Guest Editorial Special Section on EDTM 2022 von Saitoh, Masumi

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Low-power linear computation using nonlinear ferroelectric tunnel junction memristors von Berdan, Radu, Marukame, Takao, Ota, Kensuke, Yamaguchi, Marina, Saitoh, Masumi, Fujii, Shosuke, Deguchi, Jun, Nishi, Yoshifumi

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Comprehensive study of variability in poly-Si channel nanowire transistor von Ota, Kensuke, Kawai, Tomoya, Saitoh, Masumi

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Experimental Study of Random Telegraph Noise in Trigate Nanowire MOSFETs von Ota, Kensuke, Saitoh, Masumi, Tanaka, Chika, Matsushita, Daisuke, Numata, Toshinori

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Threshold Voltage Control by Substrate Bias in 10-nm-Diameter Tri-Gate Nanowire MOSFET on Ultrathin BOX von Ota, K., Saitoh, M., Tanaka, C., Numata, T.

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Toe Clearance Rehabilitative Slippers for Older Adults With Fall Risk: A Randomized Controlled Trial von Satoh, Atsuko, Kudoh, Yukoh, Lee, Sangun, Saitoh, Masumi, Miura, Miwa, Ohnuma, Yuka, Fukushi, Naoki, Sasaki, Hidetada

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Probing spatial heterogeneity in silicon thin films by Raman spectroscopy von Yamazaki, Hideyuki, Koike, Mitsuo, Saitoh, Masumi, Tomita, Mitsuhiro, Yokogawa, Ryo, Sawamoto, Naomi, Tomita, Motohiro, Kosemura, Daisuke, Ogura, Atsushi

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Individual analysis of inter and intragrain defects in electrically characterized polycrystalline silicon nanowire TFTs by multicomponent dark-field imaging based on nanobeam elect... von Asano, Takanori, Takaishi, Riichiro, Oda, Minoru, Sakuma, Kiwamu, Saitoh, Masumi, Tanaka, Hiroki

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Experimental Study of Self-Heating Effects in Trigate Nanowire MOSFETs Considering Device Geometry von Ota, K., Saitoh, M., Tanaka, C., Nakabayashi, Y., Numata, T.

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Experimental study of time-dependent dielectric breakdown in tri-gate nanowire transistor von Ota, Kensuke, Tanaka, Chika, Numata, Toshinori, Matsushita, Daisuke, Saitoh, Masumi

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Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature von Saitoh, Masumi, Hiramoto, Toshiro

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Channel size dependence of low-frequency noise in tri-gate silicon nanowire transistors von Saitoh, Masumi, Ota, Kensuke, Tanaka, Chika, Numata, Toshinori

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Physical mechanism of source and drain resistance reduction for high-performance short-channel InGaZnO thin-film transistors von Ota, Kensuke, Sakuma, Kiwamu, Irisawa, Toshifumi, Tanaka, Chika, Matsushita, Daisuke, Saitoh, Masumi

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Hole mobility enhancement by double-gate mode in ultrathin-body silicon-on-insulator p -type metal-oxide-semiconductor field-effect transistors von Kobayashi, Shigeki, Saitoh, Masumi, Uchida, Ken

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SPICE-Based Performance Analysis of Trigate Silicon Nanowire CMOS Circuits von Tanaka, C., Saitoh, M., Ota, K., Uchida, K., Numata, T.

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Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors von Miyaji, Kousuke, Saitoh, Masumi, Hiramoto, Toshiro

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Large memory window and long charge-retention time in ultranarrow-channel silicon floating-dot memory von Saitoh, Masumi, Nagata, Eiji, Hiramoto, Toshiro

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Physical Origins of Threshold Voltage Variation Enhancement in Si(110) n/pMOSFETs von Saitoh, Masumi, Yasutake, Nobuaki, Nakabayashi, Yukio, Uchida, Ken, Numata, Toshinori

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Experimental study of uniaxial stress effects on Coulomb-limited mobility in p -type metal-oxide-semiconductor field-effect transistors von Kobayashi, Shigeki, Saitoh, Masumi, Nakabayashi, Yukio, Uchida, Ken

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Characteristics of Defect Generation and Breakdown in SiO2 for Polycrystalline Silicon Channel Field-Effect Transistor von Hirano, Izumi, Saitoh, Masumi, Numata, Toshinori, Mitani, Yuichiro

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