Changes in Luminescence of Ce:yag Crystals Under Ionizing Radiation Treatment von Kaczmarek, S.M., Moroz, Z., Kwasny, M., Kisielewski, J., Lukasiewicz, T., Wojtkowska, J., Rzewuski, H.

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Amorphization of p-implanted GaAs von Krynicki, J., Rzewuski, H., Turos, A., Sidor, R.

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Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature von Krynicki, J., Rzewuski, H., Groetzschel, R., Claverie, A.

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Ionization Assisted Transformations of Defects in Carbon Implanted Silicon von Krynicki, J., Rzewuski, H.

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Deep electronic levels in carbon-implanted silicon von Krynicki, J., Rzewuski, H.

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Distant DAP bands in electron-irradiated and ion-implanted CdSe von Kozanecki, A., Rzewuski, H.

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Ionization-enhanced crystallization of phosphorus implanted silicon layers von Suski, J., Rzewuski, H.

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Divacancy-like temperature transformation stage at 230 K in electron-irradiated N-type germanium von Jaworowski, A., Rzewuski, H.

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A Study of Excitonic Spectra in CdSxSe1−x Mixed Crystals von Kozanecki, A., Werner, Z., Rzewuski, H., Loferski, J. J.

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New Double‐Frequency Method for Hall Coefficient Measurements von Rzewuski, H., Werner, Z.

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Ionization assisted annealing of boron implanted silicon von Rzewuski, H., Suski, J., Krynicki, J.

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Ionization enhanced annealing in P and As implanted Si layers von Suski, J., Krynicki, J., Rzewuski, H., Gyulai, J.

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Annealing of Hall-Mobility Changes in Electron-Irradiated Germanium von Jaworowski, A., Merski, K., Rzewuski, H., Werner, Z.

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Electron irradiation assisted annealing of boron and phosphorus implanted silicon layers von Suski, J., Csepregi, L., Gyulai, J., Rzewuski, H., Werner, Z.

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Ionization enhanced annealing in phosphorus implanted silicon von Suski, J., Krynicki, J., Rzewuski, H., Gyulai, J., Loferski, J. J.

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Transformation of simple defects in radiation converted p-Type Ge At 200°K von Krynicki, J., Rzewuski, H., Werner, Z.

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Range-energy relation for low energy protons in Si and Ge von Marcinkowski, A., Rzewuski, H., Werner, Z.

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Heterogeneous Amorphization of P and As Implanted GaAs at Low Temperatures von Krynicki, J., Rzewuski, H., Turos, A.

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Particularities of crystalline to amorphous state conversion in silicon heavily damaged by 140 keV Si++ ions von Golański, A., Fiderkiewicz, A., Rzewuski, H., Lefeld-Sosnowska, M., Gronkowski, J., Grötzschel, R., Kreissig, U., Bartsch, H.

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Damage Production in As Implanted GaAs 1-x P x von Krynicki, J., Warchoł, S., Rzewuski, H., Groetzschel, R.

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