ZnGeP2 synthesis and growth from melt von Verozubova, G.A., Gribenyukov, A.I., Korotkova, V.V., Ruzaikin, M.P.

Volltext

Surface processes of impurity incorporation during MBE growth von Hervieu, Y.Y., Ruzaikin, M.P.

Volltext

Adsorbed layers on (111)InAs faces in contact with In-As-Cl-H gas phase, and the possibility of phase transitions in the adsorbed layers von Chernov, A.A., Ruzaikin, M.P.

Volltext

Surface processes of impurity incorporation during MBE growth von HERVIEU, Y. Y, RUZAIKIN, . M. P

Volltext

Modeling migration of adsorbed atoms in dense multicomponent adsorbed layers von Kotlyarevskii, V. M., Ruzaikin, M. P., Erv'e, Yu. Yu

Volltext

Relationship between characteristics of steady and nonsteady impurity capture processes in molecular beam crystallization von Ruzaikin, M. P., rv'e, Yu. Yu

Volltext

Imitative modeling of the evolution of surface structures during crystal growth from a molecular beam von Ruzaikin, M. P., Filimonov, S. N., Érv'e, Yu. Yu

Volltext

Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes von Bobrovnikova, I. A., Vilisova, M. D., Porokhovnichenko, L. P., Ruzaikin, M. P., Ryazanov, V. N.

Volltext

Brillouin zone of a base-centered monoclinic lattice von Ruzaikin, M. P., Kudryavtseva, N. V.

Volltext

Investigation of the laws of dispersion in crystals having a monoclinic base-centered lattice von Kudryavtseva, N. V., Ruzaikin, M. P.

Volltext

EQUILIBRIUM ADSORPTION LAYERS ON GaAs (111) and Si (111) SURFACES IN CVD GROWTH von Chernov, A. A., Ruzaikin, M. P.

Volltext

Anisotropy during vapor-phase epitaxy of indium arsenide: II. Growth-rate anisotropy and impurity trapping von Aleksandrova, G. A., Ivonin, I. V., Lavrent'eva, L. G., Lymar', G. F., Ruzaikin, M. P., Shubin, A. E.

Volltext