On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion von Rzin, Mehdi, Meneghini, Matteo, Rampazzo, Fabiana, Zhan, Veronica Gao, Marcon, Daniele, Grunenputt, Jan, Jung, Helmut, Lambert, Benoit, Riepe, Klaus, Blanck, Herve, Graff, Andreas, Altmann, Frank, Simon-Najasek, Michel, Poppitz, David, Meneghesso, Gaudenzio, Zanoni, Enrico

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Impact of Gate-Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs von Rzin, Mehdi, Routoure, Jean-Marc, Guillet, Bruno, Mechin, Laurence, Morales, Magali, Lacam, Cedric, Gamarra, Piero, Ruterana, Pierre, Medjdoub, Farid

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Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs von Rzin, M., Meneghini, M., Rampazzo, F., Zhan, V. Gao, De Santi, C., Kabouche, R., Zegaoui, M., Medjdoub, F., Meneghesso, G., Zanoni, E.

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Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs von Rzin, M., Labat, N., Malbert, N., Curutchet, A., Brunel, L., Lambert, B.

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Deep electrical characterization and modeling of parasitic effects and degradation mechanisms of AlGaN/GaN HEMTs on SiC substrates von Rzin, Mehdi

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