Inelastic electron tunneling spectrometer to characterize metal–oxide–semiconductor devices with ultrathin oxides von Petit, C., Salace, G.

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Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical str... von Petit, C., Salace, G., Vuillaume, D.

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Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal–oxide–semiconductor devices von Salace, G., Petit, C., Vuillaume, D.

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Fowler–Nordheim conduction in polysilicon (n+)-oxide–silicon (p) structures: Limit of the classical treatment in the barrier height determination von Hadjadj, A., Salace, G., Petit, C.

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Inelastic tunneling spectra of an alkyl self-assembled monolayer using a MOS tunnel junction as a test-bed von Petit, C., Salace, G., Lenfant, S., Vuillaume, D.

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Role of interfaces on the direct tunneling and the inelastic tunneling behaviors through metal/alkylsilane/silicon junctions von Aswal, D. K., Petit, C., Salace, G., Guérin, D., Lenfant, S., Yakhmi, J. V., Vuillaume, D.

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Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n+)–oxide–silicon (p) structures: Effect of the oxide thickness von Salace, G., Hadjadj, A., Petit, C., Jourdain, M.

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Inelastic electron tunnelling spectroscopy in N-MOS junctions with ultra-thin gate oxide von Petit, C, Salace, G, Vuillaume, D

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STM observation of the electro-adsorption of lithium ions onto graphite and of the ensuing solid electrolyte interphase formation von Zhu, L, Hommet, F, Salace, G, Claude-Montigny, B, Métrot, A

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Electronic properties of organic monolayers and molecular devices von Vuillaume, D, Lenfant, S, Guerin, D, Delerue, C, Petit, C, Salace, G

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Bidirectional stress on a p-metal–oxide–silicon capacitor von Ziane, Dj, El-Hdiy, A., Salace, G.

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The image force effect on the barrier height in MOS structures: correlation of the corrected barrier height with temperature and the oxide thickness von Salace, G, Hadjadj, A, Petit, C, Ziane, Dj

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Charging effects of MgO under electron bombardment and nonohmic behavior of the induced specimen current von CAZAUX, J, KIM, K. H, IBARA, O, SALACE, G

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On the decay of the trapped holes and the slow states in metal–oxide–semiconductor capacitors von Meinertzhagen, A., Petit, C., Yard, G., Jourdain, M., Salace, G.

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Stress field polarity effect on defects generation in thin silicon dioxide films von El-Hdiy, A., Salace, G., Jourdain, M., Meinertzhagen, A., Vuillaume, D.

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Aluminum, oxide and silicon phonons by IETS on MOS tunnel junctions : accurate determination and effect of electrical stress von Petit, C., Salace, G., Vuillaume, D.

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Irradiation effects on the high field behaviour of very thin silica layers von Aassime, A, Sarrabayrouse, G.J, Salace, G, Petit, C

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Comparison of the generated oxide charge by injection of electrons for both polarities von Meinertzhagen, A., Yard, G., Petit, C., Jourdain, M., El-Hdiy, A., Salace, G., Reimbold, G.

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Study of thin anodic SiO2 layers on degenerate silicon by inelastic electron tunnelling spectroscopy von SALACE, G, DESPUJOLS, J

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Relaxation of interface states and positive charge in thin gate oxide after Fowler-Nordheim stress von EL HDIY, A, SALACE, G, PETIT, C, JOURDAIN, M, MEINERTZHAGEN, A

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