Processing of photonic crystal nanocavity for quantum information in diamond von Bayn, Igal, Meyler, Boris, Lahav, Alex, Salzman, Joseph, Kalish, Rafi, Fairchild, Barbara A., Prawer, Steven, Barth, Michael, Benson, Oliver, Wolf, Thomas, Siyushev, Petr, Jelezko, Fedor, Wrachtrup, Jorg

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Triangular nanobeam photonic cavities in single-crystal diamond von Bayn, Igal, Meyler, Boris, Salzman, Joseph, Kalish, Rafi

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Properties of carbon-doped GaN von Tang, H., Webb, J. B., Bardwell, J. A., Raymond, S., Salzman, Joseph, Uzan-Saguy, C.

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Ultra high-Q photonic crystal nanocavity design: the effect of a low-epsilon slab material von Bayn, Igal, Salzman, Joseph

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The electrostatics of Ta2O5 in Si-based metal oxide semiconductor devices von Kornblum, Lior, Meyler, Boris, Salzman, Joseph, Eizenberg, Moshe

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Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices von Recher, Shani, Yalon, Eilam, Ritter, Dan, Riess, Ilan, Salzman, Joseph

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Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length von Lee, Jonathan, Flitsiyan, Elena, Chernyak, Leonid, Yang, Jiancheng, Ren, Fan, Pearton, Stephen J., Meyler, Boris, Salzman, Y. Joseph

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Effects of Gamma Irradiation on AlGaN-Based High Electron Mobility Transistors von Lee, Jonathan, Flitsiyan, Elena, Chernyak, Leonid, Salzman, Joseph, Meyler, Boris

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Ion-Beam-Assisted Lift-Off Technique for Three-Dimensional Micromachining of Freestanding Single-Crystal Diamond von Olivero, P., Rubanov, S., Reichart, P., Gibson, B. C., Huntington, S. T., Rabeau, J., Greentree, A. D., Salzman, J., Moore, D., Jamieson, D. N., Prawer, S.

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Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si metal oxide semiconductor devices von Kornblum, Lior, Meyler, Boris, Cytermann, Catherine, Yofis, Svetlana, Salzman, Joseph, Eizenberg, Moshe

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Effect of dielectric constant tuning on a photonic cavity frequency and Q-factor von Shlafman, Michael, Bayn, Igal, Salzman, Joseph

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Electron mobility in an AlGaN/GaN two-dimensional electron gas. I. Carrier concentration dependent mobility von Katz, O., Horn, A., Bahir, G., Salzman, J.

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Optical Signature of the Electron Injection in Ga2O3 von Lee, Jonathan, Flitsiyan, Elena, Chernyak, Leonid, Ahn, Shihyun, Ren, Fan, Yuna, Lin, Pearton, Stephen J., Kim, Jihyun, Meyler, Boris, Salzman, Joseph

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Investigation of the band offsets caused by thin Al 2 O 3 layers in HfO 2 based Si metal oxide semiconductor devices von Kornblum, Lior, Meyler, Boris, Cytermann, Catherine, Yofis, Svetlana, Salzman, Joseph, Eizenberg, Moshe

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Cathodoluminescence Studies of Gamma-Irradiation Effects on AlGaN/GaN High Electron Mobility Transistors (HEMTs) von Yadav, Anupama, Antia, Michael, Flitsiyan, Elena, Chernyak, Leonid, Lubomirsky, Igor, Salzman, Joseph

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Optical Signature of the Electron Injection in Ga 2 O 3 von Lee, Jonathan, Flitsiyan, Elena, Chernyak, Leonid, Ahn, Shihyun, Ren, Fan, Yuna, Lin, Pearton, Stephen J., Kim, Jihyun, Meyler, Boris, Salzman, Joseph

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Characteristics of InxAl1-xN-GaN high-electron mobility field-effect transistor von KATZ, Oded, MISTELE, David, MEYLER, Boris, BAHIR, Gad, SALZMAN, Joseph

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Lateral and longitudinal coupled waveguides in semiconductor lasers von Skorka, Orit, Salzman, Joseph

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Ultra-high-Q triangular cross-section nanobeam photonic cavities in single crystal diamond von Bayn, Igal, Meyler, Boris, Salzman, Joseph, Kalish, Rafi

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Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and their Interfaces von Yalon, Eilam, Gavrilov, Arkadi, Cohen, Shimon, Mistele, David, Mikhelashvili, Vissarion, Meyler, Boris, Salzman, Joseph, Ritter, Dan

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