resonators Based on an Optical Circuit of a Four-Pass Amplifier with Transverse Diode Pumping von Lyashenko, A. I., Volodina, E. M., Sapozhnikov, S. M., Podkopaev, A. V.

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A Wide Temperature-Range Measuring Unit for Registering the Parameters of Semiconductor Pulsed-Laser Emission Fields von Arakcheev, P. V., Bezdelov, V. L., Buryi, E. V., Danilov, A. I., Sapozhnikov, S. M., Semerenko, D. A., Udarov, I. Yu, Shlemenkov, A. L.

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Semiconductor Lasers with Improved Lasing Characteristics von Danilov, A. I., Ivanov, A. V., Konyaev, V. P., Kurnyavko, Yu. V., Ladugin, M. A., Lobintsov, A. V., Marmalyuk, A. A., Sapozhnikov, S. M., Simakov, V. A.

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The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers von Telegin, K.Yu, Ladugin, M.A., Andreev, A.Yu, Yarotskaya, I.V., Volkov, N.A., Padalitsa, A.A., Lobintsov, A.V., Aparnikov, A.N., Sapozhnikov, S.M., Marmalyuk, A.A.

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Triple integrated laser - thyristor von Bagaev, T.A., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Kurnyavko, Yu.V., Lobintsov, A.V., Danilov, A.I., Sapozhnikov, S.M., Krichevskii, V.V., Konyaev, V.P., Simakov, V.A., Slipchenko, S.O., Podoskin, A.A., Pikhtin, N.A.

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Double integrated laser-thyristor von Bagaev, T.A., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Kurnyavko, Yu.V., Lobintsov, A.V., Danilov, A.I., Sapozhnikov, S.M., Krichevskii, V.V., Zverkov, M.V., Konyaev, V.P., Simakov, V.A., Slipchenko, S.O., Podoskin, A.A., Pikhtin, N.A.

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Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures von Ladugin, M.A., Bagaev, T.A., Marmalyuk, A.A., Koval', Yu.P., Konyaev, V.P., Sapozhnikov, S.M., Lobintsov, A.V., Simakov, V.A.

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AlGaInAs/InP semiconductor lasers with an increased electron barrier von Marmalyuk, A.A., Ivanov, A.V., Kurnosov, V.D., Kurnosov, K.V., Ladugin, M.A., Lobintsov, A.V., Padalitsa, A.A., Romantsevich, V.I., Ryaboshtan, Yu.L., Sapozhnikov, S.M., Svetogorov, V.N., Simakov, V.A.

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Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62 von Ladugin, M.A., Marmalyuk, A.A., Padalitsa, A.A, Telegin, K.Yu, Lobintsov, A.V., Sapozhnikov, S.M., Danilov, A.I., Podkopaev, A.V., Simakov, V.A.

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Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70 von Ladugin, M.A., Marmalyuk, A.A., Padalitsa, A.A., Bagaev, T.A., Andreev, A.Yu, Telegin, K.Yu, Lobintsov, A.V., Davydova, E.I., Sapozhnikov, S.M., Danilov, A.I., Podkopaev, A.V., Ivanova, E.B., Simakov, V.A.

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Metalorganic vapour phase epitaxy of GaAs/AlGaAs nanoheterostructures for a quantum cascade laser von Marmalyuk, A. A., Padalitsa, A. A., Ladugin, M. A., Gorlachuk, P. V., Yarotskaya, I. V., Andreev, A. Yu, Bagaev, T. A., Lobintsov, A. V., Kurnyavko, Yu. V., Sapozhnikov, S. M., Danilov, A. I., Telegin, K. Yu, Simakov, V. A., Zasavitskii, I. I., Zarubin, S. S.

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AlGaAs/GaAs laser diode bars with improved thermal stability von Marmalyuk, A.A., Ladugin, M.A., Andreev, A.Yu, Telegin, K.Yu, Yarotskaya, I.V., Meshkov, A.S., Konyaev, V.P., Sapozhnikov, S.M., Lebedeva, E.I., Simakov, V.A.

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808-nm laser diode bars based on epitaxially stacked double heterostructures von Davydova, Evgeniya I, Konyaev, V P, Ladugin, M A, Lebedeva, E I, Marmalyuk, Aleksandr A, Padalitsa, A A, Petrov, S V, Sapozhnikov, S M, Simakov, V A, Uspenskii, Mikhail B, Yarotskaya, I V

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Dual-wavelength laser diodes based on epitaxially stacked heterostructures von Davydova, Evgeniya I, Konyaev, V P, Ladugin, M A, Lebedeva, E I, Marmalyuk, Aleksandr A, Padalitsa, A A, Petrov, S V, Sapozhnikov, S M, Simakov, V A, Uspenskii, Mikhail B, Yarotskaya, I V

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150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics von Abazadze, Aleksandr Yu, Bezotosnyi, V V, Gur'eva, T G, Davydova, Evgeniya I, Zalevskii, I D, Zverev, Georgii M, Lobintsov, A V, Marmalyuk, Aleksandr A, Sapozhnikov, S M, Simakov, V A, Uspenskii, Mikhail B, Shishkin, Viktor A

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Constructional features of a LISD-2M laser velocimeter and rangefinder von Abazadze, Yu V, Litsarev, N A, Pochtarev, V L, Pashkov, V A, Khachiev, A Yu, Kazakov, A A, Koval', Yu P, Simakov, V A, Neustrueva, V N, Egorova, G S, Zalevskii, I D, Borodkin, A A, Sapozhnikov, S M

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Quantum cascade laser based on GaAs/Al{sub 0.45}Ga{sub 0.55}As heteropair grown by MOCVD von Zasavitskii, I I, Zubov, A N, Andreev, A Yu, Bagaev, T A, Gorlachuk, P V, Ladugin, M A, Padalitsa, A A, Lobintsov, A V, Sapozhnikov, S M, Marmalyuk, A A

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Quantum cascade laser based on GaAs/Al 0.45 Ga 0.55 As heteropair grown by MOCVD von Zasavitskii, I I, Zubov, A N, Andreev, A Yu, Bagaev, T A, Gorlachuk, P V, Ladugin, M A, Padalitsa, A A, Lobintsov, A V, Sapozhnikov, S M, Marmalyuk, A A

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Quantum cascade laser based on GaAs/Al sub(0.45) Ga sub(0.55) As heteropair grown by MOCVD von Zasavitskii, I, Zubov, A N, Andreev, A Yu, Bagaev, T A, Gorlachuk, P V, Ladugin, M A, Padalitsa, A A, Lobintsov, A V, Sapozhnikov, S M, Marmalyuk, A A

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Optimal output mirror reflection coefficient for powerful InGaAs/AlGaAs laser diode arrays von Bogdanovich, M.V., Kabanov, V.V., Lebiadok, Y.V., Ryabtsev, A.G., Ryabtsev, G.I., Shchemelev, M.A., Kurlenkov, S.S., Sapozhnikov, S.M., Mehta, S.K.

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