Observation of Hollow Atoms or Ions above Insulator and Metal Surfaces von Briand, J, Thuriez, S, Giardino, G, Borsoni, G, Froment, M, Eddrief, M, Sébenne, C

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Decay of hollow atoms above and below a surface von Briand, J, Giardino, G, Borsoni, G, Froment, M, Eddrief, M, Sébenne, C, Bardin, S, Schneider, D, Jin, J, Khemliche, H, Xie, Z, Prior, M

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Stress relaxation at forming GaSe–Si(1 1 1) interfaces von Amimer, K, Eddrief, M, Sébenne, C.A

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Band structure of an epitaxial thin film of InSe determined by angle-resolved ultraviolet photoelectron spectroscopy von Amokrane, A, Proix, F, Monkad, S El, Cricenti, A, Barchesi, C, Eddrief, M, Amimer, K, Sébenne, C A

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Thermal stability of a partly Fe-intercalated GaSe film von Zerrouki, M, Lacharme, J.P, Ghamnia, M, Sébenne, C.A, Abidri, B

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Study of Fe deposition upon a layered compound: GaSe von Zerrouki, M., Lacharme, J.-P., Ghamnia, M., Sébenne, C.A., Eddrief, M., Abidri, B.

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A transmission electron microscopy structural analysis of GaSe thin films grown on Si(111) substrates von Koëbel, A., Zheng, Y., Pétroff, J.F., Eddrief, M., Vinh, Le Thanh, Sébenne, C.

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Low temperature formation of Si(111)7×7 surfaces from chemically prepared H/Si(111)-(1×1) surfaces von Vinh, Le Thanh, Eddrief, M., Sébenne, C. A., Dumas, P., Taleb-Ibrahimi, A., Gunther, R., Chabal, Y. J., Derrien, J.

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Image acceleration of highly charged ions on metal, semiconductor, and insulator surfaces von Briand, J.-P., Thuriez, S., Giardino, G., Borsoni, G., Le Roux, V., Froment, M., Eddrief, M., de Villeneuve, C., D'Etat-Ban, B., Sébenne, C.

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Heteroepitaxy of GaSe layered semiconductor compound on Si(111) 7 × 7 substrate: a Van der Waals epitaxy? von Vinh, Le Thanh, Eddrief, M., Sébenne, C., Sacuto, A., Balkanski, M.

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Surface electronic properties of GaSe-covered Si(111) upon UHV thermal desorption of the GaSe epitaxial layer von Reqqass, H., Lacharme, J.-P., Sébenne, C.A., Eddrief, M., Le Thanh, V.

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Reconstructions upon thermal desorption in ultra high vacuum of InSe covered Si(111) surfaces von PROIX, F, PANELLA, V, EL MONKAD, S, GLEBOV, A, LACHARME, J. P, EDDRIEF, M, AMIMER, K, SEBENNE, C. A, TOENNIES, J. P

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The GaSe/Si(111) interface: a core level study von Amokrane, A., Sébenne, C.A., Cricenti, A., Ottaviani, C., Proix, F., Eddrief, M.

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Water vapour adsorption on the Si(111)-(7 × 7) surface von Zaïbi, M.A., Lacharme, J.P., Sébenne, C.A.

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The effect of temperature on NH3–Si(111) interaction von Zaı̈bi, M.-A, Lacharme, J.-P, Sébenne, C.A

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Surface properties of Si(100)2×1 upon NH3 adsorption and vacuum annealing von CHERIF, S. M, LACHARME, J.-P, SEBENNE, C. A

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Surface properties of Si(111)7 × 7 upon NH3 adsorption and vacuum annealing von CHERIF, S. M, LACHARME, J.-P, SEBENNE, C. A

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Compositional and electronic properties of Si(001)2×1 upon diatomic sulfur interaction von Lacharme, J.P., Benazzi, N., Sébenne, C.A.

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Clean Si(110): a surface with intrinsic or extrinsic defects? von Safta, N., Lacharme, J.-P., Sébenne, C.A.

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Effect of Cu on InSe/Si(111) heterojunctions von Abidri, B., Lacharme, J.-P., Ghamnia, M., Sébenne, C. A., Zerrouki, M.

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