Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes von Rusch, Oleg, Moult, Jonathan, Erlbacher, Tobias

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Highly Efficient Floating Field Rings for SiC Power Electronic Devices - A Systematic Experimental Study von Rusch, Oleg, Moult, Jonathan, Erlbacher, Tobias, Corcoran, Yunji L., Broderick, Lirong Z., Tong, Tong

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A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation von Kupfer, Barbara, Koo, Sang Mo, Förthner, Julietta, Byun, Dong Wook, Ehrensberger, Kevin, Shin, Hoon Kyu, Oertel, Susanne, Rusch, Oleg, Lim, Minwho, Beuer, Susanne, Csato, Constantin, Kim, Seongjun, Erlbacher, Tobias

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Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC: Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th... von Hellinger, Carsten, Rusch, Oleg, Rommel, Mathias, Bauer, Anton J, Erlbacher, Tobias

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Device Design and Process Integration of SiC Trench MOSFETs: Presentation held at 5th International Symposium on SiC Materials and Devices 2021, November 25, 2021, Busan, Korea von Lim, Minwho, Rusch, Oleg, Erlbacher, Tobias, Bauer, Anton

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Frabrication and Evaluation of 4H-SiC Double Trench MOSFETs on 6-inch Wafer: Presentation held at ICAE 2021, 6th International Conference on Advanced Electromaterials, Hybrid Confe... von Lim, Minwho, Kim, Seongjun, Rusch, Oleg, Kang, Min-Jae, Sung, Mi-Je, Kwak, Juyoung, Lee, Nam-Suk, Shin, Hoon-Kyu, Erlbacher, Tobias, Bauer, Anton

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Method for manufacturing trench MOSFET von RUSCH OLEG, LIN MINGDE, SLEDZIEWSKI TOMASZ, ERLBACHER TOBIAS, SCHLICHTING HOLGER

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METHOD OF MANUFACTURING A TRENCH MOSFET von Rusch, Oleg, Erlbacher, Dr. Tobias, Schlichting, Holger, Lim, Minwho, Sledziewski, Dr. Tomasz

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