Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications von Saito, W., Takada, Y., Kuraguchi, M., Tsuda, K., Omura, I.

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(Pro)renin receptor is associated with angiogenic activity in proliferative diabetic retinopathy von Kanda, A., Noda, K., Saito, W., Ishida, S.

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Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure von Saito, W., Nitta, T., Kakiuchi, Y., Saito, Y., Tsuda, K., Omura, I., Yamaguchi, M.

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High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior von Saito, W., Takada, Y., Kuraguchi, M., Tsuda, K., Omura, I., Ogura, T., Ohashi, H.

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On-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage von Saito, W., Nitta, T., Kakiuchi, Y., Saito, Y., Tsuda, K., Omura, I., Yamaguchi, M.

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Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage von Saito, W., Kuraguchi, M., Takada, Y., Tsuda, K., Omura, I., Ogura, T.

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Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs von Saito, W., Noda, T., Kuraguchi, M., Takada, Y., Tsuda, K., Saito, Y., Omura, I., Yamaguchi, M.

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Breeding of lipoxygenase‐1‐less malting barley variety ‘Satuiku 2 go’ von Hoki, T., Kanatani, R., Saito, W., Iimure, T., Zhou, T.S., Takoi, K., Tanigawa, A., Kihara, M., Ogushi, K.

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Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs von Saito, W., Naka, T.

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Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT von Saito, W., Domon, T., Omura, I., Kuraguchi, M., Takada, Y., Tsuda, K., Yamaguchi, M.

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Early scoliosis surgery may prevent deterioration of respiratory function in Ullrich congenital muscular dystrophy von Kohashi, K, Ishiyama, A, Takeshita, E, Shimizu-Motohashi, Y, Saito, T, Nakagawa, E, Komaki, H, Sugai, K, Nishino, I, Saito, W, Takaso, M, Sasaki, M

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Expression of erythropoietin receptor in human epiretinal membrane of proliferative diabetic retinopathy von Kase, Satoru, Saito, Wataru, Ohgami, Kazuhiro, Yoshida, Kazuhiko, Furudate, Naoki, Saito, Akari, Yokoi, Masahiko, Kase, Manabu, Ohno, Shigeaki

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UIS test of high-voltage GaN-HEMTs with p-type gate structure von Saito, W., Naka, T.

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High breakdown Voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application von Saito, W., Kuraguchi, M., Takada, Y., Tsuda, K., Omura, I., Ogura, T.

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A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT von Saito, W., Nitta, T., Kakiuchi, Y., Saito, Y., Tsuda, K., Omura, I., Yamaguchi, M.

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In vivo measurements of daily UV exposure of human anterior teeth using CaF2:Tb,Sm as a thermoluminescence dosimeter von SAITO, W, IKEJIMA, I, FUKUDA, Y, MOMOI, Y

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Elevations of AGE and vascular endothelial growth factor with decreased total antioxidant status in the vitreous fluid of diabetic patients with retinopathy von Yokoi, M, Yamagishi, S-i, Takeuchi, M, Ohgami, K, Okamoto, T, Saito, W, Muramatsu, M, Imaizumi, T, Ohno, S

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High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process von Saito, W., Omura, I., Aida, S., Koduki, S., Izumisawa, M., Yoshioka, H., Ogura, T.

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Expression of glutamine synthetase and cell proliferation in human idiopathic epiretinal membrane von Kase, S, Saito, W, Yokoi, M, Yoshida, K, Furudate, N, Muramatsu, M, Saito, A, Kase, M, Ohno, S

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21pCF-1 Development of the FVTX high multiplicity trigger system for the PHENIX experiment von Nagashima, T., Fukushima, Y., Hasegawa, S., Nakagawa, I., Saito, W., Group, the PHENIX FVTX

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