Structure of defects in silicon oxynitride films von Hasegawa, S., Sakamori, S., Futatsudera, M., Inokuma, T., Kurata, Y.

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Control of oxidation on NiSix during etching and ashing processes von SAKAMORI, S, YONEKURA, K, FUJIWARA, N, KOSAKA, T, OHKUNI, M, TATEIWA, K

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Control of oxidation on NiSi x during etching and ashing processes von Sakamori, S., Yonekura, K., Fujiwara, N., Kosaka, T., Ohkuni, M., Tateiwa, K.

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New method of particle management by high-sensitivity ISPM von Matsui, H., Miyauchi, K., Nagaike, H., Moriya, T., Oshima, C., Hayamizu, T., Sakamori, S., Watanabe, S.

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Reduction in Contact Resistance with In Situ  O 2 Plasma Treatment von Yonekura, Kazumasa, Sakamori, Shigenori, Kawai, Kenji, Miyatake, Hiroshi

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TRANSFORMATION OF DENSE CONTACT HOLES DURING SiO2 ETCHING von Sakamori, S, Fujiwara, N, Miyatake, H, Oikawa, K, Yamanaka, M, Sasaki, T

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Reduction in contact resistance with in situ O2 plasma treatment von YONEKURA, K, SAKAMORI, S, KAWAI, K, MIYATAKE, H

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Reduction Of Electron Shading Damage With Pulse-modulated ECR Plasma von Sakamori, S., Maruyama, T., Fujiwara, N., Miyatake, H., Yoneda, M.

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Effect of Electron Shading on Gate Oxide Degradation von Sakamori, Shigenori, Maruyama, Takahiro, Fujiwara, Nobuo, Miyatake, Hiroshi

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Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching von Yonekura, Kazumasa, Kiritani, Masahide, Sakamori, Shigenori, Yokoi, Takahiro, Fujiwara, Nobuo, Miyatake, Hiroshi

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Investigation of ash damage to ultralow- k inorganic materials von Yonekura, Kazumasa, Sakamori, Shigenori, Goto, Kinya, Matsuura, Masazumi, Fujiwara, Nobuo, Yoneda, Masahiro

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Evaluation of electron shading charge buildup damage using metal-nitride-oxide-silicon capacitors von SAKAMORI, S, MARUYAMA, T, FUJIWARA, N, MIYATAKE, H, YONEDA, M

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Epitaxial growth of metal(CoSi2)/insulator(CaF2) nanometer-thick layered structure on Si(111) von WATANABE, M, MURATAKE, S, FUJIMOTO, H, SAKAMORI, S, ASADA, M, ARAI, S

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Epitaxial growth and electrical conductance of metal(CoSi2)/insulator(CaF2) nanometer-thick layered structures on Si(111) von WATANABE, M, MURATAKE, S, SUEMASU, T, FUJIMOTO, H, SAKAMORI, S, ASADA, M, ARAI, S

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Mechanism of nickel disilicide growth caused by RIE plasma-induced damage on silicon substrate von Kashihara, K., Kihara, K., Yamaguchi, T., Okudaira, T., Tsutsumi, T., Maekawa, K., Sakamori, S., Matsumoto, J., Yokoi, T., Asai, K., Kojima, M.

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Prevention of Cu degradation using in situ N 2 plasma treatment in a dual-damascene process von Tomohisa, Shingo, Yoshikawa, Kazunori, Yonekura, Kazumasa, Sakamori, Shigenori, Fujiwara, Nobuo, Tsujimoto, Kazunori, Nishioka, Kyusaku, Kobayashi, Hiroshi, Oomori, Tatsuo

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En Japonais von TORIYAMA, S, SHIMADA, H, ARAKAWA, H, TAKATA, T, SAKAMORI, S

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Transformation of dense contact holes in oxide etching von Sakamori, S., Fujiwara, N., Miyatake, H., Oikawa, K., Yamanaka, M., Sasaki, T.

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Determination of tributyltin and triphenyltin compounds in industrial waste water by GC von HATTORI, Yukikazu, YAMAMOTO, Hitoshi, NAGAI, Kanji, NONAKA, Kazuyo, HASHIMOTO, Hirokazu, NAKAMURA, Satosi, NAKAMOTO, Masao, ANNEN, Kiyoshi, SAKAMORI, Shigeharu, SHIRAISHI, Hiroaki, MORITA, Masatoshi

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High density embedded DRAM technology with 0.38 /spl mu/m pitch in DRAM and 0.42 /spl mu/m pitch in LOGIC by W/PolySi gate and Cu dual damascene metallization von Takenaka, N., Segawa, M., Uehara, T., Akamatsu, S., Matsumoto, M., Kurimoto, K., Ueda, T., Watanabe, H., Matsutani, T., Yoneda, K., Koshio, A., Kato, Y., Inuishi, M., Oashi, T., Tsukamoto, K., Komori, S., Tomita, K., Inbe, T., Ohsaki, R., Hanawa, T., Sakamori, S., Shirahata, M., Tsuchimoto, J., Eimori, T.

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