Thermal Stability of Ferroelectric Films Based on Hafnium–Zirconium Dioxide on Silicon von Popov, V. P., Antonov, V. A., Tikhonenko, F. V., Myakonkikh, A. V., Rudenko, K. V.

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Atomic Layer Deposition of Thin Films onto 3D Nanostructures: The Effect of Wall Tilt Angle and Aspect Ratio of Trenches von Fadeev, A. V., Rudenko, K. V.

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To the Issue of the Memristor’s HRS and LRS States Degradation and Data Retention Time von Fadeev, A. V., Rudenko, K. V.

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Robust semiconductor-on-ferroelectric structures with hafnia–zirconia–alumina UTBOX stacks compatible with CMOS technology von Popov, V P, Antonov, V A, Tikhonenko, F V, Tarkov, S M, Gutakovskii, A K, Tyschenko, I E, Miakonkikh, A V, Lomov, A A, Rogozhin, A E, Rudenko, K V

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Evolution of the Current–Voltage Characteristic of a Bipolar Memristor von Fadeev, A. V., Rudenko, K. V.

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Dielectric permittivity of organosilicate glass thin films on a sapphire substrate determined using time-domain THz and Fourier IR spectroscopy von Komandin, G A, Nozdrin, V S, Chernomyrdin, N V, Seregin, D S, Vishnevskiy, A S, Kurlov, V N, Vorotilov, K A, Miakonkikh, A V, Lomov, A A, Rudenko, K V, Spektor, I E

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Investigation of Fluorocarbon Film Deposition from Ar/CF4/H2 Plasma for the Implementation of the Atomic Layer Etching Process von Kuzmenko, V. O., Miakonkikh, A. V., Rudenko, K. V.

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Cryo Plasma Etching of Porous Low-k Dielectrics von Miakonkikh, A. V., Kuzmenko, V. O., Rudenko, K. V.

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Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures von Permyakova, O. O., Rogozhin, A. E., Myagonkikh, A. V., Rudenko, K. V.

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Measurement of the gas temperature of neutrals in reactive plasmas by moderate-resolution OES von Miakonkikh, A.V., Rudenko, K.V.

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Analysis of the Effects Influencing the Retention Time of Filament-Based Memristors von Fadeev, A. V., Rudenko, K. V.

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Parameters and Composition of Plasma in a CF4 + H2 + Ar Mixture: Effect of CF4/H2 Ratio von Miakonkikh, A. V., Kuzmenko, V. O., Efremov, A. M., Rudenko, K. V.

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Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru(EtCp)2 von Smirnova, E A, Miakonkikh, A V, Rogozhin, A E, Rudenko, K V

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Tapered Silicon Oxide Etching for Creation of Capacitor Structures for Measurement of Dielectric Characteristics von Miakonkikh, A. V., Kuzmenko, V. O., Melnikov, A. E., Rudenko, K. V.

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Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition von Chesnokov, Yu. M., Miakonkikh, A. V., Rogozhin, A. E., Rudenko, K. V., Vasiliev, A. L.

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Atomic layer deposition of Ruthenium on different interfaces for an advanced metallization system of ICs von Smirnova, E A, Miakonkikh, A V, Rogozhin, A E, Rudenko, K V

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Application of the Tikhonov Regularization Method in Problems of Ellipsometic Porometry of Low-K Dielectrics von Gaidukasov, R. A., Myakon’kikh, A. V., Rudenko, K. V.

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Erratum to: Application of the Tikhonov Regularization Method in Problems of Ellipsometic Porometry of Low-K Dielectrics von Gaidukasov, R. A., Myakon’kikh, A. V., Rudenko, K. V.

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Anisotropic plasma etching of Silicon in gas chopping process by alternating steps of oxidation and etching von Miakonkikh, A.V., Averkin, S.N., Rudenko, K.V.

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Analytical Model for Atomic-Layer Deposition of Thin Films on the Walls of Cylindrical Holes with a Relatively High Aspect Ratio von Fadeev, A. V., Rudenko, K. V.

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