Plasmonic and bolometric terahertz detection by graphene field-effect transistor von Muraviev, A. V., Rumyantsev, S. L., Liu, G., Balandin, A. A., Knap, W., Shur, M. S.

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Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures von Rumyantsev, S L, Shur, M S, Levinshtein, M E, Ivanov, P A, Palmour, J W, Agarwal, A K, Hull, B A, Ryu, Sei-Hyung

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Low-frequency 1/ f noise in MoS2 transistors: Relative contributions of the channel and contacts von Renteria, J., Samnakay, R., Rumyantsev, S. L., Jiang, C., Goli, P., Shur, M. S., Balandin, A. A.

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Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes von Kozlovski, V. V., Lebedev, A. A., Levinshtein, M. E., Rumyantsev, S. L., Palmour, J. W.

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Performance limits for field effect transistors as terahertz detectors von Kachorovskii, V. Yu, Rumyantsev, S. L., Knap, W., Shur, M.

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High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics von Jiang, C., Rumyantsev, S. L., Samnakay, R., Shur, M. S., Balandin, A. A.

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CdS based novel photo-impedance light sensor von Saxena, T, Rumyantsev, S L, Dutta, P S, Shur, M

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AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range von Sai, P, But, D B, Yahniuk, I, Grabowski, M, Sakowicz, M, Kruszewski, P, Prystawko, P, Khachapuridze, A, Nowakowski-Szkudlarek, K, Przybytek, J, Wi niewski, P, Stonio, B, S owikowski, M, Rumyantsev, S L, Knap, W, Cywi ski, G

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An ultra-stable non-coherent light source for optical measurements in neuroscience and cell physiology von Salzberg, B.M., Kosterin, P.V., Muschol, M., Obaid, A.L., Rumyantsev, S.L., Bilenko, Yu, Shur, M.S.

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Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes von Levinshtein, Michael E., Palmour, John W., Kozlovski, Vitalii V., Rumyantsev, S.L., Lebedev, Alexander A.

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Degradation of AlGaN-based ultraviolet light emitting diodes von Sawyer, S., Rumyantsev, S.L., Shur, M.S.

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Optical triggering of high-voltage (18 kV-class) 4H-SiC thyristors von Rumyantsev, S L, Levinshtein, M E, Shur, M S, Cheng, L, Agarwal, A K, Palmour, J W

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Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors von Rumyantsev, S. L., Pala, N., Shur, M. S., Gaska, R., Levinshtein, M. E., Adivarahan, V., Yang, J., Simin, G., Khan, M. Asif

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Tunneling mechanism of the 1∕f noise in GaN∕AlGaN heterojunction field-effect transistors von Dmitriev, A. P., Levinshtein, M. E., Rumyantsev, S. L., Shur, M. S.

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Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors von Rumyantsev, S. L., Pala, N., Shur, M. S., Gaska, R., Levinshtein, M. E., Khan, M. Asif, Simin, G., Hu, X., Yang, J.

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Optical triggering of 4H-SiC thyristors (18 kV class) to high currents in purely inductive load circuit von Rumyantsev, S L, Levinshtein, M E, Saxena, T, Shur, M S, Cheng, L, Palmour, J W, Agarwal, A

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High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor von Rumyantsev, S L, Levinshtein, M E, Shur, M S, Cheng, L, Agarwal, A K, Palmour, J W

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On the low frequency noise mechanisms in GaN/AlGaN HFETs von Rumyantsev, S L, Deng, Y, Shur, S, Levinshtein, M E, Khan, M Asif, Simin, G, Yang, J, Hu, X, Gaska, R

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Optical triggering of 12 kV, 100 A 4H-SiC thyristors von Rumyantsev, S L, Levinshtein, M E, Shur, M S, Saxena, T, Zhang, Q J, Agarwal, A K, Palmour, J W

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Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors von Rumyantsev, S. L., Pala, N., Shur, M. S., Gaska, R., Levinshtein, M. E., Khan, M. Asif, Simin, G., Hu, X., Yang, J.

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