Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates von Hoke, W. E., Kennedy, T. D., LaRoche, J. R., Torabi, A., Bettencourt, J. P., Saledas, P., Lee, C. D., Lyman, P. S., Kazior, T. E., Bulsara, M. T., Fitzgerald, E. A., Lubyshev, D., Liu, W. K.

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High gain, pulsed power AlGaAs/GaAs HBTs von JACKSON, G, STRUBLE, W, ADLERSTEIN, M, SHANFIELD, S, COBB, M, ZAITLIN, M, TONG, E, PUCEL, R, SALEDAS, P

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An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications von Huang, J.C., Jackson, G.S., Shanfield, S., Platzker, A., Saledas, P.K., Weichert, C.

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Ka-band GaAs HBT PIN diode switches and phase shifters von Teeter, D., Wohlert, R., Cole, B., Jackson, G., Tong, E., Saledas, P., Adlerstein, M., Schindler, M., Shanfield, S.

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A high-gain, low-noise 1/2- mu m pulse-doped pseudomorphic HEMT von Huang, J.C., Zaitlin, M., Hoke, W., Adlerstein, M., Lyman, P., Saledas, P., Jackson, G., Tong, E., Flynn, G.

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Ka-band GaAs HBT PIN diode switches and phase shifters von Teeter, D., Wohlert, R., Cole, B., Jackson, G., Tong, E., Saledas, P., Adlerstein, M., Schindler, M., Shanfield, S.

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An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for < e1 > X < /e1 > - and < e1 > Ku < /e1 > -band power applications von Huang, J C, Jackson, G S, Shanfield, S, Platzker, A, Saledas, P K, Weichert, C

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High gain, pulsed power [formula omitted] HBTs von Jackson, G, Struble, W, Adlerstein, M, Shanfield, S, Cobb, M, Zaitlin, M, Tong, E, Pucel, R, Saledas, P

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A double-recessed Al(0.24)GaAs/In(0.16)GaAs pseudomorphic HEMT for Ka- and Q-band power applications von HUANG, JOHNC, SALEDAS, P, Wendler, John, Platzker, Aryeh, Boulais, W, Shanfield, Stanley, Hoke, W, Lyman, P, Aucoin, L, MIQUELARENA, A

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A double-recessed Al(0.24)GaAs/In(0.16)GaAspseudomorphic HEMT for < e1 > Ka < /e1 > -and Q -band power applications von Huang, J C, Saledas, P, Wendler, J, Platzker, A, Boulais, W, Shanfield, S, Hoke, W, Lyman, P, Aucoin, L, Miquelarena, A, Bedard, C, Atwood, D

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A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications von Huang, J.C., Saledas, P., Wendler, J., Platzker, A., Boulais, W., Shanfield, S., Hoke, W., Lyman, P., Aucoin, L., Miquelarena, A., Bedard, C., Atwood, D.

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A double-recessed Al0.24GaAs/In0.16GaAs pseudomorphic HEMT for Ka- and Q-band power applications von HUANG, J. C, SALEDAS, P, BEDARD, C, ATWOOD, D, WENDLER, J, PLATZKER, A, BOULAIS, W, SHANFIELD, S, HOKE, W, LYMAN, P, AUCOIN, L, MIQUELARENA, A

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An AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for X- and Ku-band power applications von Huang, J.C., Jackson, G., Shanfield, S., Hoke, W., Lyman, P., Atwood, D., Saledas, P., Schindler, M., Tajima, Y., Platzker, A., Masse, D., Statz, H.

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