Physics of p-n Junctions and Semiconductor Devices

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Physics of P-n Junctions and Semiconductor Devices von Ryvkin, S. M

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Physics of P-N Junctions and Semiconductor Devices von Ryvkin, S. M

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A doped highly compensated crystal semiconductor as a model of amorphous semiconductors von Ryvkin, S. M., Shlimak, I. S.

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Recombination Radiation Spectra in ZnSiP2 Crystals von Alekperova, E. E., Valov, Yu. A., Goryunova, N. A., Ryvkin, S. M., Shpenkov, G. P.

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Indirect Optical Transitions Induced by Carrier Interaction in Semiconductors von Ryvkin, S. M.

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On a possible reason for potential fluctuations in amorphous semiconductors von Ryvkin, S. M.

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Kinetics of impurity photoconductivity von Ryvkin, S.M.

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An Anisotropic Photon Drag Effect in Nonspherical-Band Cubic Semiconductors von Valov, P. M., Ryvkin, B. S., Ryvkin, S. M., Yaroshetskii, I. D.

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Ionization mechanism of the defect production in semiconductors von Klinger, M. I., Emtsev, V. V., Mashovets, T. V., Ryvkin, S. M., Vitovskii, N. A.

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Photographic action of positively charged nitrogen ions on AgBr von Astrov, Yu. A., Zhelev, V., Malinowski, J., Ryvkin, S. M.

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Dmitriĭ Nikolaevich Nasledov (obituary) von Alferov, Zhores I, Vul, V M, Kolomiets, B T, Ryvkin, S M, Tuchkevich, V M, Ukhanov, Yu I

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New photographic system for investigating characteristics of infrared laser radiation von Astrov, Yu A, Egorov, V V, Kasymov, Sh S, Murugov, Vasilii M, Paritskii, L G, Ryvkin, S M, Sheremet'ev, Yu N

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Investigations of Some Properties of Vitreous and Crystalline CdGeP2 von Goryunova, N. A., Ryvkin, S. M., Shpenikov, G. P., Tichina, I. I., Fedotov, V. G.

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X-ray detectors based on cadmium telluride von Kushniruk, V. F., Maslova, L. V., Matveev, O. A., Ponomarev, V. S., Ryvkin, S. M., Terent'ev, A. I., Kharitonov, Yu. P., Khusainov, A. Kh

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Application of germanium p-i-n detectors stable at room temperature in nondispersion X-ray analysis von Ryvkin, S.M., Goganov, D.A., Zhukovsky, A.N., Komyak, N.I., Plotnikov, R.I., Strokan, N.B., Khusainov, A.Kh

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Solid-State Nuclear-Radiation Counters von Ryvkin, S M

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Some Characteristics of The Capacitance of n’—p-n Structures with “Deep” Levels von Makovskii, L. L., Ryvkin, S. M., Strokan, N. B., Subasheva, V. P., Khusainov, A. Kh

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Silicon spectrometric detectors with a wide sensitivity region von Matveev, O. A., Ryvkin, S. M.

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Fast response silicon detectors for pulsed x-rays von Matveev, O. A., Ryvkin, S. M., Tarkhin, D. V.

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