FDSOI devices with thin BOX and ground plane integration for 32 nm node and below von Fenouillet-Beranger, C., Denorme, S., Perreau, P., Buj, C., Faynot, O., Andrieu, F., Tosti, L., Barnola, S., Salvetat, T., Garros, X., Cassé, M., Allain, F., Loubet, N., Pham-Nguyen, L., Deloffre, E., Gros-Jean, M., Beneyton, R., Laviron, C., Marin, M., Leyris, C., Haendler, S., Leverd, F., Gouraud, P., Scheiblin, P., Clement, L., Pantel, R., Deleonibus, S., Skotnicki, T.

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Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below von Fenouillet-Beranger, C., Perreau, P., Denorme, S., Tosti, L., Andrieu, F., Weber, O., Monfray, S., Barnola, S., Arvet, C., Campidelli, Y., Haendler, S., Beneyton, R., Perrot, C., de Buttet, C., Gros, P., Pham-Nguyen, L., Leverd, F., Gouraud, P., Abbate, F., Baron, F., Torres, A., Laviron, C., Pinzelli, L., Vetier, J., Borowiak, C., Margain, A., Delprat, D., Boedt, F., Bourdelle, K., Nguyen, B.-Y., Faynot, O., Skotnicki, T.

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Thin-film devices for low power applications von Monfray, S., Fenouillet-Beranger, C., Bidal, G., Boeuf, F., Denorme, S., Huguenin, J.L., Samson, M.P., Loubet, N., Hartmann, J.M., Campidelli, Y., Destefanis, V., Arvet, C., Benotmane, K., Clement, L., Faynot, O., Skotnicki, T.

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Efficient multi-VT FDSOI technology with UTBOX for low power circuit design von Fenouillet-Beranger, C, Thomas, O, Perreau, P, Noel, J.-P, Bajolet, A, Haendler, S, Tosti, L, Barnola, S, Beneyton, R, Perrot, C, de Buttet, C, Abbate, F, Baron, F, Pernet, B, Campidelli, Y, Pinzelli, L, Gouraud, P, Cassé, M, Borowiak, C, Weber, O, Andrieu, F, Denorme, S, Boeuf, F, Faynot, O, Skotnicki, T, Bourdelle, K K, Nguyen, B Y, Boedt, F

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Gate-all-around technology: Taking advantage of ballistic transport? von Huguenin, J.L., Bidal, G., Denorme, S., Fleury, D., Loubet, N., Pouydebasque, A., Perreau, P., Leverd, F., Barnola, S., Beneyton, R., Orlando, B., Gouraud, P., Salvetat, T., Clement, L., Monfray, S., Ghibaudo, G., Boeuf, F., Skotnicki, T.

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High-Performance High- K/Metal Planar Self-Aligned Gate-All-Around CMOS Devices von Pouydebasque, A., Denorme, S., Loubet, N., Wacquez, R., Bustos, J., Leverd, F., Deloffre, E., Barnola, S., Dutartre, D., Coronel, P., Skotnicki, T.

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Silicon MOSFETs as room temperature terahertz detectors von Videlier, H, Nadar, S, Dyakonova, N, Sakowicz, M, Dam, T Trinh Van, Teppe, F, Coquillat, D, Knap, W, Denorme, S, Skotnicki, T, Peiris, J M, Lyonnet, J

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Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution von Bidal, G., Loubet, N., Fenouillet-Beranger, C., Denorme, S., Perreau, P., Fleury, D., Clement, L., Laviron, C., Leverd, F., Gouraud, P., Barnola, S., Beneyton, R., Torres, A., Duluard, C., Chapon, J.D., Orlando, B., Salvetat, T., Grosjean, M., Deloffre, E., Pantel, R., Dutartre, D., Monfray, S., Ghibaudo, G., Boeuf, F., Skotnicki, T.

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Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below von Fenouillet-Beranger, C., Perreau, P., Denorme, S., Tosti, L., Andrieu, F., Weber, O., Monfray, S., Barnola, S., Arvet, C., Campidelli, Y., Haendler, S., Beneyton, R., Perrot, C., de Buttet, C., Gros, P., Pham-Nguyen, L., Leverd, F., Gouraud, P., Abbate, F., Baron, F., Torres, A., Laviron, C., Pinzelli, L., Vetier, J., Borowiak, C., Margain, A., Delprat, D., Boedt, F., Bourdelle, K., Nguyen, B.-Y., Faynot, O., Skotnicki, T.

