Computational Efficiency of a Modular Reservoir Network for Image Recognition von Dai, Yifan, Yamamoto, Hideaki, Sakuraba, Masao, Sato, Shigeo

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Effects of interfacial chemical states on the performance of perovskite solar cells von Ma, Teng, Tadaki, Daisuke, Sakuraba, Masao, Sato, Shigeo, Hirano-Iwata, Ayumi, Niwano, Michio

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Learning Rule for a Quantum Neural Network Inspired by Hebbian Learning von OSAKABE, Yoshihiro, SATO, Shigeo, AKIMA, Hisanao, KINJO, Mitsunaga, SAKURABA, Masao

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Amphiphobic Septa Enhance the Mechanical Stability of Free-Standing Bilayer Lipid Membranes von Yamaura, Daichi, Tadaki, Daisuke, Araki, Shun, Yoshida, Miyu, Arata, Kohei, Ohori, Takeshi, Ishibashi, Ken-ichi, Kato, Miki, Ma, Teng, Miyata, Ryusuke, Yamamoto, Hideaki, Tero, Ryugo, Sakuraba, Masao, Ogino, Toshio, Niwano, Michio, Hirano-Iwata, Ayumi

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Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating von Ueno, Naofumi, Sakuraba, Masao, Murota, Junichi, Sato, Shigeo

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Silicon-Carbon alloy film formation on Si(100) using SiH4 and CH4 reaction under low-energy ECR Ar plasma irradiation von Sasaki, Shogo, Sakuraba, Masao, Akima, Hisanao, Sato, Shigeo

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Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating von Sakuraba, Masao, Sugawara, Katsutoshi, Nosaka, Takayuki, Akima, Hisanao, Sato, Shigeo

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Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating von Ueno, Naofumi, Sakuraba, Masao, Osakabe, Yoshihiro, Akima, Hisanao, Sato, Shigeo

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Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode von Kawashima, Tomoyuki, Sakuraba, Masao, Murota, Junichi

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Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating von Abe, Yusuke, Sakuraba, Masao, Murota, Junichi

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Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating von Motegi, Koya, Ueno, Naofumi, Sakuraba, Masao, Osakabe, Yoshihiro, Akima, Hisanao, Sato, Shigeo

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Quantum Associative Memory with Quantum Neural Network via Adiabatic Hamiltonian Evolution von OSAKABE, Yoshihiro, AKIMA, Hisanao, SAKURABA, Masao, KINJO, Mitsunaga, SATO, Shigeo

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Behavior of N atoms after thermal nitridation of Si1−xGex surface von Kawashima, Tomoyuki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi

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Surface Reaction in Thin Film Formation of Si1－xGex Alloys on Si(100) by Electron-Cyclotron-Resonance Ar Plasma Chemical Vapor Deposition without Substrate Heating von Ueno, Naofumi, Sakuraba, Masao, Sato, Shigeo

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(Invited) Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing von Sakuraba, Masao, Murota, Junichi

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CMOS Majority Circuit with Large Fan-In von AKIMA, Hisanao, KATAYAMA, Yasuhiro, SAKURABA, Masao, NAKAJIMA, Koji, MADRENAS, Jordi, SATO, Shigeo

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Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD von Nosaka, Takayuki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi

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Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD von Sakuraba, Masao, Muto, Daisuke, Mori, Masaki, Sugawara, Katsutoshi, Murota, Junichi

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Hydrogen Atom Desorption Induced by Electron Bombardment on Si Surface von Li, Wu, Sato, Shigeo, Akima, Hisanao, Sakuraba, Masao

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Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition von Tanno, Hiroki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi

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