Fuel Salt for the Molten-Salt Reactor von Ponomarev, L. I., Seregin, M. B., Parshin, A. P., Mel’nikov, S. A., Mikhalichenko, A. A., Zagorets, L. P., Manuilov, R. N., Rzheutskii, A. A.

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Solubility of UF4, ThF4, and CeF3 in a LiF-NaF-KF melt von Seregin, M. B., Parshin, A. P., Kuznetsov, A. Yu, Ponomarev, L. I., Mel’nikov, S. A., Mikhalichenko, A. A., Rzheutskii, A. A., Manuilov, R. N.

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Solubility of UF4, ThF4, and CeF3 in the NaF-ZrF4 melt von Seregin, M. B., Parshin, A. P., Kuznetsov, A. Yu, Ponomarev, L. I., Mel’nikov, S. A., Mikhalichenko, A. A., Rzheutskii, A. A., Manuilov, R. N.

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Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3 von Ivanov, S V, Nechaev, D V, Sitnikova, A A, Ratnikov, V V, Yagovkina, M A, Rzheutskii, N V, Lutsenko, E V, Jmerik, V N

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Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates von MAUDER, C, REUTERS, B, HEUKEN, M, KALISCH, H, JANSEN, R. H, WANG, K. R, FAHLE, D, TRAMPERT, A, RZHEUTSKII, M. V, LUTSENKO, E. V, YABLONSKII, G. P, WOITOK, J. F, CHOU, M. M. C

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AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique von Jmerik, V.N., Shubina, T.V., Mizerov, A.M., Belyaev, K.G., Sakharov, A.V., Zamoryanskaya, M.V., Sitnikova, A.A., Davydov, V.Yu, Kop’ev, P.S., Lutsenko, E.V., Rzheutskii, N.V., Danilchik, A.V., Yablonskii, G.P., Ivanov, S.V.

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Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates von MAUDER, C, REUTERS, B, RAHIMZADEH KHOSHROO, L, RZHEUTSKII, M. V, LUTSENKO, E. V, YABLONSKII, G. P, WOITOK, J. F, HEUKEN, M, KALISCH, H, JANSEN, R. H

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Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow - green spectral region von Lutsenko, E.V., Voinilovich, A.G., Rzheutskii, N.V., Pavlovskii, V.N., Yablonskii, G.P., Sorokin, S.V., Gronin, S.V., Sedova, I.V., Kop'ev, P.S., Ivanov, S.V., Alanzi, M., Hamidalddin, A., Alyamani, A.

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Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire von Jmerik, V. N., Mizerov, A. M., Sitnikova, A. A., Kop'ev, P. S., Ivanov, S. V., Lutsenko, E. V., Tarasuk, N. P., Rzheutskii, N. V., Yablonskii, G. P.

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Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates von Lutsenko, E. V., Rzheutskii, N. V., Pavlovskii, V. N., Yablonskii, G. P., Nechaev, D. V., Sitnikova, A. A., Ratnikov, V. V., Kuznetsova, Ya. V., Zhmerik, V. N., Ivanov, S. V.

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Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates von MAUDER, C, RAHIMZADEH KHOSHROO, L, KALISCH, H, JANSEN, R. H, BEHMENBURG, H, WEN, T. C, DIKME, Y, RZHEUTSKII, M. V, YABLONSKII, G. P, WOITOK, J, CHOU, M. M. C, HEUKEN, M

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Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al 2 O 3 von Ivanov, S V, Nechaev, D V, Sitnikova, A A, Ratnikov, V V, Yagovkina, M A, Rzheutskii, N V, Lutsenko, E V, Jmerik, V N

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Highly n-type doped InGaN films for efficient direct solar hydrogen generation von Mauder, C., Tuna, Ö., Gutrath, B., Balmes, V., Behmenburg, H., Rzheutskii, M. V., Lutsenko, E. V., Yablonskii, G. P., Noyong, M., Simon, U., Heuken, M., Kalisch, H., Vescan, A.

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Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3 von Jmerik, V. N., Mizerov, A. M., Shubina, T. V., Toropov, A. A., Belyaev, K. G., Sitnikova, A. A., Yagovkina, M. A., Kop'ev, P. S., Lutsenko, E. V., Danilchyk, A. V., Rzheutskii, N. V., Yablonskii, G. P., Monemar, B., Ivanov, S. V.

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Solar-blind AlxGa1–xN (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter von Kuznetsova, N. V., Nechaev, D. V., Shmidt, N. M., Karpov, S. Yu, Rzheutskii, N. V., Zemlyakov, V. E., Kaibyshev, V. Kh, Kazantsev, D. Yu, Troshkov, S. I., Egorkin, V. I., Ber, B. Ya, Lutsenko, E. V., Ivanov, S. V., Jmerik, V. N.

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Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO2 substrates von Mauder, C., Wang, K. R., Reuters, B., Behmenburg, H., Khoshroo, L. Rahimzadeh, Wan, Q., Trampert, A., Rzheutskii, M. V., Lutsenko, E. V., Yablonskii, G. P., Woitok, J. F., Heuken, M., Kalisch, H., Jansen, R. H.

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Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO 2 substrates von Mauder, C., Reuters, B., Wang, K.R., Fahle, D., Trampert, A., Rzheutskii, M.V., Lutsenko, E.V., Yablonskii, G.P., Woitok, J.F., Chou, M.M.C., Heuken, M., Kalisch, H., Jansen, R.H.

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Solar-blind Al x Ga1–x N (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter von Kuznetsova, N. V., Nechaev, D. V., Shmidt, N. M., Karpov, S. Yu, Rzheutskii, N. V., Zemlyakov, V. E., Kaibyshev, V. Kh, Kazantsev, D. Yu, Troshkov, S. I., Egorkin, V. I., Ber, B. Ya, Lutsenko, E. V., Ivanov, S. V., Jmerik, V. N.

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Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO sub( 2) substrates von Mauder, C, Reuters, B, Khoshroo, LRahimzadeh, Rzheutskii, M V, Lutsenko, E V, Yablonskii, G P, Woitok, J F, Heuken, M, Kalisch, H, Jansen, R H

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Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO sub(2 substrates) von Mauder, C, Reuters, B, Wang, K R, Fahle, D, Trampert, A, Rzheutskii, M V, Lutsenko, E V, Yablonskii, G P, Woitok, J F, Chou, MMC, Heuken, M, Kalisch, H, Jansen, R H

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