Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron hologr... von Béché, A., Rouvière, J.L., Barnes, J.P., Cooper, D.

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Proposition of a model elucidating the AlN-on-Si (111) microstructure von Mante, N., Rennesson, S., Frayssinet, E., Largeau, L., Semond, F., Rouvière, J. L., Feuillet, G., Vennéguès, P.

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Theoretical discussions on the geometrical phase analysis von Rouvière, J.L., Sarigiannidou, E.

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Improved precision in strain measurement using nanobeam electron diffraction von Béché, A., Rouvière, J. L., Clément, L., Hartmann, J. M.

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Confirmation of the Domino-Cascade Model by LiFePO4/FePO4 Precession Electron Diffraction von Brunetti, G, Robert, D, Bayle-Guillemaud, P, Rouvière, J. L, Rauch, E. F, Martin, J. F, Colin, J. F, Bertin, F, Cayron, C

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Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate von Roque, J., Haas, B., David, S., Rochat, N., Bernier, N., Rouvière, J. L., Salem, B., Gergaud, P., Moeyaert, J., Martin, M., Bertin, F., Baron, T.

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Dark field electron holography for strain measurement von Béché, A., Rouvière, J.L., Barnes, J.P., Cooper, D.

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Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model von Pelloux-Prayer, J., Cassé, M., Triozon, F., Barraud, S., Niquet, Y.-M., Rouvière, J.-L., Faynot, O., Reimbold, G.

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Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations von Clément, L., Pantel, R., Kwakman, L. F. Tz, Rouvière, J. L.

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Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers von Houdellier, F., Roucau, C., Clément, L., Rouvière, J.L., Casanove, M.J.

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Measuring strain on HR-STEM images: application to threading dislocations in Al0.8In0.2N von Rouvière, J L, Mouti, A, Stadelmann, P

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Visualization of Tm dopant atoms diffused out of GaN quantum dots von Okuno, H., Rouvière, J.-L., Jouneau, P.-H., Bayle-Guillemaud, P., Daudin, B.

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Microstructural void environment characterization by electron imaging in 45 nm technology node to link electromigration and copper microstructure von GALAND, R, BRUNETTI, G, ARNAUD, L, ROUVIERE, J.-L, CLEMENT, L, WALTZ, P, WOUTERS, Y

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Improved measurement of electric fields by nanobeam precession electron diffraction von Bruas, L., Boureau, V., Conlan, A. P., Martinie, S., Rouviere, J.-L., Cooper, D.

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Improved accuracy in nano beam electron diffraction von Béché, A, Clément, L, Rouvière, J-L

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Growth and structural properties of step-graded, high Sn content GeSn layers on Ge von Aubin, J, Hartmann, J M, Gassenq, A, Rouviere, J L, Robin, E, Delaye, V, Cooper, D, Mollard, N, Reboud, V, Calvo, V

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The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography von Denneulin, T, Rouvière, J L, Béché, A, Py, M, Barnes, J P, Rochat, N, Hartmann, J M, Cooper, D

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Strain distribution in GaN∕AlN quantum-dot superlattices von Sarigiannidou, E., Monroy, E., Daudin, B., Rouvière, J. L., Andreev, A. D.

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Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation von Korytov, M., Budagosky, J. A., Brault, J., Huault, T., Benaissa, M., Neisius, T., Rouvière, J.-L., Vennéguès, P.

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Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements von BONEF, B., HAAS, B., ROUVIÈRE, J‐L., ANDRÉ, R., BOUGEROL, C., GRENIER, A., JOUNEAU, P‐H., ZUO, J‐M.

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