Structural, vibrational, and electronic behavior of two GaGeTe polytypes under compression von Bandiello, E., Gallego-Parra, S., Liang, A., Sans, J.A., Cuenca-Gotor, V., Lora da Silva, E., Vilaplana, R., Rodríguez-Hernández, P., Muñoz, A., Diaz-Anichtchenko, D., Popescu, C., Alabarse, F.G., Rudamas, C., Drasar, C., Segura, A., Errandonea, D., Manjón, F.J.

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CARACTERIZACION DE TEJIDO CERVICAL CANCEROSO Y PRE-CANCEROSO MEDIANTE ESPECTROSCOPIA DE ABSORCION Y REFLECTIVIDAD von Ramírez, Y.P. Fernández, Hoyos, W, Rudamas, C

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Vertical stacks of small InAs/GaAs self-assembled dots: resonant and non-resonant excitation von Martı́nez-Pastor, J, Alén, B, Rudamas, C, Roussignol, Ph, Garcı́a, J.M, González, L

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Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures von Rudamas, C., Martı́nez-Pastor, J., González, L., Vinattieri, A., Colocci, M.

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Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots von Rudamas, C., Martı́nez-Pastor, J., Garcı́a-Cristóbal, A., Roussignol, Ph, Garcı́a, J.M., González, L.

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Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells von Rudamas, C., Martı&#x0301, nez-Pastor, J., González, L., Vinattieri, A., Colocci, M.

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Exciton kinetics and luminescence in disordered InxGa1−xP/GaAs quantum wells von Rudamas, C., Martínez-Pastor, J., González, L., Vinattieri, A., Colocci, M.

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Carrier Recombination in InAs/GaAs Self-Assembled Quantum Dots under Resonant Excitation Conditions von Rudamas, C., Martínez-Pastor, J., García-Cristóbal, A., Roussignol, Ph, García, J.M., González, L.

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Band Alignments in InxGa1-xP/GaAs Heterostructures Investigated by Pressure Experiments von Martínez-Pastor, J., Camacho, J., Rudamas, C., Cantarero, A., González, L., Syassen, K.

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Structural, vibrational, and electronic behavior of two GaGeTe polytypes under compression von Bandiello, Enrico, Gallego-Parra, Samuel, Liang, A, Sans-Tresserras, Juan Ángel, Cuenca-Gotor, Vanesa Paula, Lora da Silva, E, Vilaplana Cerda, Rosario Isabel, Rodríguez-Hernández, P, Muñoz, A, Diaz-Anichtchenko, D, Popescu, C, Alabarse, F.G, Rudamas, C, Drasar, C, Segura, A, Manjón, Francisco-Javier

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Exciton kinetics and luminescence in disordered In x Ga 1− x P/GaAs quantum wells von Rudamas, C., Martínez‐Pastor, J., González, L., Vinattieri, A., Colocci, M.

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Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots von RUDAMAS, C, MARTINEZ-PASTOR, J, GARCIA-CRISTOBAL, A, ROUSSIGNOL, Ph, GARCIA, J. M, GONZALEZ, L

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Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures von RUDAMAS, C, MARTINEZ-PASTOR, J, GONZALEZ, L, VINATTIERI, A, COLOCCI, M

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Band Alignments in InxGa1xP/GaAs Heterostructures Investigated by Pressure Experiments von Martínez-Pastor, J., Camacho, J., Rudamas, C., Cantarero, A., González, L., Syassen, K.

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