Wide-band/dual-band packaged antenna for 5-6 GHz WLAN application von Ali, M., Sittironnarit, T., Hwang, H.-S., Sadler, R.A., Hayes, G.J.

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Design of a multiband internal antenna for third generation mobile phone handsets von Ali, M., Hayes, G.J., Huan-Sheng Hwang, Sadler, R.A.

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Development of an online tool to determine appropriateness for an epilepsy surgery evaluation von JETTE, Nathalie, HUDE QUAN, FARIS, Peter D, HERNANDEZ-RONQUILLO, Lizbeth, KWON, Churl-Su, KIRK, Andrew, WIEBE, Samuel, TELLEZ-ZENTENO, Jose F, MACRODIMITRIS, Sophia, HADER, Walter J, SHERMAN, Elisabeth M. S, HAMIWKA, Lorie D, WIRRELL, Elaine C, BURNEO, Jorge G, METCALFE, Amy

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A uniquely packaged internal inverted-F antenna for Bluetooth or wireless LAN application von Ali, M., Sadler, R.A., Hayes, G.J.

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Silicon Carbide MESFET's for High-Power S-Band Applications von Allen, S.T., Glass, R.C., Sumakeris, Joseph J., Alcorn, T.S., Carter Jr, Calvin H., Palmour, John W., Sadler, R.A.

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Raman-scattering studies of silicon-implanted gallium arsenide: the role of amorphicity von HOLTZ, M, ZALLEN, R, GEISSBERGER, A. E, SADLER, R. A

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Orientation effect reduction through capless annealing of self-aligned planar GaAs Schottky barrier field-effect transistors von SADLER, R. A, EASTMAN, L. F

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GaAs prescalers and counters for fast-settling frequency synthesizers von Singh, H.P., Sadler, R.A., Tanis, W.J., Schenberg, A.N.

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A new refractory self-aligned gate technology for GaAs microwave power FETs and MMICs von Geissberger, A.E., Bahl, I.J., Griffin, E.L., Sadler, R.A.

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A high yield buried p-layer fabrication process for GaAs LSI circuits von Sadler, R.A., Studtmann, G.D., Geissberger, A.E., Singh, H.P.

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A 5.1-GHz 1.9-mW GaAs binary frequency divider von Sadler, R.A., Geissberger, A.E., Singh, H.P.

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GaAs low-power integrated circuits for a high-speed digital signal processor von Singh, H.P., Sadler, R.A., Irvine, J.A., Gorder, G.E.

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GaAs IC's fabricated with the high-performance, high-yield multifunction self-aligned gate process for radar and EW applications von Bahl, I.J., Willems, D.A., Naber, J.F., Singh, H.P., Griffin, E.L., Pollman, M.D., Geissberger, A.E., Sadler, R.A.

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Dependence of deep-level parameters in ion-implanted GaAs MESFET's on material preparation von Dhar, S., Bhattacharya, P.K., Feng-Yuh Juang, Won-Pyo Hong, Sadler, R.A.

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Gallium arsenide (GaAs)-based photoconductive switches for pulse generation and sampling applications in the nanosecond regime von Bell, B.A., Perrey, A.G., Sadler, R.A.

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A high speed GaAs error-detection circuit for fiber-optic transmission systems von Singh, H.P., Sadler, R.A., Naber, J.F., Johannessen, B.O.

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High-speed GaAs multipliers fabricated with a high-yield 0.4- mu m process von Sadler, R.A., Studtmann, G.D., Singh, H.P.

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High-speed logic at 300K with self-aligned submicrometer-gate GaAs MESFET's von Sadler, R.A., Eastman, L.F.

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IVA-2 self-aligned submicron ion-implanted GaAs MESFETs for high-speed logic von Sadler, R.A., Eastman, L.F.

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Raman-scattering studies of implantation-amorphized gallium arsenide: Comparison to sputtered and evaporated a-GaAs films von Zallen, R., Holtz, M., Geissberger, A.E., Sadler, R.A., Paul, W., Thèye, M.-L.

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