An Accurate Model for InP HEMT Small-Signal Equivalent Circuit Based on EM Simulation von Feng, Zhiyu, Cao, Shurui, Feng, Ruize, Zhou, Fugui, Su, Yongbo, Ding, Wucang, Jin, Zhi

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Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs von Cao, Shurui, Feng, Ruize, Wang, Bo, Liu, Tong, Ding, Peng, Jin, Zhi

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Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs von Feng, Ruize, Wang, Bo, Cao, Shurui, Liu, Tong, Su, Yongbo, Ding, Wuchang, Ding, Peng, Jin, Zhi

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Ultra‐thin Body Buried In0.35Ga0.65As Channel MOSFETs with Extremely Low Off‐current on Si Substrates von Bo, WANG, Peng, DING, Ruize, FENG, Yanfu, WANG, Xiaoyu, LIU, Tangyou, SUN, Yonghe, CHEN, Xingpeng, LIU, Qi, LI, Yue, LI, Yingbo, LIU, Yihui, YIN, Hao, ZHAO, Wei, ZHANG, Haiou, LI, Zhi, JIN

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Performance Improvement by SiO₂ Hardmask in 100-nm InP-Based HEMTs for TMIC Applications von Cao, Shurui, Feng, Ruize, Zhou, Fugui, Feng, Zhiyu, Ding, Peng, Su, Yongbo, Jin, Zhi

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Performance Improvement by SiO } Hardmask in 100-nm InP-Based HEMTs for TMIC Applications von Cao, Shurui, Feng, Ruize, Zhou, Fugui, Feng, Zhiyu, Ding, Peng, Su, Yongbo, Jin, Zhi

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Accurate Modeling Approach for InP f T -Doubler Based on Electromagnetic Simulation von Wang, Yanzhe, Ding, Jianjun, Feng, Ruize, Cao, Shurui, Zhou, Fugui, Ding, Wuchang, Su, Yongbo, Jin, Zhi

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Accurate Modeling Approach for InP \textit} -Doubler Based on Electromagnetic Simulation von Wang, Yanzhe, Ding, Jianjun, Feng, Ruize, Cao, Shurui, Zhou, Fugui, Ding, Wuchang, Su, Yongbo, Jin, Zhi

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Impact of SiO2 hardmask on the DC and RF characteristics of InP HEMTs von Zhou, Fugui, Feng, Ruize, Cao, Shurui, Feng, Zhiyu, Liu, Tong, Su, Yongbo, Shi, Jingyuan, Din, Wuchang, Jin, Zhi

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A Four-Port Noise De-Embedding Methodology for On-Wafer Microwave Device Based on Electromagnetic Simulation von Feng, Zhiyu, Ding, Wucang, Su, Yongbo, Feng, Ruize, Zhou, Fugui, Gong, Hang, Jin, Zhi

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High-Performance InGaAs HEMTs on Si Substrates for RF Applications von Wang, Bo, Wang, Yanfu, Feng, Ruize, Wei, Haomiao, Cao, Shurui, Liu, Tong, Liu, Xiaoyu, Li, Haiou, Ding, Peng, Jin, Zhi

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Ultra‐thin Body Buried In 0.35 Ga 0.65 As Channel MOSFETs with Extremely Low Off‐current on Si Substrates von Bo, WANG, Peng, DING, Ruize, FENG, Yanfu, WANG, Xiaoyu, LIU, Tangyou, SUN, Yonghe, CHEN, Xingpeng, LIU, Qi, LI, Yue, LI, Yingbo, LIU, Yihui, YIN, Hao, ZHAO, Wei, ZHANG, Haiou, LI, Zhi, JIN

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Semiconductor device structure, manufacturing method thereof and high electron mobility transistor von TONG ZHIHANG, LIU TONG, DING WUCHANG, SU YONGBO, WANG YANFU, FENG RUIZE, ZHOU JINGTAO, DING PENG, JIN ZHI, WANG BO, YANG FENG

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Regulation of mATG9 trafficking by Src- and ULK1mediated phosphorylation in basal and starvation-induced autophagy von Changqian Zhou Kaili Ma Ruize Gao Chenglong Mu Linbo Chen Qiangqiang Liu Qian Luo Du Feng Yushan Zhu Quan Chen

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Identification of the factors that influence service innovation in manufacturing enterprises by using the fuzzy DEMATEL method von Feng, Changli, Ma, Ruize

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Dynamic Saliency-Aware Regularization for Correlation Filter-Based Object Tracking von Feng, Wei, Han, Ruize, Guo, Qing, Zhu, Jianke, Wang, Song

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The impact of service innovation on firm performance: a meta-analysis von Feng, Changli, Ma, Ruize, Jiang, Lin

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Oxygen-Rich Enzyme Biosensor Based on Superhydrophobic Electrode von Lei, Yongjiu, Sun, Ruize, Zhang, Xiangcheng, Feng, Xinjian, Jiang, Lei

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Fast Learning of Spatially Regularized and Content Aware Correlation Filter for Visual Tracking von Han, Ruize, Feng, Wei, Wang, Song

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Regulation of mATG9 trafficking by Src- and ULK1-mediated phosphorylation in basal and starvation-induced autophagy von Zhou, Changqian, Ma, Kaili, Gao, Ruize, Mu, Chenglong, Chen, Linbo, Liu, Qiangqiang, Luo, Qian, Feng, Du, Zhu, Yushan, Chen, Quan

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