Sepsis-related coagulopathy treatment based on the disseminated intravascular coagulation diagnostic criteria: a post-hoc analysis of a prospective multicenter observational study von Wada, Takeshi, Yamakawa, Kazuma, Kabata, Daijiro, Abe, Toshikazu, Fujishima, Seitaro, Kushimoto, Shigeki, Mayumi, Toshihiko, Ogura, Hiroshi, Saitoh, Daizoh, Shiraishi, Atsushi, Otomo, Yasuhiro, Gando, Satoshi

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Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals von Miki, Sakito, Umeno, S., Fujiwara, H., Sadamitsu, S., Hourai, M., Kajita, E., Shigematsu, T., Nagashima, T.

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Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers von Yonemura, Mitsuharu, Ono, T., Sueoka, Koji, Akatsuka, M., Koike, Y., Sadamitsu, S., Asayama, Eiichi

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Gettering in Advanced Low Temperature Processes von Ogushi, S., Tsuya, H., Sadamitsu, S., Koike, Y., Reilly, N., Nagashima, T., Sano, Mizuka

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Internal gettering for Ni contamination in Czochralski silicon wafers von SUEOKA, K, SADAMITSU, S, KOIKE, Y, KIHARA, T, KATAHAMA, H

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High voltage electron microscope study of defects in silicon von Oshima, R., Sadamitsu, S., Fujita, F.E.

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Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon von Sadamitsu, Shinsuke, Umeno, Shigeru, Koike, Yasuo, Hourai, Masataka, Shigeo Sumita, Shigeo Sumita, Tatsuhiko Shigematsu, Tatsuhiko Shigematsu

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Analysis of local lattice strains around plate-like oxygen precipitates in Czochralski-silicon wafers by convergent-beam electron diffraction von OKUYAMA, T, NAKAYAMA, M, SADAMITSU, S, NAKSHIMA, J, TOMOKIYO, Y

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Effect of oxide precipitates on the mechanical strength of large diameter epitaxial wafers von Akatsuka, M., Sueoka, K., Katahama, H., Sadamitsu, S., Koike, Y.

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Gettering characteristics of heavy metal impurities in silicon wafers with polysilicon back seal and internal gettering von OGUSHI, S, SADAMITSU, S, MARSDEN, K, KOIKE, Y, SANO, M

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Observation of ring-OSF nuclei in CZ-Si using short-time annealing and infrared light scattering tomography von MARSDEN, K, SADAMITSU, S, HOURAI, M, SUMITA, S, SHIGEMATSU, T

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Axial microscopic distribution of grown-in defects in Czochralski-grown silicon crystals von UMENO, S, SADAMITSU, S, MURAKAMI, H, HOURAI, M, SUMITA, S, SHIGEMATSU, T

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Generation of oxidation-induced stacking faults in Czochralski-grown silicon crystals exhibiting a ring-like distributed stacking fault region von MARSDEN, K, SADAMITSU, S, YAMAMOTO, T, SHIGEMATSU, T

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A model for the formation of oxidation-induced stacking faults in Czochralski silicon von SADAMITSU, S, OKUI, M, SUEOKA, K, MARSDEN, K, SHIGEMATSU, T

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Automated People Mover System for LTA Singapore "Crystal Mover" von Mochidome, H, Masukawa, M, Suzuki, Y, Kashiwa, M, Sadamitsu, S, Kouno, H

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Effect of Oxide Precipitate Size on Slip Generation in Large Diameter Epitaxial Wafers von Akatsuka, Masanori, Sueoka, Koji, Katahama, Hisashi, Koie, Yasuo, Sadamitsu, Shinsuke

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Degradation of gate oxide integrity by metal impurities von HIRAMOTO, K, SANO, M, SADAMITSU, S, FUJINO, N

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Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers von Yonemura, Mitsuharu, Ono, T., Sueoka, Koji, Akatsuka, M., Sadamitsu, S., Koike, Y., Asayama, Eiichi, Katahama, H.

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Transmission electron microscopy observation of defects induced by Fe contamination on Si(100) surface von SADAMITSU, S, SASAKI, A, HOURAI, M, SUMITA, S, FUJINO, N

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PROCESS FOR PRODUCING SILICON WAFER AND SILICON WAFER PRODUCED BY THE PROCESS von HOURAI, MASATAKA, SADAMITSU, S, AKATSUKA, M, SUGIMURL, WATARU

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