Development of compact inductive energy storage pulsed-power generator driven by 13 kV SiC-MOSFET von Takahashi, Katsuyuki, Saito, Ryo, Onodera, Taichiro, Takaki, Koichi, Kitai, Hidenori, Sakamoto, Kunihiro

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Study of SiC device for pulsed power switching circuit von Tagawa, Toru, Yamashita, Tomohiko, Sakugawa, Takashi, Katsuki, Sunao, Hukuda, Kenzi, Sakamoto, Kunihiro

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Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement von Shiomi, Hiromu, Sakamoto, Kunihiro, Kitai, Hidenori, Kojima, Kazutoshi, Yamasaki, Kimiyoshi, Okumura, Hajime, Takagi, Shin-Ichi, Tsujimura, Masatoshi, Fukuda, Kenji

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Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm von Matsukawa, T., Liu, Y., O'uchi, S., Endo, K., Tsukada, J., Yamauchi, H., Ishikawa, Y., Ota, H., Migita, S., Morita, Y., Mizubayashi, W., Sakamoto, K., Masahara, M.

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Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and von Shiomi, Hiromu, Kitai, Hidenori, Tsujimura, Masatoshi, Kiuchi, Yuji, Nakata, Daisuke, Ono, Shuichi, Kojima, Kazutoshi, Fukuda, Kenji, Sakamoto, Kunihiro, Yamasaki, Kimiyohi, Okumura, Hajime

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Opportunities and strategies for increasing bus ridership in rural Japan: A case study of Hidaka City von Santoso, Djoen San, Yajima, Masaru, Sakamoto, Kunihiro, Kubota, Hisashi

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Variability Analysis of Scaled Crystal Channel and Poly-Si Channel FinFETs von Yongxun Liu, Kamei, T., Matsukawa, T., Endo, K., O'uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Hayashida, T., Sakamoto, K., Ogura, A., Masahara, M.

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Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition von Endo, Kazuhiko, Ishikawa, Yuki, Matsukawa, Takashi, Liu, Yongxum, O’uchi, Shin-ichi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku

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Atomic Layer Deposition of SiO2 for the Performance Enhancement of Fin Field Effect Transistors von Endo, Kazuhiko, Ishikawa, Yuki, Matsukawa, Takashi, Liu, Yongxun, O'uchi, Shin-ichi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku

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SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System von IGARASHI, Yasushi, CHIBA, Tadashi, O'UCHI, Shin-ichi, MASAHARA, Meishoku, SAKAMOTO, Kunihiro

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Efficacy of bus service reorganization utilizing a hub-and-spoke topology and DRT to meet community needs: A case study of Tokigawa town von Yajima, Masaru, Sakamoto, Kunihiro, Kubota, Hisashi

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Variability Analysis of TiN FinFET SRAM Cells and Its Compensation by Independent-DG FinFETs von Endo, Kazuhiko, O'uchi, Shin-ichi, Ishikawa, Yuki, Yongxun Liu, Matsukawa, Takashi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku

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Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transi... von Liu, Yongxun, Kamei, Takahiro, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Hayashida, Tetsuro, Ishikawa, Yuki, Matsukawa, Takashi, Sakamoto, Kunihiro, Ogura, Atsushi, Masahara, Meishoku

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Trip Characteristics of Commuters Accessing Rail Transit by Considering Distance and Slope with Integration of Public Bus as a Feeder von SANTOSO, Djoen San, SAKAMOTO, Kunihiro, YAJIMA, Masaru, KUBOTOA, Hisashi

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Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistor Extension Doping von Liu, Yongxun, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinich, Sakamoto, Kunihiro, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Masahara, Meishoku

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Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories von Liu, Yongxun, Kamei, Takahiro, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Hayashida, Tetsuro, Sakamoto, Kunihiro, Ogura, Atsushi, Masahara, Meishoku

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Encapsulation of atomic-scale bi wires in epitaxial silicon without loss of structure von SAKATA, Osami, YASHIRO, Wataru, BOWLER, D. R, KITANO, Akiko, SAKAMOTO, Kunihiro, MIKI, Kazushi

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A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Tr... von Hayashida, Tetsuro, Liu, Yongxun, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinich, Sakamoto, Kunihiro, Ishii, Kenichi, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Suzuki, Eiichi, Ogura, Atsushi, Masahara, Meishoku

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Surface bismuth removal after Bi nanoline encapsulation in silicon von Yagi, Shuhei, Yashiro, Wataru, Sakamoto, Kunihiro, Miki, Kazushi

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High-Frequency Precise Characterization of Intrinsic FinFET Channel von SAKAI, Hideo, O'UCHI, Shinichi, MATSUKAWA, Takashi, ENDO, Kazuhiko, LIU, Yongxun, TSUKADA, Junichi, ISHIKAWA, Yuki, NAKAGAWA, Tadashi, SEKIGAWA, Toshihiro, KOIKE, Hanpei, SAKAMOTO, Kunihiro, MASAHARA, Meishoku, ISHIKURO, Hiroki

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