Carrier Generation in p‑Type Wide-Gap Oxide: SnNb2O6 Foordite von Samizo, Akane, Kikuchi, Naoto, Aiura, Yoshihiro, Nishio, Keishi, Mibu, Ko

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Disorders and oxygen vacancies in p‐type Sn2B2O7 (B = Nb, Ta): Role of the B‐site element von Samizo, Akane, Minohara, Makoto, Kikuchi, Naoto, Ando, Kenta, Mazuka, Yuta, Nishio, Keishi

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Tailoring the Hole Mobility in SnO Films by Modulating the Growth Thermodynamics and Kinetics von Minohara, Makoto, Samizo, Akane, Kikuchi, Naoto, Bando, Kyoko K, Yoshida, Yoshiyuki, Aiura, Yoshihiro

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Site-Selective Oxygen Vacancy Formation Derived from the Characteristic Crystal Structures of Sn–Nb Complex Oxides von Samizo, Akane, Minohara, Makoto, Kikuchi, Naoto, Bando, Kyoko K, Aiura, Yoshihiro, Mibu, Ko, Nishio, Keishi

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Effect of intentional chemical doping on crystallographic and electric properties of the pyrochlore Bi2Sn2O7 von Minohara, Makoto, Kikuchi, Naoto, Tsukuda, Kouhei, Dobashi, Yuka, Samizo, Akane, Nishio, Keishi, He, Xinyi, Katase, Takayoshi, Kamiya, Toshio, Aiura, Yoshihiro

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In-gap state generated by La-on-Sr substitutional defects within the bulk of SrTiO3 von Aiura, Yoshihiro, Ozawa, Kenichi, Tezuka, Yasuhisa, Minohara, Makoto, Samizo, Akane, Bando, Kyoko, Kumigashira, Hiroshi, Mase, Kazuhiko

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Elaboration of near‐valence band defect states leading deterioration of ambipolar operation in SnO thin‐film transistors von Minohara, Makoto, Asanuma, Shutaro, Asai, Hidehiro, Dobashi, Yuka, Samizo, Akane, Tezuka, Yasuhisa, Ozawa, Kenichi, Mase, Kazuhiko, Hase, Izumi, Kikuchi, Naoto, Aiura, Yoshihiro

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Control of Hole Density in Russellite Bi 2 WO 6 via Intentional Chemical Doping von Minohara, Makoto, Dobashi, Yuka, Kikuchi, Naoto, Suzuki, Seiya, Samizo, Akane, Honda, Takashi, Nishio, Keishi, Aiura, Yoshihiro

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Control of Hole Density in Russellite Bi2WO6 via Intentional Chemical Doping von Minohara, Makoto, Dobashi, Yuka, Kikuchi, Naoto, Suzuki, Seiya, Samizo, Akane, Honda, Takashi, Nishio, Keishi, Aiura, Yoshihiro

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Disorders and oxygen vacancies in p‐type Sn 2 B 2 O 7 (B = Nb, Ta): Role of the B‐site element von Samizo, Akane, Minohara, Makoto, Kikuchi, Naoto, Ando, Kenta, Mazuka, Yuta, Nishio, Keishi

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Material design using calculation phase diagram for refractory high‐entropy ceramic matrix composites von Arai, Yutaro, Saito, Manami, Samizo, Akane, Inoue, Ryo, Nishio, Keishi, Kogo, Yasuo

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Carrier Generation in p-Type Wide-Gap Oxide: SnNb 2 O 6 Foordite von Samizo, Akane, Kikuchi, Naoto, Aiura, Yoshihiro, Nishio, Keishi, Mibu, Ko

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Bipolar Semiconducting Properties in α‑SnWO4 Based on the Characteristic Defect Structure von Minohara, Makoto, Dobashi, Yuka, Kikuchi, Naoto, Samizo, Akane, Tsukuda, Kouhei, Nishio, Keishi, Mibu, Ko, Kumigashira, Hiroshi, Hase, Izumi, Yoshida, Yoshiyuki, Aiura, Yoshihiro

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Double Charge Polarity Switching in Sb‐Doped SnSe with Switchable Substitution Sites von Yamamoto, Chihiro, He, Xinyi, Katase, Takayoshi, Ide, Keisuke, Goto, Yosuke, Mizuguchi, Yoshikazu, Samizo, Akane, Minohara, Makoto, Ueda, Shigenori, Hiramatsu, Hidenori, Hosono, Hideo, Kamiya, Toshio

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In-gap state generated by La-on-Sr substitutional defects within the bulk of SrTiO 3 von Aiura, Yoshihiro, Ozawa, Kenichi, Tezuka, Yasuhisa, Minohara, Makoto, Samizo, Akane, Bando, Kyoko, Kumigashira, Hiroshi, Mase, Kazuhiko

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In-gap state generated by La-on-Sr substitutional defects within the bulk of SrTiO von Aiura, Yoshihiro, Ozawa, Kenichi, Tezuka, Yasuhisa, Minohara, Makoto, Samizo, Akane, Bando, Kyoko, Kumigashira, Hiroshi, Mase, Kazuhiko

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Bipolar Semiconducting Properties in α-SnWO 4 Based on the Characteristic Defect Structure von Minohara, Makoto, Dobashi, Yuka, Kikuchi, Naoto, Samizo, Akane, Tsukuda, Kouhei, Nishio, Keishi, Mibu, Ko, Kumigashira, Hiroshi, Hase, Izumi, Yoshida, Yoshiyuki, Aiura, Yoshihiro

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Disappearance of Localized Valence Band Maximum of Ternary Tin Oxide with Pyrochlore Structure, Sn2Nb2O7 von Aiura, Yoshihiro, Ozawa, Kenichi, Hase, Izumi, Bando, Kyoko, Haga, Hiroto, Kawanaka, Hirofumi, Samizo, Akane, Kikuchi, Naoto, Mase, Kazuhiko

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Carrier generation in a p -type oxide semiconductor: Sn 2 ( Nb 2 − x Ta x ) O 7 von Kikuchi, Naoto, Samizo, Akane, Ikeda, Shintaro, Aiura, Yoshihiro, Mibu, Ko, Nishio, Keishi

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Disappearance of Localized Valence Band Maximum of Ternary Tin Oxide with Pyrochlore Structure, Sn 2 Nb 2 O 7 von Aiura, Yoshihiro, Ozawa, Kenichi, Hase, Izumi, Bando, Kyoko, Haga, Hiroto, Kawanaka, Hirofumi, Samizo, Akane, Kikuchi, Naoto, Mase, Kazuhiko

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