Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si von Roy Chaudhuri, Rajarshi, Joshi, Vipin, Malik, Rasik Rashid, Shrivastava, Mayank

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Part I: Physical Insights Into Dynamic R-ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs von Gupta, Sayak Dutta, Joshi, Vipin, Chaudhuri, Rajarshi Roy, Shrivastava, Mayank

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On the Channel Hot-Electron's Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs von Chaudhuri, Rajarshi Roy, Joshi, Vipin, Gupta, Sayak Dutta, Shrivastava, Mayank

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Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance von Joshi, Vipin, Chaudhuri, Rajarshi Roy, Gupta, Sayak Dutta, Shrivastava, Mayank

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Modeling and Estimation of Friction, Extension, and Coupling Effects in Multisegment Continuum Robots von Roy, Rajarshi, Long Wang, Simaan, Nabil

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Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si von Joshi, Vipin, Roy Chaudhuri, Rajarshi, Dutta Gupta, Sayak, Shrivastava, Mayank

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Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs-Part II von Joshi, Vipin, Gupta, Sayak Dutta, Chaudhuri, Rajarshi Roy, Shrivastava, Mayank

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Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer von Roy Chaudhuri, Rajarshi, Joshi, Vipin, Dutta Gupta, Sayak, Shrivastava, Mayank

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Neuronal Avalanches Imply Maximum Dynamic Range in Cortical Networks at Criticality von Shew, Woodrow L, Yang, Hongdian, Petermann, Thomas, Roy, Rajarshi, Plenz, Dietmar

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Topological Control of Synchronization Patterns: Trading Symmetry for Stability von Hart, Joseph D, Zhang, Yuanzhao, Roy, Rajarshi, Motter, Adilson E

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Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer von Ateeb Munshi, Mohammad, Ashraf Mir, Mehak, Joshi, Vipin, Roy Chaudhuri, Rajarshi, Malik, Rasik, Shrivastava, Mayank

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Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs-Part I von Joshi, Vipin, Dutta Gupta, Sayak, Roy Chaudhuri, Rajarshi, Shrivastava, Mayank

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Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs-Part II von Gupta, Sayak Dutta, Joshi, Vipin, Chaudhuri, Rajarshi Roy, Shrivastava, Mayank

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Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State von Dutta Gupta, Sayak, Joshi, Vipin, Chaudhuri, Rajarshi Roy, Shrivastava, Mayank

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Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs von Joshi, Vipin, Gupta, Sayak Dutta, Chaudhuri, Rajarshi Roy, Shrivastava, Mayank

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Pure Tin Halide Perovskite Solar Cells: Focusing on Preparation and Strategies von Liu, Hairui, Zhang, Zuhong, Zuo, Weiwei, Roy, Rajarshi, Li, Meng, Byranvand, Mahdi Malekshahi, Saliba, Michael

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Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG von Dutta Gupta, Sayak, Joshi, Vipin, Chaudhuri, Rajarshi Roy, Shrivastava, Mayank

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Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs von Mir, Mehak Ashraf, Joshi, Vipin, Chaudhuri, Rajarshi Roy, Munshi, Mohammad Ateeb, Malik, Rasik Rashid, Shrivastava, Mayank

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Packet-level and IEEE 802.11 MAC frame-level network traffic traces data of the D-Link IoT devices von Roy Chowdhury, Rajarshi, Aneja, Sandhya, Aneja, Nagender, Abas, Pg Emeroylariffion

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Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes von Malik, Rasik Rashid, Joshi, Vipin, Chaudhuri, Rajarshi Roy, Gupta, Sayak Dutta, Shrivastava, Mayank

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