Implicit and explicit discrete-time realizations of the robust exact filtering differentiator von Carvajal-Rubio, J.E., Defoort, M., Sánchez-Torres, J.D., Djemai, M., Loukianov, A.G.

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Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures von Castrillo, P., Jaraiz, M., Pinacho, R., Rubio, J.E.

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Global Solution of Optimal Shape Design Problems von Fakharzadeh, A, Rubio, J.E

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The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy von Castrillo, P., Pinacho, R., Jaraiz, M., Rubio, J.E., Singer, J.

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Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population von Mok, K. R. C., Jaraiz, M., Martin-Bragado, I., Rubio, J. E., Castrillo, P., Pinacho, R., Barbolla, J., Srinivasan, M. P.

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On the Discretization of Robust Exact Filtering Differentiators von Carvajal-Rubio, J.E., Sánchez-Torres, J.D., Defoort, M., Loukianov, A.G.

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Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation von Rubio, J.E., Jaraiz, M., Martin-Bragado, I., Pinacho, R., Castrillo, P., Barbolla, J.

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Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations von Rubio, J.E., Jaraiz, M., Martin-Bragado, I., Castrillo, P., Pinacho, R., Barbolla, J.

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Comprehensive, physically based modelling of As in Si von Pinacho, R., Jaraiz, M., Castrillo, P., Rubio, J.E., Martin-Bragado, I., Barbolla, J.

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Physically based modeling of dislocation loops in ion implantation processing in silicon von Castrillo, P., Martin-Bragado, I., Pinacho, R., Jaraiz, M., Rubio, J.E., Mok, K.R.C., Miguel-Herrero, F.J., Barbolla, J.

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Physical modeling of Fermi-level effects for decanano device process simulations von Martin-Bragado, I., Pinacho, R., Castrillo, P., Jaraiz, M., Rubio, J.E., Barbolla, J.

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Comprehensive modeling of ion-implant amorphization in silicon von Mok, K.R.C., Jaraiz, M., Martin-Bragado, I., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P., Benistant, F.

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Dose loss and segregation of boron and arsenic at the Si/SiO 2 interface by atomistic kinetic Monte Carlo simulations von Rubio, J.E., Jaraiz, M., Martin-Bragado, I., Castrillo, P., Pinacho, R., Barbolla, J.

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A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations von Martin-Bragado, I., Jaraiz, M., Castrillo, P., Pinacho, R., Rubio, J.E., Barbolla, J.

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Bimodal distribution of damage morphology generated by ion implantation von Mok, K.R.C., Jaraiz, M., Martin-Bragado, I., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P., Benistant, F.

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Ion-implant simulations: The effect of defect spatial correlation on damage accumulation von Mok, K.R.C., Jaraiz, M., Martin-Bragado, I., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P., Benistant, F.

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Optimal control problems with unbounded constraint sets von Rubio, J.E

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The optimal control of nonlinear diffusion equations with rough initial data von Rubio, J.E.

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Partial differential equations of evolution von Rubio, J.E

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Particles and paradoxes: The limits of quantum logic von Rubio, J.E

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