Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire von Ruvimov, Sergei, Liliental-Weber, Zuzanna, Suski, Tadeusz, Ager, Joel W., Washburn, Jack, Krueger, Joachim, Kisielowski, Christian, Weber, Eicke R., Amano, H., Akasaki, I.

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Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy von Ruvimov, Sergei, Liliental-Weber, Zuzanna, Washburn, Jack, Drummond, Timothy J., Hafich, Michael, Lee, Stephen R.

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GaN thin films by growth on Ga-rich GaN buffer layers von Kim, Yihwan, Subramanya, Sudhir G., Siegle, Henrik, Krüger, Joachim, Perlin, Piotr, Weber, Eicke R., Ruvimov, Sergei, Liliental-Weber, Zuzanna

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GaN thin films by growth on Ga rich GaN buffer layers von Kim, Yihwan, Subramanya, Sudhir G., Siegle, Henrik, Kruger, Joachim, Perlin, Piotr, Weber, Eicke R., Ruvimov, Sergei, Liliental-Weber, Zuzanna

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Nucleation and evolution of misfit dislocations in ZnSe/GaAs (001) heterostructures grown by low-pressure organometallic vapor phase epitaxy von Ruvimov, Sergei, Bourret, Edith D., Washburn, Jack, Liliental-Weber, Zuzanna

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