Electron trapping in HfO2 layer deposited over a HF last treated silicon substrate von Sambuco Salomone, L., Cassani, M.V., Garcia-Inza, M., Carbonetto, S., Redin, E., Campabadal, F., Faigón, A.

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Numerical modeling of total dose effects on CD4007 MOSFET during switched-bias irradiation von Sambuco Salomone, L., Garcia-Inza, M., Lipovetzky, J., Cassani, M.V., Redin, E., Faigón, A., Carbonetto, S.

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Modeling Switched Bias Irradiations on Floating Gate Devices: Application to Dosimetry von Sambuco Salomone, L., Garcia-Inza, M., Carbonetto, S., Lipovetzky, J., Redin, E., Faigon, A.

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Numerical Modeling of Oxide and Interface Charge Buildup in Field Oxide Transistors During Irradiation and Annealing von Gomes, E. N., Garcia Cozzi, R., Garcia-Inza, M., Carbonetto, S., Cassani, M. V., Redin, E., Faigon, A., Sambuco Salomone, L.

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From pediatric to adult care: a survey on the transition process in type 1 diabetes mellitus and the diabetes services in Italy von Graziani, Vanna, Suprani, Tosca, Di Bartolo, Paolo, Marchetti, Federico

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Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications von Sambuco Salomone, L., Lipovetzky, J., Carbonetto, S. H., García Inza, M. A., Redin, E. G., Campabadal, F., Faigón, A.

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Experimental characterization and numerical modeling of total ionizing dose effects on field oxide MOS dosimeters von Cassani, M.V., Sambuco Salomone, L., Carbonetto, S., Faigón, A., Redin, E., Garcia-Inza, M.

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Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter von Sambuco Salomone, L., Holmes-Siedle, A., Faigón, A.

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Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications von García, H., González, M. B., Mallol, M. M., Castán, H., Dueñas, S., Campabadal, F., Acero, M. C., Sambuco Salomone, L., Faigón, A.

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Switched Bias Differential MOSFET Dosimeter von Garcia-Inza, M., Carbonetto, S., Lipovetzky, J., Carra, M. J., Sambuco Salomone, L., Redin, E. G., Faigon, A.

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Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors von Salomone, L. Sambuco, Lipovetzky, J., Carbonetto, S.H., García Inza, M.A., Redin, E.G., Campabadal, F., Faigón, A.

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CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs von Carbonetto, S., GarcianInza, M., Lipovetzky, J., Carra, M. J., Redin, E., Sambuco Salomone, L., Faigon, A.

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Histamine regulates pancreatic carcinoma cell growth through H3 and H4 receptors von Cricco, G. P., Mohamad, N. A., Sambuco, L. A., Genre, F., Croci, M., Gutiérrez, A. S., Medina, V. A., Bergoc, R. M., Rivera, E. S., Martín, G. A.

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Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes von Lipovetzky, J., Garcia-Inza, M. A., Carbonetto, S., Carra, M. J., Redin, E., Sambuco Salomone, L., Faigon, A.

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Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures von Sambuco Salomone, L., Kasulin, A., Lipovetzky, J., Carbonetto, S. H., Garcia-Inza, M. A., Redin, E. G., Berbeglia, F., Campabadal, F., Faigón, A.

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Effect of histamine on the expression of metalloproteinases and cell adhesion in breast cancer cell lines von Genre, F., Valli, E., Medina, V., Gutiérrez, A., Sambuco, L., Rivera, E., Cricco, G., Martín, G.

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Electron trapping in amorphous Al2O3 von Sambuco Salomone, L., Campabadal, F., Faigón, A.

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Numerical modeling of radiation-induced charge neutralization in MOS devices von Sambuco Salomone, L., Garcia-Inza, M., Carbonetto, S., Lipovetzky, J., Redin, E., Faigón, A.

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Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current von García Cozzi, R., Redín, E., Garcia–Inza, M., Sambuco Salomone, L., Faigón, A., Carbonetto, S.

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Numerical Modeling of MOS Dosimeters Under Switched Bias Irradiations von Sambuco Salomone, L., Faigon, A., Redin, E. G.

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