Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing von Bockowski, Michal

Volltext

Progress on and challenges of p-type formation for GaN power devices von Narita, Tetsuo, Yoshida, Hikaru, Tomita, Kazuyoshi, Kataoka, Keita, Sakurai, Hideki, Horita, Masahiro, Bockowski, Michal, Ikarashi, Nobuyuki, Suda, Jun, Kachi, Tetsu, Tokuda, Yutaka

Volltext

Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing von Narita, Tetsuo, Sakurai, Hideki, Bockowski, Michal, Kataoka, Keita, Suda, Jun, Kachi, Tetsu

Volltext

Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis von Iwata, Kenji, Sakurai, Hideki, Arai, Shigeo, Nakashima, Takuya, Narita, Tetsuo, Kataoka, Keita, Bockowski, Michal, Nagao, Masaharu, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki

Volltext

Mg-implanted bevel edge termination structure for GaN power device applications von Matys, Maciej, Ishida, Takashi, Nam, Kyung Pil, Sakurai, Hideki, Narita, Tetsuo, Uesugi, Tsutomu, Bockowski, Michal, Suda, Jun, Kachi, Tetsu

Volltext

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam von Uedono, Akira, Sakurai, Hideki, Narita, Tetsuo, Sierakowski, Kacper, Bockowski, Michal, Suda, Jun, Ishibashi, Shoji, Chichibu, Shigefusa F., Kachi, Tetsu

Volltext

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation von Uedono, Akira, Sakurai, Hideki, Uzuhashi, Jun, Narita, Tetsuo, Sierakowski, Kacper, Ishibashi, Shoji, Chichibu, Shigefusa F., Bockowski, Michal, Suda, Jun, Ohkubo, Tadakatsu, Ikarashi, Nobuyuki, Hono, Kazuhiro, Kachi, Tetsu

Volltext

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing von Uzuhashi, Jun, Chen, Jun, Kumar, Ashutosh, Yi, Wei, Ohkubo, Tadakatsu, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Sierakowski, Kacper, Bockowski, Michal, Sakurai, Hideki, Kachi, Tetsu, Sekiguchi, Takashi, Hono, Kazuhiro

Volltext

High Pressure Processing of Ion Implanted GaN von Sierakowski, Kacper, Jakiela, Rafal, Lucznik, Boleslaw, Kwiatkowski, Pawel, Iwinska, Malgorzata, Turek, Marcin, Sakurai, Hideki, Kachi, Tetsu, Bockowski, Michal

Volltext

Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing von Sakurai, Hideki, Narita, Tetsuo, Omori, Masato, Yamada, Shinji, Koura, Akihiko, Iwinska, Malgorzata, Kataoka, Keita, Horita, Masahiro, Ikarashi, Nobuyuki, Bockowski, Michal, Suda, Jun, Kachi, Tetsu

Volltext

Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching von Yamada, Shinji, Omori, Masato, Sakurai, Hideki, Osada, Yamato, Kamimura, Ryuichiro, Hashizume, Tamotsu, Suda, Jun, Kachi, Tetsu

Volltext

Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing von Hirukawa, Kazufumi, Sumida, Kensuke, Sakurai, Hideki, Fujikura, Hajime, Horita, Masahiro, Otoki, Yohei, Sierakowski, Kacper, Bockowski, Michal, Kachi, Tetsu, Suda, Jun

Volltext

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation von Kano, Emi, Kataoka, Keita, Uzuhashi, Jun, Chokawa, Kenta, Sakurai, Hideki, Uedono, Akira, Narita, Tetsuo, Sierakowski, Kacper, Bockowski, Michal, Otsuki, Ritsuo, Kobayashi, Koki, Itoh, Yuta, Nagao, Masahiro, Ohkubo, Tadakatsu, Hono, Kazuhiro, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki

Volltext

X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN von Akazawa, Masamichi, Wu, Encheng, Sakurai, Hideki, Bockowski, Michal, Narita, Tetsuo, Kachi, Tetsu

Volltext

Depth profiling of surface damage in n-type GaN induced by inductively coupled plasma reactive ion etching using photo-electrochemical techniques von Yamada, Shinji, Takeda, Kentaro, Toguchi, Masachika, Sakurai, Hideki, Nakamura, Toshiyuki, Suda, Jun, Kachi, Tetsu, Sato, Taketomo

Volltext

Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient von Sumida, Kensuke, Hirukawa, Kazufumi, Sakurai, Hideki, Sierakowski, Kacper, Horita, Masahiro, Bockowski, Michal, Kachi, Tetsu, Suda, Jun

Volltext

Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration von Nakashima, Takuya, Kano, Emi, Kataoka, Keita, Arai, Shigeo, Sakurai, Hideki, Narita, Tetsuo, Sierakowski, Kacper, Bockowski, Michal, Nagao, Masahiro, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki

Volltext

Current development status of iBNCT001, demonstrator of a LINAC-based neutron source for BNCT von Kumada, Hiroaki, Li, Yinuo, Yasuoka, Kiyoshi, Naito, Fujio, Kurihara, Toshikazu, Sugimura, Takashi, Sato, Masaharu, Matsumoto, Yoshitaka, Matsumura, Akira, Sakurai, Hideki, Sakae, Takeji

Volltext

Amphiphilic polysilane-methacrylate block copolymers: Formation and interesting properties von SAKURAI, Hideki

Volltext

Preparation of Nanometer-Sized Hollow Particles by Photochemical Degradation of Polysilane Shell Cross-Linked Micelles and Reversible Encapsulation of Guest Molecules von Sanji, Takanobu, Nakatsuka, Yuriko, Ohnishi, Satomi, Sakurai, Hideki

Volltext