Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(1 0 0) substrates von Takagi, Y, Yonezu, H, Samonji, K, Tsuji, T, Ohshima, N

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Evolution process of cross-hatch patterns and reduction of surface roughness in (InAs)m(GaAs)n strained short-period superlattices and InGaAs alloy layers grown on GaAs von Samonji, K., Yonezu, H., Takagi, Y., Ohshima, N.

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Reduction of threading dislocation density in InP-on-Si heteroepitaxy with strained short-period superlattices von Samonji, K., Yonezu, H., Takagi, Y., Iwaki, K., Ohshima, N., Shin, J. K., Pak, K.

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Catastrophic-Optical-Damage-Free InGaN Laser Diodes With Epitaxially Formed Window Structure von Kawaguchi, M., Kasugai, H., Samonji, K., Hagino, H., Orita, K., Yamanaka, K., Yuri, M., Takigawa, S.

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Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers von Luyo-Alvarado, J., Meléndez-Lira, M., López-López, M., Hernández-Calderón, I., Constantino, M. E., Navarro-Contreras, H., Vidal, M. A., Takagi, Y., Samonji, K., Yonezu, H.

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Growth of AlN by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates von Fujito, Kenji, Hashimoto, Tadao, Samonji, Katsuya, Speck, James S, Nakamura, Shuji

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Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate von Furukawa, Yuzo, Yonezu, Hiroo, Ojima, Kaoru, Samonji, Katsuya, Fujimoto, Yasuhiro, Momose, Kenji, Aiki, Kunio

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Growth of AlN by the Chemical Vapor Reaction Process von Hashimoto, Tadao, Fujito, Kenji, Samonji, Katsuya, Speck, James S., Nakamura, Shuji

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Catastrophic-optical-damage-free InGaN laser diodes with epitaxially-formed window structure von Kawaguchi, M, Kasugai, H, Samonji, K, Hagino, H, Orita, K, Yamanaka, K, Yuri, M, Takigawa, S

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Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding von Murai, Akihiko, Kruse, Carsten, Samonji, Katsuya, McCarthy, Lee, Speck, James S., Mishra, Umesh K., DenBaars, Steven P., Hommel, Detlef

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Lattice-Relaxation Process of (InAs) m (GaAs) n Strained Short-Period Superlattices Grown on GaAs von Katsuya Samonji, Katsuya Samonji, Hiroo Yonezu, Hiroo Yonezu, Naoki Ohshima, Naoki Ohshima

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Suppression of threading dislocation generation in GaAs-on-Si with strained short-period superlattices von Takagi, Yasufumi, Yonezu, Hiroo, Kawai, Takahiro, Hayashida, Keiji, Samonji, Katsuya, Ohshima, Naoki, Pak, Kangsa

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Realization of two-dimensional growth and suppression of threading dislocation generation in (InP)1(GaAs)n quaternary strained short-period superlattices grown on GaAs von HAYASHIDA, K, TAKAGI, Y, SAMONJI, K, YONEZU, K, YOKOZEKI, M, OHSHIMA, N, PAK, K

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6.3W InGaN laser diode array with highly efficient wide-striped emitters von Samonji, Katsuya, Yoshida, S., Hagino, H., Yamanaka, K., Takigawa, S.

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