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New insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology von Brunet, L, Garros, X, Cassé, M, Weber, O, Andrieu, F, Fenouillet-Béranger, C, Perreau, P, Martin, F, Charbonnier, M, Lafond, D, Gaumer, C, Lhostis, S, Vidal, V, Brevard́, L, Tosti, L, Denorme, S, Barnola, S, Damlencourt, J F, Loup, V, Reimbold, G, Boulanger, F, Faynot, O, Bravaix, A

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Hybrid Localized SOI/bulk technology for low power system-on-chip von Huguenin, J.-L, Monfray, S, Bidal, G, Denorme, S, Perreau, P, Barnola, S, Samson, M.-P, Arvet, C, Benotmane, K, Loubet, N, Liu, Q, Campidelli, Y, Leverd, F, Abbate, F, Clement, L, Borowiak, C, Cros, A, Bajolet, A, Handler, S, Marin-Cudraz, D, Benoist, T, Galy, P, Fenouillet-Beranger, C, Faynot, O, Ghibaudo, G, Boeuf, F, Skotnicki, T

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Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3 von Azzaz, M., Benoist, A., Vianello, E., Garbin, D., Jalaguier, E., Cagli, C., Charpin, C., Bernasconi, S., Jeannot, S., Dewolf, T., Audoit, G., Guedj, C., Denorme, S., Candelier, P., Fenouillet-Beranger, C., Perniola, L.

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Improvement of performances HfO2-based RRAM from elementary cell to 16kb demonstrator by introduction of thin layer of Al2O3 von Azzaz, M., Benoist, A., Vianello, E., Garbin, D., Jalaguier, E., Cagli, C., Charpin, C., Bernasconi, S., Jeannot, S., Dewolf, T., Audoit, G., Guedj, C., Denorme, S., Candelier, P., Fenouillet-Beranger, C., Perniola, L.

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Two-dimensional modeling of the enhanced diffusion in thin base n-p-n bipolar transistors after lateral ion implantations von Denorme, S., Mathiot, D., Dollfus, P., Mouis, M.

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Thin-film devices for low power applications: Selected Full-Length Extended Papers from the EUROSOI 2009 Conference von MONFRAY, S, FENOUILLET-BERANGER, C, DESTEFANIS, V, ARVET, C, BENOTMANE, K, CLEMENT, L, FAYNOT, O, SKOTNICKI, T, BIDAL, G, BOEUF, F, DENORME, S, HUGUENIN, J. L, SAMSON, M. P, LOUBET, N, HARTMANN, J. M, CAMPIDELLI, Y

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Consensus report on markers to distinguish procoagulant platelets from apoptotic platelets: communication from the Scientific and Standardization Committee of the ISTH von Josefsson, Emma C., Ramström, Sofia, Thaler, Johannes, Lordkipanidzé, Marie, Agbani, Ejaife O., Alberio, Lorenzo, Bakchoul, Tamam, Bouchard, Beth A., Camera, Marina, Chen, Vivien, Cognasse, Fabrice, Cosemans, Judith M.E.M., Dave, Rutvi G., Denorme, Frederik, Faille, Dorothée, Goodall, Alison H., Harper, Matthew T., Heemskerk, Johan, Jobe, Shawn M., Johnson, Lacey, Kholmukhamedov, Andaleb, Mandal, Saptarshi, Kannan, Meganathan, Mezzano, Diego, Mutch, Nicola, Rand, Margaret L., Roka-Moiia, Yana, Tersteeg, Claudia, Thomas, Kimberly A., Vara, Dina, Yuan, Yuping

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Si/SiGe Epitaxy and Selective Etch Applications for Advanced Thin-Films MOSFET Structures von Loubet, Nicolas, Boeuf, Frédéric, Monfray, Stéphane, Fenouillet-Beranger, Claire, Denorme, Stéphane, Bidal, Grégory, Skotnicki, Thomas, Dutartre, Didier

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High-Performance High-[Formula Omitted]/Metal Planar Self-Aligned Gate-All-Around CMOS Devices von Pouydebasque, A, Denorme, S, Loubet, N, Wacquez, R, Bustos, J, Leverd, F, Deloffre, E, Barnola, S, Dutartre, D, Coronel, P, Skotnicki, T

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High velocity Si-nanodot : A candidate for SRAM applications at 16nm node and below von Bidal, G., Boeuf, F., Denorme, S., Loubet, N., Huguenin, J.L., Perreau, P., Fleury, D., Leverd, F., Lagrasta, S., Barnola, S., Salvetat, T., Orlando, B., Beneyton, R., Clement, L., Pantel, R., Monfray, S., Ghibaudo, G., Skotnicki, T.

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Ultra Compact FDSOI Transistors including Strain and Orientation: Processing and Performance von Fenouillet-Beranger, Claire, Pham Nguyen, Loan, Perreau, Pierre, Denorme, Stephane, Andrieu, Francois, Faynot, Olivier, Tosti, Lucie, Brevard, Laurent, Buj, Christel, Weber, Olivier, Gallon, Claire, Fiori, V., Boeuf, Frederic, Cristoloveanu, S., Skotnicki, Thomas

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