Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells von Krishtopenko, S. S., Ikonnikov, A. V., Orlita, M., Sadofyev, Yu. G., Goiran, M., Teppe, F., Knap, W., Gavrilenko, V. I.

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Growth of high-quality ZnMgO epilayers and ZnO∕ZnMgO quantum well structures by radical-source molecular-beam epitaxy on sapphire von Sadofev, S., Blumstengel, S., Cui, J., Puls, J., Rogaschewski, S., Schäfer, P., Sadofyev, Yu. G., Henneberger, F.

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Cyclotron resonance study in InAs/AlSb quantum well heterostructures with two occupied electronic subbands von Krishtopenko, S. S., Ikonnikov, A. V., Maremyanin, A. V., Spirin, K. E., Gavrilenko, V. I., Sadofyev, Yu G., Goiran, M., Sadowsky, M., Vasilyev, Yu B.

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Rashba spin splitting and exchange enhancement of the g factor in InAs/AlSb heterostructures with a two-dimensional electron gas von Krishtopenko, S. S., Kalinin, K. P., Gavrilenko, V. I., Sadofyev, Yu. G., Goiran, M.

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Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers von Sadofyev, Yu. G., Martovitsky, V. P., Klekovkin, A. V., Saraykin, V. V., Vasil’evskii, I. S.

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Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy von Sadofyev, Yu. G., Martovitsky, V. P., Bazalevsky, M. A., Klekovkin, A. V., Averyanov, D. V., Vasil’evskii, I. S.

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Investigation of the thermal stability of metastable GeSn epitaxial layers von Martovitsky, V. P., Sadofyev, Yu. G., Klekovkin, A. V., Saraikin, V. V., Vasil’evskii, I. S.

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Cyclotron resonance in InAs/AlSb quantum wells in magnetic fields up to 45 T von Spirin, K. E., Krishtopenko, S. S., Sadofyev, Yu. G., Drachenko, O., Helm, M., Teppe, F., Knap, W., Gavrilenko, V. I.

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Features of the persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells and a tunneling-transparent barrier von Spirin, K. E., Kalinin, K. P., Krishtopenko, S. S., Maremyanin, K. V., Gavrilenko, V. I., Sadofyev, Yu. G.

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Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy von Teterin, P. E., Averyanov, D. V., Sadofyev, Yu. G., Parfenov, O. E., Likhachev, I. A., Storchak, V. G.

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Study of methods for lowering the lasing frequency of a terahertz quantum-cascade laser based on two quantum wells von Ushakov, D. V., Sadofyev, Yu. G., Samal, N.

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Large g -factor enhancement in high-mobility InAs/AlSb quantum wells von Sadofyev, Yu. G., Ramamoorthy, A., Naser, B., Bird, J. P., Johnson, S. R., Zhang, Y.-H.

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Structural and optical studies of strain relaxation in Ge1−xSnx layers grown on Ge/Si(001) by molecular beam epitaxy von Nikolenko, A.S., Strelchuk, V.V., Safriuk, N.V., Kryvyi, S.B., Kladko, V.P., Oberemok, O.S., Borkovska, L.V., Sadofyev, Yu.G.

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Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells von Gavrilenko, V. I., Ikonnikov, A. V., Krishtopenko, S. S., Lastovkin, A. A., Marem’yanin, K. V., Sadofyev, Yu. G., Spirin, K. E.

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Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods von Morozov, S. V., Kryzhkov, D. I., Gavrilenko, V. I., Yablonsky, A. N., Kuritsyn, D. I., Gaponova, D. M., Sadofyev, Yu. G., Zvonkov, B. N., Vihrova, O. V.

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Diagnostics of quantum cascade structures by optical methods in the near infrared region von Kryzhkov, D. I., Morozov, S. V., Gaponova, D. M., Sergeev, S. M., Kuritsyn, K. I., Maremyanin, K. V., Gavrilenko, V. I., Sadofyev, Yu. G.

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Type II–type I conversion of GaAs/GaAsSb heterostructure energy spectrum under optical pumping von Morozov, S. V., Kryzhkov, D. I., Yablonsky, A. N., Antonov, A. V., Kuritsin, D. I., Gaponova, D. M., Sadofyev, Yu. G., Samal, N., Gavrilenko, V. I., Krasilnik, Z. F.

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Modification of the photoluminescence characteristics of CdZnTe/ZnTe QWs by CdTe monolayer film insertion von Borkovska, L. V., Korsunska, N. O., Sadofyev, Yu. G., Beyer, R., Weber, J., Kryshtab, T., Andraca-Adame, J. A., Kazakov, I. P., Kushnirenko, V. I.

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Comparison of different concepts of InAs quantum dot growth on GaAs for 1.3-μm-range lasers von Sadofyev, Yu. G.

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Evolution of the spin-split quantum Hall states with magnetic field tilt in the InAs-based double quantum wells von Yakunin, M V, Visser, Anne de, Galistu, Gianni, Podgornykh, S M, Sadofyev, Yu G, Shelushinina, N G, Harus, G I

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