An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers von Simon, R., Lankinen, A., O'Reilly, L., McNally, Patrick J., Ren, N., Rowland, L.B., Tuomi, T.O., Brazil, I., Danilewsky, A., Soloviev, Stanislav I., Säynätjaki, A., Sandvik, Peter M.

Volltext