Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide von Xue, Yongzhou, Titze, Michael, Mack, John, Yang, Zhaohui, Zhang, Liang, Su, Shei S., Zhang, Zheshen, Fan, Linran

Volltext

Prognostic and therapeutic evaluation of nasopharyngeal carcinoma by dynamic contrast-enhanced (DCE), diffusion-weighted (DW) magnetic resonance imaging (MRI) and magnetic resonanc... von Mui, Alan W.L., Lee, Anne W.M., Lee, Victor H.F., Ng, W.T., Vardhanabhuti, Varut, Man, Shei S.Y., Chua, Daniel T.T., Law, Stephen C.K., Guan, X.Y.

Volltext

Influence of rinsing temperature on properties of ZnO thin films prepared by SILAR method with propylene glycol von Shei, S.C., Lee, P.Y.

Volltext

Evolution pathways for the formation of Nano-Cu2ZnSnSe4 absorber materials via elemental sources and isophorondiamine chelation von Lee, P.Y., Shei, S.C., Chang, S.J.

Volltext

SiNx nanopillars on AlGaInP-based light-emitting diodes to enhance light extraction using self-assembly ZnO nanomask coating by successive ionic layer adsorption and reaction metho... von Shei, S.C., Zeng, X.F., Lin, N.M., Chang, S.J.

Volltext

Correlations of tumour permeability parameters with apparent diffusion coefficient in nasopharyngeal carcinoma von Mui, Alan W.L., Lee, Anne W.M., Ng, W.T., Lee, Victor H.F., Vardhanabhuti, Varut, Man, Shei S.Y., Chua, Daniel T.T., Guan, X.Y.

Volltext

Nitride-Based High-Power Flip-Chip LED With Double-Side Patterned Sapphire Substrate von Shen, C.F., Chang, S.J., Chen, W.S., Ko, T.K., Kuo, C.T., Shei, S.C.

Volltext

SILAR-Based Application of Various Nanopillars on GaN-Based LED to Enhance Light-Extraction Efficiency von Shei, Shih-Chang

Volltext

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs von Chung-Hsun Jang, Sheu, J.K., Tsai, C.M., Shei, S.C., Lai, W.C., Chang, S.J.

Volltext

Improved Performance of GaN-Based Blue LEDs With the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer von Chung-Hsun Jang, Jinn-Kong Sheu, Tsai, C.M., Shoou-Jinn Chang, Wei-Chih Lai, Ming-Lun Lee, Ko, T.K., Shen, C.F., Shei, S.C.

Volltext

Sequencing of Sequence-Defined Oligourethanes via Controlled Self-Immolation von Dahlhauser, Samuel D, Escamilla, P. Rogelio, VandeWalle, Abigail N, York, Jordan T, Rapagnani, Rachel M, Shei, Jasper S, Glass, Samuel A, Coronado, Jaime N, Moor, Sarah R, Saunders, Douglas P, Anslyn, Eric V

Volltext

Highly reliable nitride-based LEDs with SPS+ITO upper contacts von Chang, S.J., Chang, C.S., Su, Y.K., Chuang, R.W., Lin, Y.C., Shei, S.C., Lo, H.M., Lin, H.Y., Ke, J.C.

Volltext

AlGaInP LEDs Prepared by Contact-Transferred and Mask-Embedded Lithography von Lo, H M, Hsieh, Y T, Shei, S C, Lee, Y C, Zeng, X F, Weng, W Y, Lin, N M, Chang, S J

Volltext

High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD von Tsai, C.M., Sheu, J.K., Wang, P.T., Lai, W.C., Shei, S.C., Chang, S.J., Kuo, C.H., Kuo, C.W., Su, Y.K.

Volltext

Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs von Hsu, Y.P, Chang, S.J, Su, Y.K, Sheu, J.K, Lee, C.T, Wen, T.C, Wu, L.W, Kuo, C.H, Chang, C.S, Shei, S.C

Volltext

AlGaInP-Based LEDs With a ^ -GaP Window Layer and a Thermally Annealed ITO Contact von Lo, H M, Shei, S C, Zeng, X F, Shoou-Jinn Chang, Hsieh-Yen Lin

Volltext

High-Brightness InGaN-GaN Power Flip-Chip LEDs von Shoou-Jinn Chang, Chen, W.S., Shei, S.C., Kuo, C.T., Ko, T.K., Shen, C.F., Tsai, J.M., Wei-Chi Lai, Jinn-Kong Sheu, Lin, A.J.

Volltext

Nitride-based LEDs with an SPS tunneling contact Layer and an ITO transparent contact von Chang, S.J., Chang, C.S., Su, Y.K., Chuang, R.W., Lai, W.C., Kuo, C.H., Hsu, Y.P., Lin, Y.C., Shei, S.C., Lo, H.M., Ke, J.C., Sheu, J.K.

Volltext

Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts von Lin, Y.C., Chang, S.J., Su, Y.K., Tsai, T.Y., Chang, C.S., Shei, S.C., Hsu, S.J., Liu, C.H., Liaw, U.H., Chen, S.C., Huang, B.R.

Volltext

Nitride-based LEDs with textured side walls von Chang, C.S., Chang, S.J., Su, Y.K., Lee, C.T., Lin, Y.C., Lai, W.C., Shei, S.C., Ke, J.C., Lo, H.M.

Volltext