An ultra-compact leaky-integrate-and-fire model for building spiking neural networks von Rozenberg, M. J., Schneegans, O., Stoliar, P.

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Bad-Metal Behavior Reveals Mott Quantum Criticality in Doped Hubbard Models von Vučičević, J, Tanasković, D, Rozenberg, M J, Dobrosavljević, V

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Two-dimensional electron gas with universal subbands at the surface of SrTiO3 von Santander-Syro, A. F., Copie, O., Kondo, T., Fortuna, F., Pailhès, S., Weht, R., Qiu, X. G., Bertran, F., Nicolaou, A., Taleb-Ibrahimi, A., Le Fèvre, P., Herranz, G., Bibes, M., Reyren, N., Apertet, Y., Lecoeur, P., Barthélémy, A., Rozenberg, M. J.

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A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3 von Lee, Hong Sub, Choi, Sun Gyu, Park, Hyung-Ho, Rozenberg, M. J.

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Nonvolatile memory with multilevel switching: a basic model von Rozenberg, M J, Inoue, I H, Sánchez, M J

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Multiple crossovers and coherent states in a Mott-Peierls insulator von Nájera, O., Civelli, M., Dobrosavljević, V., Rozenberg, M. J.

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Mechanism of electric-pulse-induced resistance switching in manganites von Quintero, M, Levy, P, Leyva, A G, Rozenberg, M J

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Manganite-based memristive heterojunction with tunable non-linear I-V characteristics von Lee, Hong-Sub, Park, Hyung-Ho, Rozenberg, M J

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Non-volatile resistive switching in the dielectric superconductor YBa2Cu3O7−δ von Acha, C, Rozenberg, M J

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Strong electron correlation effects in nonvolatile electronic memory devices von Rozenberg, M. J., Inoue, I. H., Sánchez, M. J.

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Quantum interference effects of out-of-plane confinement on two-dimensional electron systems in oxides von Santander-Syro, A. F., Dai, J., Rodel, T. C., Frantzeskakis, E., Fortuna, F., Weht, R., Rozenberg, M. J.

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Compressibility divergence and the finite temperature Mott transition von Kotliar, G, Murthy, Sahana, Rozenberg, M J

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Enhanced and continuous electrostatic carrier doping on the SrTiO3 surface von Eyvazov, A. B., Inoue, I. H., Stoliar, P., Rozenberg, M. J., Panagopoulos, C.

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Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit von Stoliar, P., Levy, P., Sanchez, M. J., Leyva, A. G., Albornoz, C. A., Gomez-Marlasca, F., Zanini, A., Toro Salazar, C., Ghenzi, N., Rozenberg, M. J.

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Resolving the VO2 controversy: Mott mechanism dominates the insulator-to-metal transition von Nájera, O, Civelli, M, Dobrosavljević, V, Rozenberg, M J

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Engineering two-dimensional electron gases at the (001) and (101) surfaces of TiO2 anatase using light von Roedel T., C., Fortuna, F., Bertran, F., Gabay, M., Rozenberg M., J., Santander-Syro A., F., Le Fevre, P.

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First-order insulator-to-metal Mott transition in the paramagnetic 3D system GaTa4Se8 von Camjayi, A, Acha, C, Weht, R, Rodríguez, M G, Corraze, B, Janod, E, Cario, L, Rozenberg, M J

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Landau theory of the finite temperature mott transition von Kotliar, G, Lange, E, Rozenberg, MJ

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Impurity scattering in a strongly correlated host von Lederer, P, Rozenberg, M. J

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Electronic structure of Ca1 − xSrxVO3: A tale of two energy scales von Maiti, K, Sarma, D. D, Rozenberg, M. J, Inoue, I. H, Makino, H, Goto, O, Pedio, M, Cimino, R

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