Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications von Wellmann, Peter, Ohtani, Noboru, Rupp, Roland

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1200V SiC JFET in Cascode Light Configuration: Comparison versus Si and SiC Based Switches von Hilsenbeck, Jochen, Rupp, Roland, Treu, Michael, Domes, Daniel, Kutschak, M.A., Björk, Fanny

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SiC MPS Devices: One Step Closer to the Ideal Diode von Elpelt, Rudolf, Schörner, Reinhold, Rupp, Roland, Gerlach, Rolf, Draghici, Mihai

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A New 1200V SiC MPS Diode with Improved Performance and Ruggedness von Zippelius, Bernd, Rupp, Roland, Gerlach, Rolf, Draghici, Mihai

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Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs von Esteve, Romain, Heidorn, Christian, Rupp, Roland, Höchbauer, Tobias

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Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer von Esteve, Romain, Heidorn, Christian, Höchbauer, Tobias, Krieger, Michael, Rupp, Roland, Weber, Heiko B.

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Dispersant Use and a Bioremediation Strategy as Alternate Means of Reducing Impacts of Large Oil Spills on Mangroves: The Gladstone Field Trials von Duke, Norman C, Burns, Kathryn A, Swannell, Richard P.J, Dalhaus, Otto, Rupp, Roland J

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Current Distribution in the Various Functional Areas of a 600V SiC MPS Diode in Forward Operation von Gerlach, Rolf, Rupp, Roland, Kabakow, Andre

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Reliability aspects of SiC Schottky diodes von Holz, Matthias, Hilsenbeck, Jochen, Rupp, Roland

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Performance of a 650V SiC Diode with Reduced Chip Thickness von Schlögl, Andreas, Rupp, Roland, Kern, Ronny, Kirchner, Uwe, Gerlach, Rolf

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An electrical and physical study of crystal damage in high-dose Al- and N-implanted 4H-SiC von Fisher, C. A., Esteve, R., Doering, S., Roesner, M., De Biasio, M., Kraft, M., Schustereder, W., Rupp, R.

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Reliability of SiC power devices and its influence on their commercialization - review, status, and remaining issues von Treu, M, Rupp, R, Solkner, G

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650V SiC JFET for High Efficiency Applications von Kueck, Daniel, Bergner, Wolfgang, Rupp, Roland, Kirchner, Uwe

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Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices von Schustereder, Werner, Kern, Ronny, Rüb, Michael, Csato, Constantin, Höchbauer, Tobias, Rupp, Roland, Akhmadaliev, Shavkat, von Borany, Johannes, Krippendorf, Florian

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Thermal Management versus Full Isolation: Trade Off in Packaging Technologies of Modern SiC Diodes von Rupp, Roland, Türkes, Peter, Otremba, Ralf, Gerlach, Rolf

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Silicon Carbide Components and Methods for Producing Silicon Carbide Components von Rupp, Roland, Kern, Ronny

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SiC Power Devices: Product Improvement Using Diffusion Soldering von Heinrich, Alexander, Hilsenbeck, Jochen, Türkes, Peter, Rupp, Roland, Otremba, Ralf, Holz, Matthias

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Silicon carbide components and methods for producing silicon carbide components von Rupp, Roland, Kern, Ronny

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Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide von Friedrichs, Peter, Ryssel, Heiner, Treu, Michael, Rupp, Roland, Wiedenhofer, A., Schörner, Reinhold, Stephani, Dietrich

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Method for forming a semiconductor device and a semiconductor device von Rupp, Roland, Schulze, Hans-Joachim

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